NJW4140Z データシート

NJW4140-Z
MOSFET
NJW4140
IC
3V 40V
IC
Nch MOSFET
NJW4140R-Z
Nch MOSFET
5.3V (typ.)
3V to 40V
-40C to +125C
PWM
40kHz to 1MHz
AEC-Q100
NJW4140R-Z : VSP8
AEC-Q100
NJW4140R
NJW4140M
NJW4140R-T1
NJW4140R-Z
NJW4140R-Z
Ver.2015-06-16
VSP8
DMP8
VSP8
VSP8
-40C to +85C
T1
Z
-40C to +125C
-40C to +125C
-1-
NJW4140-Z
1
8
2
7
3
6
4
5
1. V+
2. EN
3. IN4. FB
5. CT
6. GND
7. SI
8. OUT
NJW4140R-Z
V
Enable
Control
EN
High: ON
Low : OFF
(Standby)
ON/OFF
5V
Reg.
500k
Soft
Start
Vref
Low Frequency
Control
Driver
0.8V
Pulse by
Pulse
IN-
PWM
Comparator
FB
OUT
OSC
Error AMP
-2-
+
CT
SI
VIPK
GND
Ver.2015-06-16
NJW4140-Z
(Ta=25C)
OUT
SI
EN
INCT
OUT
(*1):
(*2):
V+
VOUT
VSI
VEN
VINVCT
+45
-0.3 to +6 (*1)
-0.3 to +6
+45
+6
+6 (*1)
200 (Source)
700 (Sink)
595 (*2)
-40 to +125
-40 to +150
IO_PEAK+
IO_PEAKPD
Topr
Tstg
6V
76.2 114.3 1.6mm(2
FR-4)
V
V
V
V
V
V
mA
mW
C
C
EIA/JEDEC
Ta= -40C to +125C
V+
CT
fOSC
Ver.2015-06-16
3
120
40
40
3,900
1,000
V
pF
kHz
-3-
NJW4140-Z
V+=VEN=12V, CT=470pF, Ta=25ºC)
(
fOSC1
fOSC2
fOSC3
Ichg
Idis
CT=470pF
270
300
330
CT=470pF, Ta= -40ºC to +125ºC
260
–
330
CT=680pF
CT=680pF , Ta= -40ºC to +125ºC
CT=1500pF
CT=1500pF , Ta= -40ºC to +125ºC
180
170
92
85
150
210
–
100
–
200
240
240
110
110
250
Ta= -40ºC to +125ºC
140
–
260
150
200
250
140
–
260
–
0.7
–
V
%
Ta= -40ºC to +125ºC
VOSC
(
)
+
kHz
kHz
kHz
A
A
fDV
V =3 to 40V
VIN-=0.3V, VFB=0.7V, CT=470pF
–
90
1
105
–
120
fOSC_LOW
VIN-=0.3V, VFB=0.7V, CT=470pF,
Ta= -40ºC to +125ºC
70
–
130
VB=0.75V
VB=0.75V, Ta= -40ºC to +125ºC
2
2
4
–
8
8
-1.0%
0.8
+1.0%
-2.0%
–
+2.0%
-0.1
–
0.1
-0.1
–
0.1
AV
–
80
–
dB
GB
–
3
–
MHz
VFB=1V, VIN-=0.7V
50
100
150
VFB=1V, VIN-=0.7V, Ta= -40ºC to +125ºC
50
–
150
VFB=1V, VIN-=0.9V
2
4
6
VFB=1V, VIN-=0.9V, Ta= -40ºC to +125ºC
2
–
8
0.32
0.32
0.63
0.63
85
0.40
–
0.70
–
90
0.54
0.54
0.77
0.77
95
85
–
95
TSS
VB
IB
IOM+
IOM-
Ta= -40ºC to +125ºC
Ta= -40ºC to +125ºC
kHz
ms
V
A
A
mA
PWM
VT_0
F.B
VT_50
MAXDUTY
-4-
Duty=0%, VIN-=0.6V
Duty=0%, VIN-=0.6V, Ta= -40ºC to +125ºC
Duty=50%, VIN-=0.6V
Duty=50%, VIN-=0.6V, Ta= -40ºC to +125ºC
VFB=1.2V
VFB=1.2V, Ta= -40ºC to +125ºC
V
V
%
Ver.2015-06-16
NJW4140-Z
V+=VEN=12V, CT=470pF, Ta=25ºC)
(
VIPK
TDELAY
H
ON
ROH
L
ON
ROL
IOH
OUT
VOLIM
ON
VT_ON
OFF
VT_OFF
ON
VON
OFF
VOFF
RPD
IDD
IDD_STB
Ver.2015-06-16
120
140
160
120
–
–
90
160
–
IO= -50mA
–
3.0
4.5
IO= +50mA
–
2.5
3.5
IO= +50mA, Ta= -40ºC to +125ºC
–
–
4.5
Ta= -40ºC to +125ºC
VSI=300mV
OUT
=4.5V
45
65
85
OUT
=4.5V, Ta= -40ºC to +125ºC
40
–
90
5.00
5.30
5.55
5.00
–
5.65
Ta= -40ºC to +125ºC
mV
ns


mA
V
+
H
2.65
2.80
2.95
+
H, Ta= -40ºC to +125ºC
2.65
–
2.95
+
L
2.40
2.55
2.70
V =H
+
L, Ta= -40ºC to +125ºC
2.35
–
2.80
VEN= L
H
1.7
–
V
VEN= L
H, Ta= -40ºC to +125ºC
1.7
–
V
VEN= H
L
0
–
0.9
VEN= H
L, Ta= -40ºC to +125ºC
0
–
0.9
350
500
650
k
350
–
650
k
V =L
V =L
V =H
Ta= -40ºC to +125ºC
V
V
+
V
+
RL=
, VIN-= VFB= 0.7V
–
1.4
1.7
RL=
, VIN-= VFB= 0.7V, Ta= -40ºC to +125ºC
–
–
2.0
VEN=0V
–
2.5
6.0
VEN=0V, Ta= -40ºC to +125ºC
–
–
12.0
V
mA
A
-5-
NJW4140-Z
CNF
RNF
EN
High: ON
Low: OFF(Standby)
V IN
CIN1
CIN2
L
SBD
4
3
2
1
FB
IN-
EN
V+
COUT
CFB
R2
Pow er
MOSFET
NJW4140
CT
GND
SI
OUT
5
6
7
8
V OUT
RFB
RSENSE
R1
CT
Filter
CNF
RNF
EN
High: ON
Low: OFF(Standby)
SBD
T
COUT
V OUT
V IN
CIN1
CFB
CIN2
R2
RFB
4
3
2
1
FB
IN-
EN
V+
R1
Pow er
MOSFET
NJW4140
CT
GND
SI
OUT
5
6
7
8
RSENSE
CT
Filter
-6-
Ver.2015-06-16
NJW4140-Z
Oscillation frequency vs. Timing Capacitor
+
(V =12V, Ta=25°C)
100
Maximum Duty Cycle MAXDUTY (%)
Oscillation frequency fOSC (kHz)
1000
100
10
100
90
80
70
60
50
40
30
20
10
0
10
1000
10000
Timing Capacitor CT (pF)
Oscillation Frequency vs. Supply Voltage
(CT=470pF, Ta=25°C)
100
Oscillator Frequency fOSC (kHz)
1000
Reference Voltage vs. Supply Voltage
(Ta=25°C)
0.810
320
315
Reference Voltage VB (V)
310
305
300
295
290
0.805
0.800
0.795
285
280
0.790
0
10
20
30
Supply Voltage V+ (V)
40
0
40
Error Amplifier Block
Voltage Gain, Phase vs. Frequency
+
(V =12V, Gain=40dB, Ta=25°C)
Quiescent Current vs. Supply Voltage
(RL=no load, VIN-=VFB=0.7V, Ta=25°C)
2
60
1.8
180
Phase
1.6
Voltage Gain Av (dB)
Quiescent Current IDD (mA)
10
20
30
Supply Voltage V+ (V)
1.4
1.2
1
0.8
0.6
0.4
45
135
Gain
30
90
15
45
0.2
0
0
Ver.2015-06-16
10
20
30
Supply Voltage V+ (V)
40
0
100
1k
10k
100k
Frequency f (kHz)
1M
0
10M
-7-
Phase Φ (deg)
Oscillation Frequnecny fOSC (kHz)
Maximum Duty Cycle vs. Oscillator Frequency
+
(V =12V, VFB=1.2V, Ta=25°C)
NJW4140-Z
Oscillation Frequency vs Temperature
+
(V =12V, CT=470pF)
320
0.810
Reference Voltage VB (V)
Oscillator Frequency fOSC (kHz)
330
Reference Voltage vs. Temperature
+
(V =12V)
310
300
290
280
270
-50
0.805
0.800
0.795
0.790
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
-50
Current Limit Detection Votage vs.Temperature
+
(V =12V)
OUT pin Limiting Voltage vs.Temperature
+
(V =12V)
12
Current Limit Detection Voltage
VIPK (mV)
OUT pin Limiting Voltage VOLIM (V)
170
160
150
140
130
120
10
110
6
4
2
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
-50
Output High Level ON Resistance vs.Temperature
(IO=-50mA)
7
6
5
+
V =3V
4
3
+
V =12V
V+=40V
2
1
0
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
Output Low Level ON Resistance vs.Temperature
(IO=+50mA)
5
Output Low Level ON Resistance
ROL ()
Output High Level ON Resistance
ROH ()
8
0
-50
4
+
V =3V
3
2
V+=12V
+
V =40V
1
0
-50
-8-
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
-50
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
Ver.2015-06-16
NJW4140-Z
Enable Control ON/OFF Voltage vs.Temperature
+
(V =12V)
2
Under Voltage Lockout Voltage vs. Temperature
3.00
ON/OFF Voltage VON/OFF (V)
1.8
Threshold Voltage (V)
2.90
VT_ON
2.80
2.70
2.60
VT_OFF
2.50
VON
1.6
1.4
1.2
VOFF
1
0.8
0.6
0.4
0.2
2.40
0
-50
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
-50
Quiescent Current vs. Temperature
(RL=no load, VIN-=VFB=0.7V)
Standby Current vs. Temperature
(VEN=0V)
2
6
Standby Current IDD_STB (μA)
1.8
Quiescent Current IDD (mA)
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
+
V =40V
1.6
1.4
V+=12V
1.2
1
+
V =3V
0.8
0.6
0.4
5
4
3
+
V =40V
2
V+=3V
1
V+=12V
0.2
0
0
-50
-50
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
NJW4140R (VSP8 Package)
Power Dissipation vs. Ambient Temperature
(Tj=~150°C)
1000
Power Dissipation P D (mW)
-25
0
25
50
75 100 125 150
Ambient Temperature Ta (°C)
At on 4 layer PC Board
At on 2 layer PC Board
800
600
400
Z
200
0
-50
Ver.2015-06-16
-25
0
25
50
75
100
Ambient Temperature Ta (°C)
125
150
-9-
NJW4140
Application Manual
NJW4140-Z
1
V+
2
EN
3
IN-
4
FB
5
CT
6
GND
7
SI
NJW4140
500k
High
Low
IN-
0.8V typ.
FB
IN40k 1MHz
SI
-GND
140mV typ.
MOSFET
8
- 10 -
OUT
OUT
5.3V typ.
Nch MOSFET
High
Ver.2015-06-16
NJW4140 Application
Manual
NJW4140-Z
(ERAMP)
0.8V 1%
(IN-
)
0.8V
0.8V
)
(OSC)
-GND
Oscillation frequency vs. Timing Capacitor
40kHz 1MHz
0.4V 1.0V
(@ CT=470pF
CT
)
IN-
0.4V
33%
FB
1000
100
10
100
PWM
IN-
Oscillation frequency vs. Timing Capacitor
+
(V =12V, Ta=25°C)
Oscillation frequency fOSC (kHz)
(FB
1000
Timing Capacitor CT (pF)
10000
(PWM)
PWM
0 90%
Max Duty setting
FB pin Voltage
OSC
Waveform
(IC internal)
Maximum duty: 90%
V+
High
OUT pin
Low
PWM
Ver.2015-06-16
OUT
- 11 -
NJW4140
Application Manual
NJW4140-Z
Driver
OUT
OUT
Nch MOSFET
High
Nch MOSFET
OUT pin
5.3V typ.
V+
V+
5.3V
5V
Regulator
GND
OUT
PWM
Comparator
ch MOSFET
OFF
Driver
ON
OFF
ON
Nch MOSFET OFF
Low
V GS
OUT
NJW4140
OUT
5V
OUT
MOSFET
MOSFET
OUT pin Voltage vs. Supply Voltage
(IO_SINK=0mA, Ta=25°C)
OUT pin Voltage VOUT (V)
6
5
4
3
2
1
0
3
4
5
6
7
Supply Voltage V+ (V)
8
OUT
- 12 -
Ver.2015-06-16
NJW4140 Application
Manual
NJW4140-Z
(V+, GND)
GND
MOSFET
IC
V+
IC
GND
(UVLO)
UVLO
2.8V typ.
250mV typ.
EN
Enable Control
0.9V max.
500k
IC
UVLO
NJW4140
V+
ON/OFF
4ms typ.
UVLO
UVLO
0 0.75V
IN33%
0.4V
0.8V
Vref,
IN- pin Voltage
Max Duty setting
FB pin Voltage
OSC Waveform
V+
High
OUT pin
Low
UVLO(2.8V typ.)
Soft Start
Soft Start
Ver.2015-06-16
- 13 -
NJW4140
Application Manual
NJW4140-Z
SI
SI
GND
GND
140mV typ.
RSENSE
Low
IN-
0.4V
33%
Max Duty setting
FB pin Voltage
OSC
Waveform
V+
High
OUT pin
Low
Sw itching
Current
ILIM
0
MOSFET
RSENSE SI
(T R  C)
T
RC
OUT
SI
Pulse by
Pulse
T
- 14 -
R
C
V IPK
RSENSE
Ver.2015-06-16
NJW4140 Application
Manual
NJW4140-Z
Ipk
L
IL
L
0
tON
tOFF
f OSC
L
MOSFET
OFF
SBD (Schottky Barrier Diode)
MOSFET
SBD
ON
OFF
ON
SBD
NJW4140
OUT
5.3V typ.
Nch MOSFET
MOSFET
5V
ON
NJW4140
MOSFET
OUT
/
OUT
Ver.2015-06-16
- 15 -
NJW4140
Application Manual
NJW4140-Z
NJW4140
MOSFET
ESR(
Equivalent Series Resistance)
ESR
ESR
- 16 -
ESR
Ver.2015-06-16
NJW4140 Application
Manual
NJW4140-Z
L
V IN
SBD
L
COUT
CIN
V IN
SW
COUT
CIN
NJW4140
SBD
SW
NJW4140
(a)
SW ON
(b)
SW OFF
GND
L
V IN
SBD
CIN
V OUT
COUT
RL
SW
OUT
V+
RFB
CFB
NJW4140
INCT
CT
R2
GND
GND
R1
IC
R1,R2
IC
Ver.2015-06-16
- 17 -
NJW4140
Application Manual
NJW4140-Z
VIN
VOUT
L
SBD
CIN1
COUT1
COUT2
FET
RSENSE
GND IN
GNDOUT
Power GND Area
CS1 RS1
RG
EN
CIN2
IC
Feed back signal
CT
REN
Signal GND Area
- 18 -
CNF RNF R1 R2 RFB CFB
Ver.2015-06-16
NJW4140 Application
Manual
NJW4140-Z
IC
V+
IDD
fosc
ton
Qg
IC
IC
ON
MOS FET
IC
PD
PD = (V+  IDD) + (V+  Qg  fosc) [W]
PD
NJW4140R (VSP8 Package)
Power Dissipation vs. Ambient Temperature
(Tj=~150°C)
Power Dissipation P D (mW)
1000
At on 4 layer PC Board
At on 2 layer PC Board
800
600
400
Z
200
0
-50
76.2 114.3 1.6mm(2
76.2 114.3 1.6mm(4
Ver.2015-06-16
-25
FR-4)
FR-4)
0
25
50
75
100
Ambient Temperature Ta (°C)
EIA/JEDEC
EIA/JEDEC
125
(
150
74.2 74.2mm)
- 19 -
NJW4140
Application Manual
NJW4140-Z
IC
NJW4140R
VIN=9V 15V
VOUT=20V
IOUT=1.5A (@VIN=12V)
fosc=300kHz
CNF
RNF
10,000pF 13k
EN
High: ON
Low: OFF(Standby)
VIN=12V
CIN1
220F/35V
CIN2
0.1F/50V
4
3
2
1
FB
IN-
EN
V+
NJW4140
L1
22H/4.7A
SBD
GND
SI
OUT
5
6
7
8
VOUT=20V
CFB
820pF
RG
0
Q1
CT
COUT1
COUT2
100F/35V, 0.1F/50V
x2pcs.
RFB
20k
RSENSE
39m
R2
82k
R1
3.3k
CT
470pF
CS1
390pF
RS1
330
IC
1
NJW4140R
Q1
L1
SBD
CIN1
CIN2
COUT1
COUT2
CT
CNF
CFB
CS1
R1
R2
RNF
RFB
RSENSE
RG
RS1
1
1
1
1
1
2
1
1
1
1
1
1
1
1
1
1
1
1
TPCA8052-H
CDRH127LDNP-220
DE5SC4M
EEEFP1V221AP
0.1F
EEEFP1V101AP
0.1F
470pF
10,000pF
820pF
390pF
3.3k
82k
13k
20k
UR73D3ATTE39L0F
0 (Short)
330
- 20 -
MOSFET
SW.REG. IC
Nch MOSFET 40V, 20A
Inductor 22H, 4.7A
Schottky Diode 40V, 5A
Aluminum Electrolytic Capacitor 220F, 35V
Ceramic Capacitor 1608 0.1F, 50V, B
Aluminum Electrolytic Capacitor 100F, 35V
Ceramic Capacitor 1608 0.1F, 50V, B
Ceramic Capacitor 1608 470pF, 50V, CH
Ceramic Capacitor 1608 10,000pF, 50V, B
Ceramic Capacitor 1608 820pF, 50V, B
Ceramic Capacitor 1608 390pF, 50V, CH
Resistor 1608 3.3k, 1%, 0.1W
Resistor 1608 82k, 1%, 0.1W
Resistor 1608 13k, 1%, 0.1W
Resistor 1608 20k, 1%, 0.1W
Resistor 2512 39m, ±1%, 1W
Resistor 1608 0, 0.1W
Resistor 1608 330, 1%, 0.1W
New JRC
Toshiba
Sumida
Shindengen
Panasonic
Std.
Panasonic
Std.
Std.
Std.
Std.
Std.
Std.
Std.
Std.
Std.
KOA
Std.
Std.
Ver.2015-06-16
NJW4140 Application
Manual
NJW4140-Z
Oscillation frequency vs. Timing Capacitor

V
Duty  1  IN
VOUT

fosc=300kHz
CT=470 [pF], t=3.33[s]

 12 
  100  1 
  100  40 %
 20 

tON=1.33 [s], tOFF=2.0 [s]
=93%
IIN
IIN 
VOUT  IOUT
20  1.5

 2.69 A 
  VIN
0.93  12
27%
IL
IL = 0.27  IIN = 0.27 2.69 = 0.73 [A]
L
L
Ipk
12
VIN
 1.33  22 [H]
 t ON 
0
.73
IL
IL
L
IIN
0
tON
Ipk
Ipk  IIN 
IL
0.73
 2.69 
 3.06[ A ]
2
2
tOFF
t
fOSC=1/t
22H/ 4.5A
Ipk
Ipk=3.5A
ILIMIT
ILIMIT = VIPK / RSC = 140mV / 39m =3.59 [A]
SI
OUT
ILIMIT _ DELAY  ILIMIT 
Ver.2015-06-16
VIN
12
 TDELAY  3.59 
 90n  3.64 [ A ]
L
22
- 21 -
NJW4140
Application Manual
NJW4140-Z
(IRMS_CIN)
IRMS _ CIN 
I L
2 3

0.73
2 3
 0.21 [ Arms]
ESR
Vripple
I 
0.73 


Vripple  ESR   IL  L   40m   2.69 
  122 [mV ]
2 
2 


IL=IIN ESR=40m
(IRMS_COUT)
IRMS _ COUT  I OUT 
VOUT  VIN
20  12
 1 .5 
 1.22 [ Arms ]
VIN
12
COUT=100F/35V
VOUT
R1,R2
R1,R2
Error AMP
 R2

 82k

VOUT  
 1  VB  
 1  0.8  20.7 [ V ]
R
1
3
.
3
k




NJW4140
FB
DC
DC
AC
AC
RNF=13k
CNF=10,000pF
AC
- 22 -
Ver.2015-06-16
NJW4140 Application
Manual
NJW4140-Z
Efficiency vs. Output Current
(VOUT=20V, Ta=25ºC)
100
f=300kHz
L=22H
90
Efficiency η (%)
80
V+=9V, 12V, 15V
70
60
50
40
30
20
10
0
1
10
100
1000
Output Current IOUT (mA)
10000
Output Voltage vs Output Current
(Ta=25ºC)
Output Voltage VOUT (V)
21.0
f=300kHz
L=22H
20.9
V+=9V, 12V, 15V
20.8
20.7
20.6
20.5
20.4
1
Ver.2015-06-16
10
100
1000
Output Current IOUT (mA)
10000
- 23 -
NJW4140-Z
MEMO
- 24 -
Ver.2015-06-16