Preliminary Datasheet RJH1BF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0394EJ0100 Rev.1.00 May 16, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C) • Gate to emitter voltage rating ±30 V • Pb-free lead plating Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Symbol VCES VGES IC IC ic(peak) Note1 Ratings 1100 ±30 60 35 100 Unit V V A A A Collector to emitter diode forward current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature iDF PC θj-c Tj Tstg 25 250 0.5 150 –55 to +150 A W °C/W °C °C Notes: 1. Pulse width limited by safe operating area. R07DS0394EJ0100 Rev.1.00 May 16, 2011 Page 1 of 6 RJH1BF7RDPQ-80 Preliminary Electrical Characteristics (Tj = 25°C) Symbol Min Typ Max Unit Zero gate voltage collector current Item ICES ⎯ ⎯ 100 μA VCE = 1100 V, VGE = 0 Gate to emitter leak current IGES ⎯ ⎯ ±1 μA VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 3.5 5.0 7.0 V VCE = 10 V, IC = 1 mA Collector to emitter saturation voltage VCE(sat) ⎯ 1.6 2.1 V IC = 35 A, VGE = 15 V Note2 ⎯ 1.95 2.35 V IC = 60 A, VGE = 15 V VCE = 25 V VGE = 0 V f = 1 MHz Input capacitance Cies ⎯ 3260 ⎯ pF Output capacitance Coes ⎯ 67 ⎯ pF Reverse transfer capacitance Cres ⎯ 54 ⎯ pF Switching time td(on) ⎯ 58 ⎯ ns C-E diode forward voltage tr ⎯ 78 ⎯ ns td(off) ⎯ 144 ⎯ ns tf ⎯ 208 ⎯ ns VF ⎯ 3.0 3.9 V Test Conditions Note2 IC = 35 A VCE = 600 V, VGE = 15 V Rg = 5 Ω Note2 Resistive Load IF = 10 A Note2 Notes: 2. Pulse test R07DS0394EJ0100 Rev.1.00 May 16, 2011 Page 2 of 6 RJH1BF7RDPQ-80 Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 100 100 Collector Current IC (A) PW = 10 μs 10 1 0.1 0.01 1 Collector Current IC (A) 80 10 100 1000 8.4 V 8.2 V 9V 10 V 8V 60 15 V, 20 V 7.8 V 40 7.6 V 7.4 V 20 7.2 V VGE = 7 V 0 1 0 10000 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 60 VCE = 10 V Pulse Test 50 40 Tc = 75°C 30 25°C –25°C 20 10 0 2 4 6 8 10 12 3.6 Ta = 25°C Pulse Test 3.2 2.8 IC = 100 A 2.4 60 A 2.0 35 A 1.6 6 Gate to Emitter Voltage VGE (V) 4.0 3.5 VGE = 15 V Pulse Test IC = 100 A 3.0 60 A 2.5 35 A 2.0 1.5 1.0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0394EJ0100 Rev.1.00 May 16, 2011 8 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 8.6 V Ta = 25°C Pulse Test 8.8 V Tc = 25°C Single pulse Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Junction Temperature (Typical) 10 VCE = 10 V Pulse Test 8 IC = 10 mA 6 4 1 mA 2 0 -25 0 25 50 75 100 125 150 Junction Temperature Tj (°C) Page 3 of 6 RJH1BF7RDPQ-80 Preliminary Typical Capacitance vs. Colloctor to Emitter Voltage Forward Current vs.Forward Voltage (Typical) 10000 VGE = 0 V Ta = 25°C Pulse Test 25 Cies Capacitance C (pF) Forward Current IF (A) 30 20 15 10 100 Coes Cres 10 VGE = 0 V f = 1 MHz Ta = 25°C 5 0 1 0 2 4 0 8 6 50 100 150 200 250 300 C-E Diode Forward Voltage VECF (V) Colloctor to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) Switching Characteristics (Typical) (1) 16 VGE VCE 600 VCC = 600 V 300 V 12 400 8 200 4 VCC = 600 V 300 V 0 0 40 80 IC = 35 A Ta = 25°C 120 160 1000 tf Switching Time t (ns) 800 Gate to Emitter Voltage VGE (V) Colloctor to Emitter Voltage VCE (V) 1000 td(off) 100 td(on) 10 tr VCC = 600 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C, Resistive load 1 0 200 1 10 100 Gate Charge Qg (nC) Colloctor Current IC (A) Switching Characteristics (Typical) (2) Switching Characteristics (Typical) (3) 10000 1000 Switching Time t (ns) Switching Time t (ns) VCC = 600 V, VGE = 15 V IC = 35 A, Ta = 25°C, Resistive load 1000 td(off) tf 100 tr td(on) 10 tf td(off) tr 100 td(on) VCC = 600 V, VGE = 15 V IC = 35 A, Rg = 5 Ω, Resistive load 10 1 10 Gate Resistance Rg (Ω) R07DS0394EJ0100 Rev.1.00 May 16, 2011 100 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Page 4 of 6 RJH1BF7RDPQ-80 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C D=1 1 0.5 0.3 0.2 0.1 θj − c(t) = γs (t) • θj − c θj − c = 0.5 °C/W, Tc = 25 °C 0.1 0.05 0.02 PDM D= 1 shot pulse 0.03 PW T PW T 0.01 0.01 10 μ 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Ic Monitor 90% RL Vin Vin Monitor 10% 90% Rg D.U.T. Vin = 15 V VCC Ic 10% 10% td(on) tr ton R07DS0394EJ0100 Rev.1.00 May 16, 2011 90% td(off) tf toff Page 5 of 6 RJH1BF7RDPQ-80 Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PRSS0003ZE-A Previous Code ⎯ MASS[Typ.] 6.0g Unit: mm φ3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH1BF7RDPQ-80-T2 R07DS0394EJ0100 Rev.1.00 May 16, 2011 Quantity 450 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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