Preliminary Datasheet RJP60F4DPM 600 V - 30 A - IGBT High Speed Power Switching R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3. Emitter G E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Symbol VCES VGES IC Note1 IC Note1 ic(peak) Note1 PC j-c Ratings 600 30 60 30 120 41.2 3.03 Unit V V A A A W °C/W Tj Tstg 150 –55 to +150 °C °C Notes: 1. Pulse width limited by safe operating area. R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Page 1 of 6 RJP60F4DPM Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min 4 Typ 1.4 1.7 1900 70 33 45 150 70 80 Max 100 ±1 8 1.82 Unit A A V V V pF pF pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 30 A, VGE = 15V Note3 IC = 60 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note3 Inductive load Notes: 3. Pulse test R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Page 2 of 6 RJP60F4DPM Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics Collector Current IC (A) 120 100 10 10 μs PW = 0 10 1 μs 0.1 Tc = 25°C 1 shot pulse 0.01 10 10 V 9.5 V 15 V 60 9V 40 8.5 V 20 1 0 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 100 VCE = 10 V Pulse Test 80 60 40 Tc = 75°C 25°C –25°C 20 0 4 6 8 10 12 14 3.0 Ta = 25°C Pulse Test 2.4 IC = 60 A 1.8 1.2 30 A 0.6 6 Gate to Emitter Voltage VGE (V) 2.0 VGE = 15 V Pulse Test IC = 60 A 1.8 1.6 30 A 1.4 15 A 1.2 1.0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 8 10 12 15 A 14 16 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 11 V 12 V 80 1000 100 120 Collector Current IC (A) 100 0 1 Ta = 25°C Pulse Test VGE = 8 V Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical) 10 VCE = 10 V 8 6 IC = 10 mA 4 1 mA 2 0 -25 0 25 50 75 100 125 150 Junction Temperature Tj (°C) Page 3 of 6 RJP60F4DPM Preliminary Typical Capacitance vs. Colloctor to Emitter Voltage Capacitance C (pF) Cies 1000 100 Coes Cres 10 VGE = 0 V f = 1 MHz Ta = 25°C 1 0 50 100 150 200 250 300 VCE 600 12 VCE = 600 V 300 V 400 8 200 4 VCE = 600 V 300 V 0 0 20 40 60 IC = 30 A 80 0 100 Gate Charge Qg (nC) Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) Swithing Energy Losses E (μJ) 100000 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tr includes the diode recovery tf td(off) 100 tr td(on) 10 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C Eon includes the diode recovery 10000 1000 Eoff 100 Eon 10 1 10 1 100 10 100 200 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 240 1600 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω tr includes the diode recovery 200 160 Swithing Energy Losses E (μJ) Switching Times t (ns) 16 VGE Colloctor to Emitter Voltage VCE (V) 1000 Switching Times t (ns) 800 Gate to Emitter Voltage VGE (V) 10000 Colloctor to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) tr 120 td(off) 80 tf 40 td(on) 0 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon includes the diode recovery 1200 Eoff 800 Eon 400 0 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 4 of 6 RJP60F4DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 θj − c(t) = γs (t) • θj − c θj − c = 3.03 °C/W, Tc = 25 °C 0.2 0.1 0.1 0.05 PDM 0.02 0.01 0.01 10 μ 1m PW T PW T 1 shot pulse 100 μ D= 10 m Pulse Width 100 m 1 10 10 PW (s) Switching Time Test Circuit Waveform 90% Diode clamp VGE L 90% IC D.U.T 10% 10% 1% 10% td(on) VCC 90% tr td(off) tf ttail ton Rg toff VCE 10% R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Page 5 of 6 RJP60F4DPM Preliminary Package Dimensions RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 MASS[Typ.] 5.2g 5.0 ± 0.3 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 21.0 ± 0.5 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Orderable Part Number RJP60F4DPM-00#T1 R07DS0586EJ0100 Rev.1.00 Nov 25, 2011 Quantity 360 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. 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