RENESAS RJP60F4DPM

Preliminary Datasheet
RJP60F4DPM
600 V - 30 A - IGBT
High Speed Power Switching
R07DS0586EJ0100
Rev.1.00
Nov 25, 2011
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C)
 Trench gate and thin wafer technology
 High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1. Gate
2. Collector
3. Emitter
G
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
PC
j-c
Ratings
600
30
60
30
120
41.2
3.03
Unit
V
V
A
A
A
W
°C/W
Tj
Tstg
150
–55 to +150
°C
°C
Notes: 1. Pulse width limited by safe operating area.
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6
RJP60F4DPM
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Min


4









Typ



1.4
1.7
1900
70
33
45
150
70
80
Max
100
±1
8
1.82








Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 30 A, VGE = 15V Note3
IC = 60 A, VGE = 15V Note3
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note3
Inductive load
Notes: 3. Pulse test
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 2 of 6
RJP60F4DPM
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
Collector Current IC (A)
120
100
10
10
μs
PW
=
0
10
1
μs
0.1
Tc = 25°C
1 shot pulse
0.01
10
10 V
9.5 V
15 V
60
9V
40
8.5 V
20
1
0
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
100
VCE = 10 V
Pulse Test
80
60
40
Tc = 75°C
25°C
–25°C
20
0
4
6
8
10
12
14
3.0
Ta = 25°C
Pulse Test
2.4
IC = 60 A
1.8
1.2
30 A
0.6
6
Gate to Emitter Voltage VGE (V)
2.0
VGE = 15 V
Pulse Test
IC = 60 A
1.8
1.6
30 A
1.4
15 A
1.2
1.0
−25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
8
10
12
15 A
14
16
18
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
11 V
12 V
80
1000
100
120
Collector Current IC (A)
100
0
1
Ta = 25°C
Pulse Test
VGE = 8 V
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector Current IC (A)
1000
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
10
VCE = 10 V
8
6
IC = 10 mA
4
1 mA
2
0
-25
0
25
50
75
100 125 150
Junction Temperature
Tj (°C)
Page 3 of 6
RJP60F4DPM
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
Capacitance C (pF)
Cies
1000
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
1
0
50
100
150
200
250
300
VCE
600
12
VCE = 600 V
300 V
400
8
200
4
VCE = 600 V
300 V
0
0
20
40
60
IC = 30 A
80
0
100
Gate Charge Qg (nC)
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
Swithing Energy Losses E (μJ)
100000
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
tr includes the diode recovery
tf
td(off)
100
tr
td(on)
10
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
Eon includes the diode recovery
10000
1000
Eoff
100
Eon
10
1
10
1
100
10
100 200
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
240
1600
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
tr includes the diode recovery
200
160
Swithing Energy Losses E (μJ)
Switching Times t (ns)
16
VGE
Colloctor to Emitter Voltage VCE (V)
1000
Switching Times t (ns)
800
Gate to Emitter Voltage VGE (V)
10000
Colloctor to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
tr
120
td(off)
80
tf
40
td(on)
0
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
1200
Eoff
800
Eon
400
0
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Page 4 of 6
RJP60F4DPM
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
θj − c(t) = γs (t) • θj − c
θj − c = 3.03 °C/W, Tc = 25 °C
0.2
0.1
0.1 0.05
PDM
0.02
0.01
0.01
10 μ
1m
PW
T
PW
T
1 shot pulse
100 μ
D=
10 m
Pulse Width
100 m
1
10
10
PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp
VGE
L
90%
IC
D.U.T
10%
10%
1%
10%
td(on)
VCC
90%
tr
td(off) tf ttail
ton
Rg
toff
VCE
10%
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Page 5 of 6
RJP60F4DPM
Preliminary
Package Dimensions
RENESAS Code
PRSS0003ZA-A
Previous Code
TO-3PFM / TO-3PFMV
15.6 ± 0.3
2.0 ± 0.3
2.7 ± 0.3
φ3.2
+ 0.4
– 0.2
MASS[Typ.]
5.2g
5.0 ± 0.3
Unit: mm
5.5 ± 0.3
3.2 ± 0.3
4.0 ± 0.3
2.6
0.86
1.6
0.86
0.66
21.0 ± 0.5
JEITA Package Code
SC-93
5.0 ± 0.3
19.9 ± 0.3
Package Name
TO-3PFM
+ 0.2
– 0.1
0.2
0.9 +– 0.1
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Orderable Part Number
RJP60F4DPM-00#T1
R07DS0586EJ0100 Rev.1.00
Nov 25, 2011
Quantity
360 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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