RENESAS RJH60D1DPE_11

Preliminary Datasheet
RJH60D1DPE
Silicon N Channel IGBT
Application: Inverter
R07DS0157EJ0300
Rev.3.00
Nov 16, 2010
Features
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage
VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (100 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching
tf = 90 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , , inductive load)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to Emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
20
10
40
10
40
52
2.4
4.2
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 1 of 7
RJH60D1DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
ICES / IR
Min
—
Typ
—
Max
5
Unit
A
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
tsc
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
1.9
2.6
275
25
7.5
12.0
2.0
6.0
30
13
80
90
5.0
±1
6.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 10 A, VGE = 15 V Note3
IC = 20 A, VGE = 15 V Note3
FRD forward voltage
VF
trr
1.4
100
1.9
—
V
ns
IF = 10 A Note3
FRD reverse recovery time
—
—
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Short circuit withstand time
Test Conditions
VCE = 600 V, VGE = 0
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 10 A
VCC = 300V, VGE = 15 V
IC = 10 A,
Rg = 5 
Inductive load
VCC  360V, VGE = 15 V
IF = 10 A
diF/dt = 100 A/s
Notes: 3. Pulse test.
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Page 2 of 7
RJH60D1DPE
Preliminary
Main Characteristics
Maximum DC Collector Current vs.
Case Temperature
60
30
50
25
Collector Current IC (A)
Collector Dissipation Pc (W)
Collector Dissipation vs.
Case Temperature
40
30
20
10
0
25
50
75
10
5
0
100 125 150 175
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA
60
PW
=
10
10
Collector Current IC (A)
100
μs
0
10
μs
Collector Current IC (A)
15
0
0
1
0.1
0.01
1
Tc = 25°C
Single pulse
50
40
30
20
10
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
IGBT Output Characteristics (Typical)
IGBT Output Characteristics (Typical)
40
40
18 V
Ta = 25°C
Pulse Test
30
12 V
20
10 V
10
VGE = 8 V
0
18 V
Ta = 150°C
Pulse Test
15 V
Collector Current IC (A)
Collector Current IC (A)
20
15 V
30
12 V
20
10 V
10
VGE = 8 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 7
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
Ta = 25°C
Pulse Test
5
IC = 10 A
4
20 A
3
2
1
0
0
4
8
12
16
20
Collector to Emitter Satularion Voltage
VCE(sat) (V)
Collector to Emitter Satularion Voltage
VCE(sat) (V)
RJH60D1DPE
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
Ta = 150°C
Pulse Test
5
IC = 10 A
20 A
4
3
2
1
0
0
Gate to Emitter Voltage VGE (V)
8
12
16
20
Gate to Emitter Voltage VGE (V)
Transfer Characteristics (Typical)
Diode Forward Characteristics (Typical)
40
30
VCE = 10 V
Pulse Test
25
20
Forward Current IF (A)
Collector Current IC (A)
4
Ta = 25°C
150°C
15
10
5
0
Ta = 25°C
30
150°C
20
10
VCE = 0 V
Pulse Test
0
0
4
8
12
Gate to Emitter Voltage VGE (V)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
16
0
1
2
3
4
Forward Voltege VF (V)
Page 4 of 7
RJH60D1DPE
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
1000
tf
td(off)
100
td(on)
10
tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1000
Eoff
100
Eon
10
2
5
10
20
50
2
Switching Characteristics (Typical) (3)
Swithing Energy Losses E (μJ)
Switching Times t (ns)
td(off)
tf
td(on)
tr
10
2
20
50
Switching Characteristics (Typical) (4)
1000
VCC = 300 V, VGE = 15 V
IC = 10 A, Ta = 25°C
100
10
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
1000
5
VCC = 300 V, VGE = 15 V
IC = 10 A, Ta = 25°C
Eoff
100
Eon
10
5
10
20
Gate Registance Rg (Ω)
(Inductive load)
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
50
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Page 5 of 7
RJH60D1DPE
Preliminary
Thermal Impedance θj – c (°C/W)
Thermal Impedance vs. Pulse Width (IGBT)
10
1
Tc = 25°C
Single pulse
0.1
100 μ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Thermal Impedance θj – c (°C/W)
Thermal Impedance vs. Pulse Width (Diode)
10
1
Tc = 25°C
Single pulse
0.1
100 μ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp/
D.U.T
Vin
L
10%
90%
Rg
D.U.T/
Driver
VCC
Ic
tr
ton
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
10%
10%
td(on)
90%
td(off)
tf
toff
Page 6 of 7
RJH60D1DPE
Preliminary
Package Dimension
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
7.8
6.6
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Ordering Information
Orderable Part Number
RJH60D1DPE-00-J3
R07DS0157EJ0300 Rev.3.00
Nov 16, 2010
Quantity
1000 pcs
Shipping Container
Taping
Page 7 of 7
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
7.
Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0