Preliminary Datasheet RJH60D1DPE Silicon N Channel IGBT Application: Inverter R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , , inductive load) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to Emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 20 10 40 10 40 52 2.4 4.2 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 Page 1 of 7 RJH60D1DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol ICES / IR Min — Typ — Max 5 Unit A IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf tsc — 4.0 — — — — — — — — — — — — 3.0 — — 1.9 2.6 275 25 7.5 12.0 2.0 6.0 30 13 80 90 5.0 ±1 6.0 2.5 — — — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns ns s VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 10 A, VGE = 15 V Note3 IC = 20 A, VGE = 15 V Note3 FRD forward voltage VF trr 1.4 100 1.9 — V ns IF = 10 A Note3 FRD reverse recovery time — — Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Short circuit withstand time Test Conditions VCE = 600 V, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 10 A VCC = 300V, VGE = 15 V IC = 10 A, Rg = 5 Inductive load VCC 360V, VGE = 15 V IF = 10 A diF/dt = 100 A/s Notes: 3. Pulse test. R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 Page 2 of 7 RJH60D1DPE Preliminary Main Characteristics Maximum DC Collector Current vs. Case Temperature 60 30 50 25 Collector Current IC (A) Collector Dissipation Pc (W) Collector Dissipation vs. Case Temperature 40 30 20 10 0 25 50 75 10 5 0 100 125 150 175 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 60 PW = 10 10 Collector Current IC (A) 100 μs 0 10 μs Collector Current IC (A) 15 0 0 1 0.1 0.01 1 Tc = 25°C Single pulse 50 40 30 20 10 0 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) IGBT Output Characteristics (Typical) IGBT Output Characteristics (Typical) 40 40 18 V Ta = 25°C Pulse Test 30 12 V 20 10 V 10 VGE = 8 V 0 18 V Ta = 150°C Pulse Test 15 V Collector Current IC (A) Collector Current IC (A) 20 15 V 30 12 V 20 10 V 10 VGE = 8 V 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 7 Preliminary Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 6 Ta = 25°C Pulse Test 5 IC = 10 A 4 20 A 3 2 1 0 0 4 8 12 16 20 Collector to Emitter Satularion Voltage VCE(sat) (V) Collector to Emitter Satularion Voltage VCE(sat) (V) RJH60D1DPE Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) 6 Ta = 150°C Pulse Test 5 IC = 10 A 20 A 4 3 2 1 0 0 Gate to Emitter Voltage VGE (V) 8 12 16 20 Gate to Emitter Voltage VGE (V) Transfer Characteristics (Typical) Diode Forward Characteristics (Typical) 40 30 VCE = 10 V Pulse Test 25 20 Forward Current IF (A) Collector Current IC (A) 4 Ta = 25°C 150°C 15 10 5 0 Ta = 25°C 30 150°C 20 10 VCE = 0 V Pulse Test 0 0 4 8 12 Gate to Emitter Voltage VGE (V) R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 16 0 1 2 3 4 Forward Voltege VF (V) Page 4 of 7 RJH60D1DPE Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 10000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 tf td(off) 100 td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 1000 Eoff 100 Eon 10 2 5 10 20 50 2 Switching Characteristics (Typical) (3) Swithing Energy Losses E (μJ) Switching Times t (ns) td(off) tf td(on) tr 10 2 20 50 Switching Characteristics (Typical) (4) 1000 VCC = 300 V, VGE = 15 V IC = 10 A, Ta = 25°C 100 10 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 1000 5 VCC = 300 V, VGE = 15 V IC = 10 A, Ta = 25°C Eoff 100 Eon 10 5 10 20 Gate Registance Rg (Ω) (Inductive load) R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 50 2 5 10 20 50 Gate Registance Rg (Ω) (Inductive load) Page 5 of 7 RJH60D1DPE Preliminary Thermal Impedance θj – c (°C/W) Thermal Impedance vs. Pulse Width (IGBT) 10 1 Tc = 25°C Single pulse 0.1 100 μ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Thermal Impedance θj – c (°C/W) Thermal Impedance vs. Pulse Width (Diode) 10 1 Tc = 25°C Single pulse 0.1 100 μ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Waveform 90% Diode clamp/ D.U.T Vin L 10% 90% Rg D.U.T/ Driver VCC Ic tr ton R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 10% 10% td(on) 90% td(off) tf toff Page 6 of 7 RJH60D1DPE Preliminary Package Dimension JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part Number RJH60D1DPE-00-J3 R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 Quantity 1000 pcs Shipping Container Taping Page 7 of 7 Notice 1. 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