RENESAS RJP60F5DPM

Preliminary Datasheet
RJP60F5DPM
600 V - 40 A - IGBT
High Speed Power Switching
R07DS0587EJ0100
Rev.1.00
Nov 25, 2011
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Trench gate and thin wafer technology
 High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1. Gate
2. Collector
3. Emitter
G
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
PC
j-c
Ratings
600
±30
80
40
160
45
2.78
Unit
V
V
A
A
A
W
°C/W
Tj
Tstg
150
–55 to +150
°C
°C
Notes: 1. Pulse width limited by safe operating area.
2. PW  5 s, duty cycle  1%
R07DS0587EJ0100 Rev.1.00
Nov 25, 2011
Page 1 of 6
RJP60F5DPM
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Min


4









Typ



1.37
1.7
2780
122
43
53
145
105
85
Max
100
±1
8
1.8








Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 40 A, VGE = 15 V Note2
IC = 80 A, VGE = 15 V Note2
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A
VCE = 400 V, VGE = 15 V
Rg = 5  Note2
Inductive load
Notes: 2. Pulse test
R07DS0587EJ0100 Rev.1.00
Nov 25, 2011
Page 2 of 6
RJP60F5DPM
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
100
10
10
Collector Current IC (A)
160
μs
PW
=
10
0
μs
1
0.1
0.01
1
Collector Current IC (A)
10 V
11 V
120
9.5 V
13 V
15 V
80
9V
40
8.5 V
VGE = 8 V
0
10
100
1
0
1000
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
160
Pulse
VCE = Test
10 V
Ta
= 25Test
°C
Pulse
120
80
Tc = 75°C
40
25°C
0
2
4
6
–25°C
8
10
3.0
Ta = 25°C
Pulse Test
2.6
IC = 20 A
40 A
2.2
80 A
1.8
1.4
1.0
6
12
8
2.2
2.0
VGE = 15 V
Pulse Test
IC = 80 A
1.8
40 A
1.6
1.4
20 A
1.2
1.0
−25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
R07DS0587EJ0100 Rev.1.00
Nov 25, 2011
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
10
12
14
16
18
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
10.5 V
Pulse Test
Ta = 25°C
Tc = 25°C
Single pulse
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector Current IC (A)
1000
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
VCE = 10 V
Pulse Test
8
IC = 10 mA
6
1 mA
4
2
0
−25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
Page 3 of 6
RJP60F5DPM
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100
Coes
Cres
Ta = 25°C
10
0
50
100
150
200
250
800
VCE
600
12
VCC = 300 V
600 V
400
8
VCC = 600 V
300 V
200
0
0
20
Switching Characteristics (Typical) (1)
60
80
0
100
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (µJ)
Switching Times t (ns)
40
Gate Charge Qg (nc)
Collector to Emitter Voltage VCE (V)
tf
td(off)
100
tr
td(on)
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
tr includes the diode recovery
10
1
10000
1000
Eoff
100
Eon
10
1
100 200
10
VCC = 400 V, VGE = 15 V
Rg = 5 Ω, Tj = 150°C
Eon includes the diode recovery
10
100 200
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
240
1600
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
tr includes the diode recovery
200
Swithing Energy Losses E (µJ)
Switching Times t (ns)
4
IC = 40 A
Ta = 25°C
300
1000
16
VGE
Gate to Emitter Voltage VGE (V)
VGE = 0 V
f = 1 MHz
Collector to Emitter Voltage VCE (V)
Capacitance C (pF)
10000
Dynamic Input Characteristics (Typical)
160
tf
td(off)
120
tr
80
td(on)
40
0
VCC = 400 V, VGE = 15 V
IC = 30 A, Rg = 5 Ω
Eon includes the diode recovery
1200
Eoff
800
Eon
400
0
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
R07DS0587EJ0100 Rev.1.00
Nov 25, 2011
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Page 4 of 6
RJP60F5DPM
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
θj − c(t) = γs (t) • θj − c
θj − c = 2.78 °C/W, Tc = 25 °C
0.2
0.1
0.1 0.05
PDM
0.02
0.01
0.01
10 μ
1m
PW
T
PW
T
1 shot pulse
100 μ
D=
10 m
Pulse Width
100 m
1
10
10
PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp
VGE
L
90%
IC
D.U.T
10%
10%
1%
10%
td(on)
VCC
90%
tr
td(off) tf ttail
ton
Rg
toff
VCE
10%
R07DS0587EJ0100 Rev.1.00
Nov 25, 2011
Page 5 of 6
RJP60F5DPM
Preliminary
Package Dimensions
RENESAS Code
PRSS0003ZA-A
Previous Code
TO-3PFM / TO-3PFMV
15.6 ± 0.3
2.0 ± 0.3
2.7 ± 0.3
φ3.2
+ 0.4
– 0.2
MASS[Typ.]
5.2g
5.0 ± 0.3
Unit: mm
5.5 ± 0.3
3.2 ± 0.3
4.0 ± 0.3
2.6
0.86
1.6
0.86
0.66
21.0 ± 0.5
JEITA Package Code
SC-93
5.0 ± 0.3
19.9 ± 0.3
Package Name
TO-3PFM
+ 0.2
– 0.1
0.2
0.9 +– 0.1
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Orderable Part Number
RJP60F5DPM-00#T1
R07DS0587EJ0100 Rev.1.00
Nov 25, 2011
Quantity
360 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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