Preliminary Datasheet RJP60F5DPM 600 V - 40 A - IGBT High Speed Power Switching R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3. Emitter G E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Symbol VCES VGES IC IC ic(peak) Note1 PC j-c Ratings 600 ±30 80 40 160 45 2.78 Unit V V A A A W °C/W Tj Tstg 150 –55 to +150 °C °C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Page 1 of 6 RJP60F5DPM Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min 4 Typ 1.37 1.7 2780 122 43 53 145 105 85 Max 100 ±1 8 1.8 Unit A A V V V pF pF pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note2 IC = 80 A, VGE = 15 V Note2 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A VCE = 400 V, VGE = 15 V Rg = 5 Note2 Inductive load Notes: 2. Pulse test R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Page 2 of 6 RJP60F5DPM Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 100 10 10 Collector Current IC (A) 160 μs PW = 10 0 μs 1 0.1 0.01 1 Collector Current IC (A) 10 V 11 V 120 9.5 V 13 V 15 V 80 9V 40 8.5 V VGE = 8 V 0 10 100 1 0 1000 2 3 4 5 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 160 Pulse VCE = Test 10 V Ta = 25Test °C Pulse 120 80 Tc = 75°C 40 25°C 0 2 4 6 –25°C 8 10 3.0 Ta = 25°C Pulse Test 2.6 IC = 20 A 40 A 2.2 80 A 1.8 1.4 1.0 6 12 8 2.2 2.0 VGE = 15 V Pulse Test IC = 80 A 1.8 40 A 1.6 1.4 20 A 1.2 1.0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 10.5 V Pulse Test Ta = 25°C Tc = 25°C Single pulse Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 10 VCE = 10 V Pulse Test 8 IC = 10 mA 6 1 mA 4 2 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Page 3 of 6 RJP60F5DPM Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes Cres Ta = 25°C 10 0 50 100 150 200 250 800 VCE 600 12 VCC = 300 V 600 V 400 8 VCC = 600 V 300 V 200 0 0 20 Switching Characteristics (Typical) (1) 60 80 0 100 Switching Characteristics (Typical) (2) 100000 Swithing Energy Losses E (µJ) Switching Times t (ns) 40 Gate Charge Qg (nc) Collector to Emitter Voltage VCE (V) tf td(off) 100 tr td(on) VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tr includes the diode recovery 10 1 10000 1000 Eoff 100 Eon 10 1 100 200 10 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C Eon includes the diode recovery 10 100 200 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 240 1600 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω tr includes the diode recovery 200 Swithing Energy Losses E (µJ) Switching Times t (ns) 4 IC = 40 A Ta = 25°C 300 1000 16 VGE Gate to Emitter Voltage VGE (V) VGE = 0 V f = 1 MHz Collector to Emitter Voltage VCE (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) 160 tf td(off) 120 tr 80 td(on) 40 0 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon includes the diode recovery 1200 Eoff 800 Eon 400 0 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 4 of 6 RJP60F5DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 θj − c(t) = γs (t) • θj − c θj − c = 2.78 °C/W, Tc = 25 °C 0.2 0.1 0.1 0.05 PDM 0.02 0.01 0.01 10 μ 1m PW T PW T 1 shot pulse 100 μ D= 10 m Pulse Width 100 m 1 10 10 PW (s) Switching Time Test Circuit Waveform 90% Diode clamp VGE L 90% IC D.U.T 10% 10% 1% 10% td(on) VCC 90% tr td(off) tf ttail ton Rg toff VCE 10% R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Page 5 of 6 RJP60F5DPM Preliminary Package Dimensions RENESAS Code PRSS0003ZA-A Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 MASS[Typ.] 5.2g 5.0 ± 0.3 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 21.0 ± 0.5 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Orderable Part Number RJP60F5DPM-00#T1 R07DS0587EJ0100 Rev.1.00 Nov 25, 2011 Quantity 360 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. 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