Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3. Emitter G E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Symbol VCES VGES Ic Note1 ic(peak) Note1 PC j-c Tj Ratings 630 ±30 40 100 50 2.5 150 Unit V V A A W °C/W °C Tstg –55 to +150 °C Notes: 1. Pulse width limited by safe operating area R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Page 1 of 7 RJP6065DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min — — 3 — — — — — — — — — Typ — — — 1.8 1.5 1130 95 10 40 90 80 450 Max 1 ±100 5.5 2.3 — — — — — — — — Unit A nA V V V pF pF pF ns ns ns ns Test Conditions VCE = 630 V, VGE = 0 VGE = ± 30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note2 IC = 20 A, VGE = 15 V Note2 VCE = 25 V VGE = 0 f = 1 MHz IC = 40 A, Resistive Load RL = 7.5 VGE = 15 V Rg = 5 Notes: 2. Pulse test R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Page 2 of 7 RJP6065DPM Preliminary Main Characteristics Maximum DC Collector Current vs. Case Temperature 60 60 50 50 Collector Current IC (A) Collector Dissipation Pc (W) Collector Dissipation vs. Case Temperature 40 30 20 10 0 30 20 10 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Typical Output Characteristics 100 PW 100 = 0μ 10 10 10 Collector Current IC (A) 1000 μs s Collector Current IC (A) 40 1 0.1 Pulse Test Ta = 25°C 80 8.5 V 9V 8V 10 V 60 15 V 7.5 V 40 7V 6.5 V 20 VGE = 6 V Tc = 25°C Single pulse 0.01 0.1 0 1 10 100 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) 100 Collector Current IC (A) 0 1000 VCE = 10 V Pulse Test 80 60 Tc = 125°C 40 75°C 25°C 20 –25°C 0 0 2 4 6 8 10 Gate to Emitter Voltage VGE (V) R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 10 Pulse Test Ta = 25°C 8 IC = 20 A 6 40 A 60 A 4 2 0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Page 3 of 7 Preliminary 4 IC = 80 A 3 60 A 40 A 2 20 A 1 0 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 6 IC = 40 mA 5 4 10 mA 3 1 mA 2 1 0 −25 Typical Capacitance vs. Collector to Emitter Voltage 100 Coes Cres 0 50 100 150 200 300 Collector to Emitter Voltage VCE (V) R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Collector to Emitter Voltage VCE (V) Capacitance C (pF) Cies 1000 1 25 50 75 100 125 150 Dynamic Input Characteristics (Typical) 10000 VGE = 0 V f = 1 MHz Ta = 25°C 0 Junction Temparature Tj (°C) Junction Temparature Tj (°C) 10 VCE = 10 V Pulse Test 800 VGE IC = 40 A Ta = 25°C VCE = 500 V 300 V 600 VCE 16 12 400 8 200 4 VCE = 500 V 300 V 0 0 8 16 24 32 0 40 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Gate to Emitter Cutoff Voltage VGE(off) (V) RJP6065DPM Gate Charge Qg (nc) Page 4 of 7 RJP6065DPM Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 1000 1000 Switching Time t (ns) Switching Time t (ns) tf td(off) 100 td(on) tr 10 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Ta = 25°C 1 1 tf tr 100 td(off) td(on) VCC = 300 V, VGE = 15 V IC = 40 A, RL = 7.5 Ω, Ta = 25°C 10 10 100 1 10 100 Gate Resistance Rg (Ω) Collector Current IC (A) Switching Characteristics (Typical) (3) Switching Time t (ns) 1000 tf tr 100 td(off) td(on) 10 VCC = 300 V, VGE = 15 V IC = 40 A, RL = 7.5 Ω 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Page 5 of 7 RJP6065DPM Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C D=1 1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2.5°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 PDM 0.02 D= PW T PW T 0.01 1 shot pulse 0.01 100 μ 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Switching Time Test Circuit Waveform Ic Monitor 90% RL Vin Vin Monitor 10% 90% Rg D.U.T. Vin = 15 V VCC Ic 10% 10% td(on) tr ton R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 90% td(off) tf toff Page 6 of 7 RJP6065DPM Preliminary Package Dimensions Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 4.0 ± 0.3 2.6 0.86 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 1.6 0.86 0.66 5.45 ± 0.5 MASS[Typ.] 5.2g + 0.2 – 0.1 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Orderable Part No. RJP6065DPM-00-T1 R07DS0204EJ0100 Rev.1.00 Nov 19, 2010 Quantity 360 pcs Shipping Container Box (Tube) Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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