Preliminary Datasheet RJP60F7DPK 600V - 50A - IGBT High Speed Power Switching R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 3 E Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction temperature Storage temperature Symbol VCES VGES IC IC ic(peak) Note1 PC j-c Tj Tstg Ratings 600 ±30 90 50 180 328.9 0.38 150 –55 to +150 Unit V V A A A W °C/W °C °C Notes: 1. Pulse width limited by safe operating area. R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Page 1 of 6 RJP60F7DPK Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min 4 Typ 1.35 1.6 4700 198 83 63 81 142 74 Max 100 ±1 8 1.75 Unit A A V V V pF pF pF ns ns ns ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 50 A, VGE = 15V Note2 IC = 90 A, VGE = 15V Note2 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note2 Inductive load Notes: 2. Pulse test R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Page 2 of 6 RJP60F7DPK Preliminary Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 1000 Collector Current IC (A) 10 μs s 10 1 0.1 1 9.2 V 9.8 V 9V 10 V 120 15 V 8.8 V 80 8.6 V 8.4 V 8.2 V VGE = 8 V 40 0 10 100 1 0 1000 2 3 4 5 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Voltage VCE (V) Pulse VCE = Test 10 V Ta = 25Test °C Pulse 120 80 Tc = 75°C 40 25°C –25°C 0 0 2 4 6 8 7 5 3 2 1 0 6 1.8 IC = 90 A 1.6 50 A 1.4 20 A 1.2 1.0 0.8 0.6 −25 VGE = 15 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 8 10 12 16 14 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) 2.0 IC = 20 A 50 A 90 A 4 10 Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Pulse Test Ta = 25°C 6 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 9.6 V Tc = 25°C Single pulse 160 Collector Current IC (A) = 0μ 10 Collector Current IC (A) PW 100 9.4 V Pulse Test Ta = 25°C 160 Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) 8 7 IC = 10 mA 6 5 1 mA 4 3 2 −25 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Page 3 of 6 RJP60F7DPK Preliminary Typical Capacitance vs. Collector to Emitter Voltage Capacitance C (pF) Cies 1000 100 Coes Cres VGE = 0 V f = 1 MHz Ta = 25°C 10 0 50 100 150 200 250 800 600 8 200 4 VCC = 600 V 300 V 0 0 40 80 120 160 0 200 Gate Charge Qg (nc) Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 100000 Swithing Energy Losses E (μJ) Switching Times t (ns) 12 400 Collector to Emitter Voltage VCE (V) VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tr includes the diode recovery tf td(off) 100 tr td(on) 10 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C Eon includes the diode recovery 10000 1000 Eoff 100 Eon 10 1 10 100 200 1 10 100 200 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 200 1600 160 td(off) 120 tr tf 80 td(on) 40 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω tr includes the diode recovery 0 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Swithing Energy Losses E (μJ) Switching Times t (ns) VGE VCC = 600 V 300 V 300 1000 16 IC = 50 A Ta = 25°C VCE Gate to Emitter Voltage VGE (V) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 1200 Eoff 800 Eon 400 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon includes the diode recovery 0 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 4 of 6 RJP60F7DPK Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 0.38°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 0.0 2 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ 100 μ PW T 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform 90% VGE RJU60C3TDPP L 10% 90% VCC IC D.U.T 10% 1% 10% td(on) Rg 90% tr td(off) tf ttail ton toff VCE 10% R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Page 5 of 6 RJP60F7DPK Preliminary Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 2.0 0.3 19.9 ± 0.2 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Ordering Information Orderable Part Number RJP60F7DPK-00#T0 R07DS1001EJ0100 Rev.1.00 Jan 22, 2013 Quantity 30 pcs Shipping Container Tube Page 6 of 6 Notice 1. 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