Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Symbol VCES VGES Note1 IC Note1 IC ic(peak) Note1 iDF(peak) Note2 PC j-c j-cd Tj Tstg Ratings 600 30 60 30 120 80 235.8 0.53 2.1 150 –55 to +150 Unit V V A A A A W °C/W °C/W °C °C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Page 1 of 7 RJH60T4DPQ-A0 Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time C-E diode forward voltage C-E diode reverse recovery time Symbol ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres td(on) tr td(off) tf VECF trr Min 4 Typ 1.7 2.2 1900 93 33 45 86 85 72 1.2 100 Max 100 ±1 8 2.2 1.6 Unit A A V V V pF pF pF ns ns ns ns V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 mA IC = 30 A, VGE = 15V Note3 IC = 60 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note3 Inductive load IF = 20 A Note3 IF = 10 A diF/dt = 20 A/s Notes: 3. Pulse test R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Page 2 of 7 RJH60T4DPQ-A0 Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 120 Collector Current IC (A) PW = 10 μs 100 10 1 0.1 Ta = 25°C 1 shot pulse 0.01 100 10 100 9V 8.8 V 8.6 V 15 V 8.4 V 60 8.2 V 8V 7.8 V 40 20 1 0 1000 2 3 5 4 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 120 100 VCE = 10 V Pulse Test 80 Ta = 75°C 60 25°C 40 –25°C 20 0 0 2 4 6 8 10 3.5 Ta = 25°C Pulse Test 3.0 2.5 IC = 60 A 2.0 30 A 15 A 1.5 1.0 6 Gate to Emitter Voltage VGE (V) 2.8 VGE = 15 V Pulse Test IC = 60 A 2.4 2.0 30 A 1.6 15 A 1.2 0.8 −25 0 25 50 75 100 125 150 Junction Temperature Tj (°C) R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 8 10 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage VGE(off) (V) Collector to Emitter Saturation Voltage vs. Junction Temperature (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) 9.5 V 10 V 80 0 1 Collector Current IC (A) Ta = 25°C Pulse Test VGE = 7.6 V Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (A) 1000 Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical) 10 VCE = 10 V Pulse test 8 IC = 10 mA 6 4 1 mA 2 0 -25 0 25 50 75 100 125 150 Junction Temperature Tj (°C) Page 3 of 7 RJH60T4DPQ-A0 Preliminary Typical Capacitance vs. Colloctor to Emitter Voltage Diode Forward Characteristics (Typical) 10000 VCE = 0 V Ta = 25°C Pulse Test 80 Cies Capacitance C (pF) Forward Current IF (A) 100 60 40 20 1000 100 Coes Cres 10 1 0 0 0.4 0.8 1.2 1.6 2.0 VGE = 0 V f = 1 MHz Ta = 25°C 0 50 100 150 200 250 300 Colloctor to Emitter Voltage VCE (V) Forward Voltage VF (V) 800 16 VGE VCE 12 600 VCC = 600 V 300 V 8 400 VCC = 600 V 300 V 200 0 0 18 36 54 4 IC = 30 A Ta = 25°C 72 Gate to Emitter Voltage VGE (V) Colloctor to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 0 90 Gate Charge Qg (nC) R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Page 4 of 7 RJH60T4DPQ-A0 Preliminary Switching Characteristics (Typical) (1) 100000 Swithing Energy Losses E (μJ) Switching Times t (ns) 1000 Switching Characteristics (Typical) (2) VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C tr includes the diode recovery tf 100 td(off) tr td(on) 10 VCC = 400 V, VGE = 15 V Rg = 5 Ω, Tj = 150°C Eon includes the diode recovery 10000 1000 Eoff Eon 100 10 1 10 100 200 1 100 200 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) 160 1600 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω tr includes the diode recovery 120 Swithing Energy Losses E (μJ) Switching Times t (ns) 10 tr td(off) 80 tf 40 td(on) 0 VCC = 400 V, VGE = 15 V IC = 30 A, Rg = 5 Ω Eon includes the diode recovery 1200 Eoff 800 Eon 400 0 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 0 25 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 5 of 7 RJH60T4DPQ-A0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 θj − c(t) = γs (t) • θj − c θj − c = 0.53 °C/W, Tc = 25 °C 1 shot pulse 0.02 0.01 PDM 0.1 D= PW T PW T 0.01 10 μ 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2.1°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 2 0.0 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform 90% Diode clamp VGE L 90% IC D.U.T 10% 10% 1% 10% td(on) VCC 90% tr td(off) tf ttail ton Rg toff VCE 10% R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Page 6 of 7 RJH60T4DPQ-A0 Preliminary Package Dimensions JEITA Package Code RENESAS Code PRSS0003ZH-A Previous Code MASS[Typ.] 6.14g Unit: mm 3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247A 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH60T4DPQ-A0-T0 R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Quantity 450 pcs Shipping Container Box (Tube) Page 7 of 7 Notice 1. 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