polyfet rf devices LB501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 175.0 Watts Push - Pull Package Style LB "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 440 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.44 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 23.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 175.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 13 50 Load Mismatch Tolerance 10:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 50.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 4.8 Mho Vds = 10V, Vgs = 5V 0.30 Ohm Vgs = 20V, Ids =13.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 30.00 Amp Ciss Common Source Input Capacitance 150.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 7.5 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 100.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LB501 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LB501 F=500M H z; V ds=28V dc, Idq=1.2A 210 17 180 16 150 L5 1 DIE CAPACITANCE 1000 Coss 15 Pout 100 14 120 Ciss 13 90 Gain 10 12 60 30 Crss 11 Efficiency @180W = 55% 10 0 0 4 8 12 P in in W a tts 16 1 20 0 2.5 5 7.5 12.5 15 17.5 20 22.5 25 27.5 30 VDS IN VOLTS IV CURVE ID & GM VS VGS L5B 1DIE IV L5B 1 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos 40 35 30 ID IN AMPS 10 25 20 15 10 5 Id 10.00 1.00 gM 0.10 0 0 vg=2v 2 4 Vg=4v 6 8 10 12 VDS IN VOLTS Vg=6v 14 vg=8v 16 18 0 20 0 2 vg=12v Zin Zout 4 6 8 10 12 Vgs in Volts 14 16 18 20 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com