polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 12.0 Watts Single Ended Package Style AP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 40 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 5.00 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 2.4 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 12.0 WATTS OUTPUT ) MAX 10 45 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.60 A, Vds = 28.0 V, F =1,000 MHz % Idq = 0.60 A, Vds = 28.0 V, F =1,000 MHz Relative Idq = 0.60 A, Vds = 28.0 V, F =1,000 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 0.6 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 30.00 mA, Vgs = 0V Ids = 0.06 A, Vgs = Vds 0.9 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 1.30 Ohm Vgs = 20V, Ids = 1.50 A Idsat Saturation Current 4.20 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 1.8 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 18.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SP203 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SP203 POUT VS PIN Freq=1000MHz, VDS=28V, Idq=.6A S2A 3 DICE CAPACITANCE 100 13.00 14 12.00 Pout 12 11.00 10 10.00 8 9.00 Gain 6 8.00 Efficiency = 45% 4 7.00 2 6.00 0 5.00 0 0.5 1 1.5 2 2.5 3 PIN IN WATTS 3.5 4 4.5 CAPACITANCE IN PFS 16 10 1 0.1 0 5 4 8 IV CURVE 16 20 24 28 ID & GM VS VGS S2A 3 DIE ID & GM Vs VG S2A 3 DIE IV 10.00 Id in amps; Gm in mhos 4 3.5 3 ID IN AMPS 12 VDS IN VOLTS 2.5 2 1.5 1 Id 1.00 0.10 gM 0.5 0.01 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com