polyfet rf devices SK702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 90.0 Watts Push - Pull Package Style AK "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 190 Watts Maximum Junction Temperature o 0.85 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 11.5 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 90.0 WATTS OUTPUT ) MAX 10 55 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 40.00 mA, Vgs = 0V Ids = 0.20 A, Vgs = Vds 2.4 Mho Vds = 10V, Vgs = 5V 0.50 Ohm Vgs = 20V, Ids = 5.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 14.00 Amp Ciss Common Source Input Capacitance 100.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 6.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 64.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/16/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SK702 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SH702 F=500MHZ, VDS=28V, Idq=.8A S1A 2 DICE CAPACITANCE 1000 110 13 Coss 90 12 80 100 Pout 70 11 60 50 10 Gain 40 30 CAPACITANCE IN PFS 100 Efficiency = 55% 9 20 Ciss 10 Crss 10 0 8 0 2 4 6 8 10 PIN IN WATTS 12 14 1 16 0 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S1A 2 DIE IV S1A 2 DIE ID & GM Vs VG 100.00 16 Id in amps; Gm in mhos 14 12 Id ID IN AMPS 10.00 10 8 6 4 1.00 gM 2 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 03/16/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com