polyfet rf devices L2701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style S02 "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 1.80 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 4.5 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 30.0 WATTS OUTPUT ) MAX 13 45 Load Mismatch Tolerance Drain to Gate Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 65 2 Ids = 0.20 mA, Vgs = 0V Ids = 0.20 A, Vgs = Vds 1.6 Mho Vds = 10V, Vgs = 5V 0.65 Ohm Vgs = 20V, Ids = 8.00 A 10.00 Amp Vgs = 20V, Vds = 10V 60.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz 1.6 pF Vds = 28.0 Vgs = 0V, F = 1 MHz 30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com L2701 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L2701 Pin vs Pout Freq=500MH z, Vds=28V dc, Idq=.4A L1B 1 DIE CAPACITANCE 1000 18 50 17 40 Pout Coss 100 16 30 Ciss 15 20 Gain 10 14 10 13 Efficiency @30 watts = 55% 0 Crss 1 12 0 0.5 1 1.5 P in in W a tts 2 2.5 0 3 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS L1B 1 DIE IV L1B 1 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos 12 10 8 ID IN AMPS Id 10.00 6 1.00 4 2 gM 0.10 0 0 4 vg=2v 8 Vg=4v 12 VDS IN VOLTS vg=8v Vg=6v 16 20 0 vg=12v 0 2 Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com