L2711 - Polyfet

polyfet rf devices
L2711
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
7.0 Watts Single Ended
Package Style S02
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
80 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
1.80 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
8.0 A
Drain to
Source
Voltage
Gate to
Source
Voltage
36 V
36 V
20 V
7.0 WATTS OUTPUT )
MAX
10
55
Load Mismatch Tolerance
Drain to
Gate
Voltage
10:1
UNITS TEST CONDITIONS
dB
Idq = 0.20 A, Vds =
7.5 V, F = 500 MHz
%
Idq = 0.20 A, Vds =
7.5 V, F = 500 MHz
Relative
Idq = 0.20 A, Vds =
7.5 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
2.0
mA
Vds = 7.5 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
Rdson
Saturation Resistance
Idsat
Saturation Current
Ciss
Common Source Input Capacitance
Crss
Common Source Feedback Capacitance
Coss
Common Source Output Capacitance
36
2
Ids =
0.20 mA, Vgs = 0V
Ids = 0.20 A, Vgs = Vds
1.7
Mho
Vds = 10V, Vgs = 5V
0.40
Ohm
Vgs = 20V, Ids = 8.00 A
13.00
Amp
Vgs = 20V, Vds = 10V
50.0
pF
Vds =
7.5 Vgs = 0V, F = 1 MHz
2.0
pF
Vds =
7.5 Vgs = 0V, F = 1 MHz
40.0
pF
Vds =
7.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
L2711
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V
L1C 1DIE CAPACITANCE
13
9
1000
8
12
Pout
7
100
Ciss
Gain
11
6
Coss
10
5
Crss
10
Efficiency = 55%
4
1
3
0.2
0.3
0.4
0.5
0.6
PIN IN WATTS
0.7
9
0.9
0.8
0
5
10
15
20
25
30
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
L1C 1 DIE IV
L1C 1 DIE ID, GM vs VG
100
16
14
ID IN AMPS
12
ID
10
8
10
6
4
2
G
0
0
2
4
vg=2v
6
Vg=4v
8
10
12
VDS IN VOLTS
Vg=6v
vg=8v
14
16
vg=10v
18
vg=12v
20
1
0
2
Zin Zout
4
6
8
Vgs
in Volts
10
12
14
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com