LX401 - Polyfet

polyfet rf devices
LX401
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
60.0 Watts Single Ended
Package Style LX2
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
120 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
1.30 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
7.0 A
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
70 V
20 V
60.0 WATTS OUTPUT )
MAX
10
55
Load Mismatch Tolerance
Drain to
Gate
Voltage
10:1
UNITS TEST CONDITIONS
dB
Idq = 0.20 A, Vds =
28.0 V, F =1,000 MHz
%
Idq = 0.20 A, Vds =
28.0 V, F =1,000 MHz
Relative
Idq = 0.20 A, Vds = 28.0 V, F =1,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
Rdson
Saturation Resistance
Idsat
Saturation Current
Ciss
Common Source Input Capacitance
Crss
Common Source Feedback Capacitance
Coss
Common Source Output Capacitance
65
2
Ids = 25.00 mA, Vgs = 0V
Ids = 0.30 A, Vgs = Vds
2.7
Mho
Vds = 10V, Vgs = 5V
0.28
Ohm
Vgs = 20V, Ids = 8.00 A
17.00
Amp
Vgs = 20V, Vds = 10V
80.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
4.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
50.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
LX401
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
LX401 Pin vs Pout Freq=1000MHz, VDS=28V, Idq=.6A
70
14.00
L4 1 DIE CAPACITANCE
1000
60
13.00
Coss
Pout
50
100
12.00
40
Ciss
30
11.00
Gain
10
20
Efficiency = 55%
10.00
10
Crss
0
1
9.00
0
1
2
3
4
5
PIN IN WATTS
6
7
0
8
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
27.5
30
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
L4B 1 DIE IV
L4B 1 DIE ID & GM Vs VG
100.00
Id in amps; Gm in mhos
18
16
ID IN AMPS
14
12
10
8
6
4
Id
10.00
1.00
gM
2
0.10
0
0
2
vg=2v
4
Vg=4v
6
8
10
12
14
VDS IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
12
Vgs in Volts
14
16
18
20
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com