Preliminary Datasheet RJK1560DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Features Capable of 2.5 V gate drive Low on-resistance RDS(on) = 0.043 typ. (at ID = 10 A, VGS = 4 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAP Note3 EAR Note3 Ratings 150 ±10 20 80 20 80 16 19.2 Unit V V A A A A A mJ Pch Note2 ch-c Tch Tstg 28.5 4.38 150 –55 to +150 W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Page 1 of 6 RJK1560DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min 150 10 — — 0.5 — — — — — — — — — — — — Typ — — — — — 0.043 0.044 6720 205 102 43 79 250 117 52 13 14 Max — — 1 10 1.5 0.060 0.070 — — — — — — — — — — Unit V V A A V pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.83 75 1.30 — V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VDS = 150 V, VGS = 0 VGS = 10 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 4 V Note4 ID = 10 A, VGS = 2.5 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 10 A VGS = 4 V RL = 7.5 Rg = 10 VDD = 120 V VGS = 4 V ID = 20 A IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Page 2 of 6 RJK1560DPP-M0 Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 80 100 10 Drain Current ID (A) Ta = 25°C Pulse Test μs PW 10 00 =1 Operation in this area is limited by RDS(on) 1 μs 0.1 10 100 10 V 1.9 V 1.8 V 1.7 V 20 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) 10 Tc = 75°C −25°C 25°C 1 0.1 0.01 0 0.4 0.8 1.2 1.6 Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test Drain Current ID (A) 2V 40 0 1000 100 Static Drain to Source on State Resistance RDS(on) (Ω) 60 3 V, 5 V VGS = 1.6 V Tc = 25°C 1 shot 0.01 0.1 1 1 Ta = 25°C Pulse Test VGS = 2.5 V 0.1 4V 0.01 2.0 1 10 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) 0.16 VGS = 4 V Pulse Test 0.12 ID = 20 A 0.08 10 A 0.04 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Static Drain to Source on State Resistance RDS(on) (Ω) Drain Current ID (A) 1000 0.16 VGS = 2.5 V Pulse Test 0.12 ID = 20 A 0.08 10 A 0.04 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 RJK1560DPP-M0 Preliminary Typical Capacitance vs. Drain to Source Voltage 10000 1000 Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time (Typical) 100 1 10 100 Crss VGS = 0 f = 1 MHz Ta = 25°C 10 0 1000 20 40 60 80 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics (Typical) Reverse Drain Current vs. Source to Drain Voltage (Typical) 16 ID = 20 A Ta = 25 °C 120 12 VDS VGS VDD = 120 V 60 V 30 V 80 40 0 4 VDD = 120 V 60 V 30 V 50 0 100 8 150 200 0 250 Gate Charge Qg (nC) 80 Reverse Drain Current IDR (A) 160 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Coss 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 Gate to Source Cutoff Voltage VGS(off) (V) 1000 VGS = 0 Ta = 25 °C Pulse Test 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 2.0 VDS = 10 V 1.6 ID = 10 mA 1 mA 0.1 mA 1.2 0.8 0.4 0 -25 0 25 50 75 Case Temperature R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 100 125 150 Tc (°C) Page 4 of 6 RJK1560DPP-M0 Preliminary Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.03 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.38°C/W, Tc = 25°C 0.02 PDM 1 0.0 1s t ho 0.01 10 μ pu D= lse PW T PW T 100 μ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 75 V 90% td(on) R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 tr 90% td(off) tf Page 5 of 6 RJK1560DPP-M0 Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number RJK1560DPP-M0-T2 R07DS0270EJ0100 Rev.1.00 Mar 07, 2011 Quantity 600 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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