Preliminary Datasheet HAT2105R R07DS0552EJ0200 (Previous: REJ03G1369-0100) Rev.2.00 Oct 11, 2011 Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 1.6 typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25°C) Capable of 4 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 7 8 D D 8 5 7 6 2 G 3 1 2 5 6 D D 4 G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain 4 S1 S3 MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Pch Note3 Tch Tstg Ratings 200 15 0.5 2 0.5 1.3 2 150 –55 to +150 Unit V V A A A W W °C °C Notes: 1. PW 10 s, duty cycle 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s R07DS0552EJ0200 Rev.2.00 Oct 11, 2011 Page 1 of 7 HAT2105R Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Min 200 15 — — 1.0 — — — 0.56 — — — — — — — — Typ — — — — — 1.6 1.9 2.4 0.86 120 29 10 10 14 24 9 0.9 Max — — ±10 5 2.1 2.2 2.7 5.5 — — — — — — — — 1.4 Unit V V A A V S pF pF pF ns ns ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 12 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 10 V Note4 ID = 0.5 A, VGS = 4 V Note4 ID = 2 A, VGS = 5 V Note4 ID = 0.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 5 V, ID = 0.5 A, VDD 30 V IF = 0.5 A, VGS = 0 Note4 Notes: 4. Pulse test R07DS0552EJ0200 Rev.2.00 Oct 11, 2011 Page 2 of 7 HAT2105R Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 2.0 10 Drain Current ID (A) Drain Current ID (A) PW = 10 μs 1 0.1 Operation in this area is limited by RDS(on) 0.01 Ta = 25°C 1 shot 0.001 0.1 1 100 4V 3V 0.8 VGS = 2.5 V 0.4 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) (1) Drain to Source on State Resistance RDS(on) (Ω) 1 Tc = 75°C 0.1 25°C −25°C 0.01 0 1 2 3 4 10 1 0.1 0.1 Static Drain to Source on State Resistance vs. Drain Current (Typical) (2) 1 0.1 0.1 VGS = 5 V Ta = 25°C Pulse Test 1 Drain Current ID (A) R07DS0552EJ0200 Rev.2.00 Oct 11, 2011 10 1 10 Static Drain to Source on State Resistance vs. Drain Current (Typical) (3) Drain to Source on State Resistance RDS(on) (Ω) 10 VGS = 10 V Ta = 25°C Pulse Test Drain Current ID (A) Gate to Source Voltage VGS (V) Drain to Source on State Resistance RDS(on) (Ω) Ta = 25°C Pulse Test 1.2 1000 VDS = 10 V Pulse Test Drain Current ID (A) 1.6 3.5 V 0 10 10 0.001 5V 10 V 10 1 0.1 0.1 VGS = 4 V Ta = 25°C Pulse Test 1 10 Drain Current ID (A) Page 3 of 7 Preliminary Static Drain to Source on State Resistance vs. Temperature (Typical) (1) 5 VGS = 10 V Pulse Test 4 ID = 2 A 3 1A 2 0.5 A 1 0 −25 0 25 50 75 100 125 150 Static Drain to Source on State Resistance RDS(on) (Ω) Static Drain to Source on State Resistance vs. Temperature (Typical) (2) 5 VGS = 5 V Pulse Test 4 ID = 2 A 3 2 1A 0.5 A 1 0 −25 0 5 100 125 150 Reverse Recovery Time trr (ns) 1000 VGS = 4 V Pulse Test 4 ID = 2 A 3 1A 2 0.5 A 1 0 −25 0 25 50 75 100 di / dt = 50 A / μs VGS = 0, Ta = 25°C 10 0.1 100 125 150 0.3 1 Case Temperature Tc (°C) Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics (Typical) 1000 Capacitance C (pF) 75 Body-Drain Diode Reverse Recovery Time (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) (3) Ciss 100 Coss 10 1 0 50 Case Temperature Tc (°C) Crss VGS = 0 f = 1 MHz Ta = 25°C 20 40 60 80 100 Drain to Source Voltage VDS (V) R07DS0552EJ0200 Rev.2.00 Oct 11, 2011 Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance RDS(on) (Ω) Case Temperature Tc (°C) 25 400 16 ID = 0.5 A Ta = 25 °C VGS 300 12 VDD = 150 V 100 V 50 V 200 8 VDS 100 0 0 4 VDD = 150 V 100 V 50 V 2 4 6 0 8 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS(on) (Ω) HAT2105R 10 Gate Charge Qg (nC) Page 4 of 7 Preliminary Reverse Drain Current vs. Source to Drain Voltage (Typical) Reverse Drain Current IDR (A) 0.5 VGS = 0 Ta = 25 °C Pulse Test 0.4 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0552EJ0200 Rev.2.00 Oct 11, 2011 Gate to Source Cutoff Voltage VGS(off) (V) HAT2105R Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 3.0 VDS = 10 V 2.5 ID = 10 mA 2.0 1.5 1 mA 0.1 mA 1.0 0.5 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 5 of 7 HAT2105R Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 D=1 1 0.5 0.2 0.1 0.05 0.1 θch − f(t) = γs (t) · θch − f θch − f = 192°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.02 0.01 0.01 e ls pu ot h 1s PDM 0.001 D= PW T PW T 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) Normalized Transient Thermal Impedance γ s (t) 10 D=1 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 θch − f(t) = γs (t) · θch − f θch − f = 250°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.01 e o sh uls tp 1 PDM 0.001 D= PW T PW T 0.0001 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) R07DS0552EJ0200 Rev.2.00 Oct 11, 2011 Page 6 of 7 HAT2105R Preliminary Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Terminal cross section (Ni/Pd/Au plating) * 3 bp x M e Reference Symbol D E A2 A1 A bp b1 c c1 A1 A L1 L y HE e x y Z L L1 Detail F Dimension in Millimeters Min Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Orderable Part Number HAT2105R-EL-E R07DS0552EJ0200 Rev.2.00 Oct 11, 2011 Quantity 2500 pcs Shipping Container Taping Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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