Preliminary Datasheet RJK1212DNS Silicon N Channel Power MOS FET Power Switching R07DS0092EJ0100 Rev.1.00 Jun 18, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 240 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 120 +12, -5 3 9 3 2 0.34 10 12.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0092EJ0100 Rev.1.00 Jun 18, 2011 Page 1 of 6 RJK1212DNS Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 120 — — 1.2 — — — — — — — — — — — — — Typ — — — — 240 250 6.5 450 42 17 2.7 4.0 1.5 1.0 6.7 3.0 32 Max — ± 0.1 10 2.5 310 340 — — — — — — — — — — — Unit V A A V m m S pF pF pF nC nC nC ns ns ns — — — 3.4 0.83 30 — 1.1 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +12, -5 V, VDS = 0 VDS = 120 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 1.5 A, VGS = 10 V Note4 ID = 1.5 A, VGS = 4.5 V Note4 ID = 1.5 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 4.5 V ID = 3 A VGS = 10 V, ID = 1.5 A VDD 30 V RL = 20 Rg = 4.7 IF = 3 A, VGS = 0 Note4 IF =3 A, VGS = 0 diF/ dt = 100 A/ s Notes: 4. Pulse test R07DS0092EJ0100 Rev.1.00 Jun 18, 2011 Page 2 of 6 RJK1212DNS Preliminary Main Characteristics Maximum Safe Operation Area 50 10 10 8 6 50 100 150 PW = 10 ms 0.1 Operation in this area is limited by RDS(on) 0.01 1 10 100 300 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 10 V 8 4.5 V Drain Current ID (A) Pulse Test Tc = 25°C 3.4 V 3.2 V 6 4 3.0 V 2 VGS = 2.8 V 2 4 6 8 VDS = 5 V Pulse Test 8 Tc = 25°C 6 4 2 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current (Typical) 2.0 Drain to Source on State Resistance RDS(on) (mΩ) Drain Current ID (A) 1 0.001 0.1 200 10 Drain to Source Saturation Voltage VDS(on) (V) s μs μs Tc = 25°C 1 shot Pulse 0 0 m 0 n t io ra pe 2 10 O 4 10 1 C Drain Current ID (A) 12 D Channel Dissipation Pch (W) Power vs.Temperature Derating Pulse Test 1.6 1.2 ID = 3 A 0.8 2A 0.4 0 1A 2 4 6 8 10 12 Gate to Source Voltage VGS (V) R07DS0092EJ0100 Rev.1.00 Jun 18, 2011 1000 VGS = 4.5 V 10 V 100 Pulse Test 10 0.1 1 10 Drain Current ID (A) Page 3 of 6 Preliminary Typical Capacitance vs. Drain to Source Voltage (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) 1000 Capacitance C (pF) 800 10000 Pulse Test ID = 1.5 V 600 VGS = 4.5 V 400 10 V 200 1000 Ciss 100 Coss 10 Crss VGS = 0 f = 1 MHz 0 −25 0 25 50 75 1 0.1 100 125 150 1 10 100 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics (Typical) Reverse Drain Current vs. Source to Drain Voltage (Typical) 60 16 ID = 3 A Ta = 25 °C VDD = 50 V 12 25 V VDS VGS 10 V 40 8 20 4 VDD = 50 V 25 V 10 V 0 2 4 0 6 8 20 Gate Charge Qg (nC) 5 Reverse Drain Current IDR (A) 80 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance RDS(on) (mΩ) RJK1212DNS VGS = 0 V Pulse Test Ta = 25 °C 4 3 2 1 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 0.5 IAP = 2 A VDD = 50 V duty < 0.1% Rg ≥ 50 Ω 0.4 0.3 0.2 0.1 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0092EJ0100 Rev.1.00 Jun 18, 2011 Page 4 of 6 RJK1212DNS Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 1 0.5 0.3 0.2 0.1 0.1 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 12.5°C/W, Tc = 25°C 0.05 2 0.0 PDM 1 0.0 0.03 ot 1sh 0.01 10 μ D= PW T PW T e puls 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 50 V 90% td(on) R07DS0092EJ0100 Rev.1.00 Jun 18, 2011 10% tr 90% td(off) tf Page 5 of 6 RJK1212DNS Preliminary Package Dimensions 3.3 ± 0.1 Previous Code ⎯ MASS[Typ.] 0.022g 2.9 ± 0.1 0.1 Min 3.3 ± 0.1 0.8 Max +0.15 −0.1 RENESAS Code PWSN0008JB-A 0.04Max 0Min Stand-off 0.22 Typ +0.15 −0.1 0.65 Typ (2.55) 0.32 ± 0.08 0.4 0.575 Typ 2.25 ± 0.2 0.4 JEITA Package Code P-HWSON8-2.9x3.1-0.65 1.55 ± 0.2 Package Name HWSON-8 3.1 ± 0.1 Ordering Information Orderable Part Number RJK1212DNS-00-J5 R07DS0092EJ0100 Rev.1.00 Jun 18, 2011 Quantity 5000 pcs Shipping Container Taping Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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