polyfet rf devices SM706 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 135.0 Watts Single Ended Package Style AM "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 270 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.65 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 16.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 135.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 11 75 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 175 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 175 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 6.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 120.00 mA, Vgs = 0V Ids = 0.60 A, Vgs = Vds 7.2 Mho Vds = 10V, Vgs = 5V 0.16 Ohm Vgs = 20V, Ids =15.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 42.00 Amp Ciss Common Source Input Capacitance 300.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 18.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 192.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SM706 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S M 7 0 6 Pout/G a in vs P in F re q= 1 7 5 M H z , V ds= 2 8 V dc, I dq= 1 .0 A S1A 6 DICE CAPACITANCE 1000 14 160 13 Coss CAPACITANCE IN PFS 200 100 P out 120 12 80 11 Gain E fficiency @150W = 72% 40 Ciss 10 Crss 10 1 0 9 0 2 4 6 8 10 12 14 16 18 0 20 4 8 12 16 20 24 28 VDS IN VOLTS P in in W a tts IV CURVE ID & GM VS VGS S1A 6 DIE IV S1A 6 DIE ID & GM Vs VG 50 100.00 Id in amps; Gm in mhos 45 40 ID IN AMPS 35 30 25 20 15 10 Id 10.00 1.00 gM 5 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS IN VOLTS vg=8v Vg=6v 14 16 0 18 20 0 vg=12v Zin Zout 2 4 6 8 10 12 Vgs in Volts 14 16 18 20 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com