polyfet rf devices SM704 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 125.0 Watts Single Ended Package Style AM TM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT "Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 190 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.85 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 11.5 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 125.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR Load Mismatch Tolerance TYP MAX 13 75 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 28.0 V, F = 150 MHz % Idq = 0.80 A, Vds = 28.0 V, F = 150 MHz Relative Idq = 0.80 A, Vds = 28.0 V, F = 150 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 4.0 mA Igss Gate Leakage Current 1 uA Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 80.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.40 A, Vgs = Vds 4.8 Mho Vds = 10V, Vgs = 5V 0.25 Ohm Vgs = 20V, Ids =10.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 28.00 Amp Ciss Common Source Input Capacitance 200.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 12.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 128.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SM704 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S1A 4 DICE CAPACITANCE SM704 POUT VS PIN Freq=150MHz, VDS=28V, Idq=.8A 1000 180 CAPACITANCE IN PFS Coss 160 14.00 140 100 Pout 120 12.00 100 Gain 80 60 10.00 Efficiency = 75% 40 Ciss 10 Crss 20 0 1 8.00 0 2 4 6 8 10 12 PIN IN WATTS 14 16 18 0 20 4 8 IV CURVE 16 20 24 28 ID & GM VS VGS S1A 4 DIE ID & GM Vs VG S1A 4 DIE IV 100.00 35 Id in amps; Gm in mhos Id 30 25 ID IN AMPS 12 VDS IN VOLTS 10.00 20 15 10 5 1.00 gM 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com