polyfet rf devices ST703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80.0 Watts Single Ended Package Style AT "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 150 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 1.00 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 9.0 A Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V 80.0 WATTS OUTPUT ) MAX 13 75 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.60 A, Vds = 28.0 V, F = 175 MHz % Idq = 0.60 A, Vds = 28.0 V, F = 175 MHz Relative Idq = 0.60 A, Vds = 28.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 3.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 60.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 3.6 Mho Vds = 10V, Vgs = 5V 0.35 Ohm Vgs = 20V, Ids = 7.50 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 21.00 Amp Ciss Common Source Input Capacitance 150.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 9.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 96.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com ST703 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S1A 3 DICE CAPACITANCE ST703 Pin vs Pout Freq=175MHz, VDS=28V, Idq=6A 1000 18 17 100 Pout 16 80 15 14 60 Gain 13 40 12 Efficiency@100W = 65% 20 Coss CAPACITANCE IN PFS 120 100 Ciss 10 Crss 11 0 1 10 0 2 4 6 8 0 10 4 8 12 16 20 24 28 VDS IN VOLTS Pin in Watts IV CURVE ID & GM VS VGS S1A 3 DIE IV S1A 3 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos 25 ID IN AMPS 20 15 10 5 Id 10.00 1.00 gM 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 12 Vgs in Volts 14 16 18 20 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com