polyfet rf devices LK142 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 100.0 Watts Push - Pull Package Style AK "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 310 Watts Maximum Junction Temperature o 0.57 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 18.0 A Drain to Gate Voltage Drain to Source Voltage 110 V 110 V Gate to Source Voltage 20 V RF CHARACTERISTICS ( 100.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 16 50 Load Mismatch Tolerance 15:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 50.0 V, F = 500 MHz % Idq = 0.40 A, Vds = 50.0 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 50.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 50.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 110 2 Ids = 50.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 2.0 Mho Vds = 10V, Vgs = 5V 0.50 Ohm Vgs = 20V, Ids = 2.00 A 11.00 Amp Vgs = 20V, Vds = 10V 60.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz 1.4 pF Vds = 50.0 Vgs = 0V, F = 1 MHz 60.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 11/23/0009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LK142 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LK142 Pout/Gain vs Pin: Freq=500MHz, Vds=50Vdc, Idq=.2A Pout 120 16 60 Gain Efficiency@100W = 50% 15 30 Gain in dB Coss 100 Ciss 10 Crss 1 0 14 0 1 2 3 4 0 5 5 10 15 20 25 30 35 40 45 50 V D S I N V OLTS Pin in Watts IV CURVE ID & GM VS VGS L 8 T W O D IC E IV C U R V E L 8 2 D IC E 1 0 .0 0 ID & G M v s V G 12 Id in amps; Gm in mhos 10 ID IN AMPS Pout in Watts 17 90 L8 2 Dice Capacitance 1000 18 CAPACITANCE IN PFS 150 8 6 4 Id 1 .0 0 gM 2 0 0 2 vg =2 v 4 6 V g =4 v 8 10 12 V D S IN V O L T S V g=6 v vg =8v 14 16 vg =1 0 v 18 vg=1 2 v 20 0 .1 0 0 2 4 6 8 10 12 V g s in V o lts Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 11/23/0009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com