polyfet rf devices LR941 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 200.0 Watts Push - Pull Package Style LR "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 500 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.30 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 17.5 A Drain to Gate Voltage Drain to Source Voltage 110 V 110 V Gate to Source Voltage 20 V RF CHARACTERISTICS ( 200.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 13 65 Load Mismatch Tolerance 15:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 50.0 V, F = 500 MHz % Idq = 0.40 A, Vds = 50.0 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 50.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 1.0 mA Vds = 50.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 110 2 Ids = 50.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 3.5 Mho Vds = 10V, Vgs = 5V 0.30 Ohm Vgs = 20V, Ids = 6.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 24.00 Amp Ciss Common Source Input Capacitance 120.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 3.5 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 115.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 11/09/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LR941 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE LR 9 4 1 P out/G a in vs P in: TF 1 2 4 , F re q= 5 0 0 M h z , V d s= 5 0 V dc, I dq = .4 A 300 L9 1 Die Capacitance 1000 15 240 14 180 13 120 12 Gain 60 Gain in dB Pout in Watts P out 11 0 CAPACITANCE IN PFS Coss 5 10 15 20 Ciss 10 Crss 1 10 0 100 0 25 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS Pin in Watts IV CURVE ID & GM VS VGS L R 9 4 1 P o u t /G a in vs P in : F re q = 2 3 0 M h z , V d s = 5 0 V d c , I d q = .4 A L 9 1 D ie IV 25 500 24 20 400 Pout in Watts 10 P out 300 18 200 Gain in dB ID IN AMPS 21 15 G ain 15 5 100 0 0 2 vg= 2v 4 6 V g= 4v 8 VV g=D 6vS 10 12 IN V O vg= L T8vS 14 16 18 20 0 12 0 vg= 10v vg= 12v 10 15 20 25 P in in W a tts Zin Zout PACKAGE DIMENSIONS IN INCHES LR941 Pout/Gain vs Pin: Freq=230Mhz, Vds=50Vdc, Idq=.4A 500 5 24 400 Pout 300 Gain in dB Pout in Watts 21 18 200 Gain 15 100 0 12 0 5 10 15 Pin in Watts 20 25 Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 11/09/2009 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com