polyfet rf devices SD723 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 60.0 Watts Push - Pull Package Style AD "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 270 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.65 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 15.0 A Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 60.0 WATTS OUTPUT ) MAX 13 65 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz % Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 3.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 36 2 Ids = 60.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 3.9 Mho Vds = 10V, Vgs = 5V 0.25 Ohm Vgs = 20V, Ids = 7.50 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 28.50 Amp Ciss Common Source Input Capacitance 135.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 10.5 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 165.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SD723 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SD 723 Pout/Gain vs Pin F=175MH z, Vds = 12.5Vdc, Idq = 800ma 80 19.0 70 18.0 S1C 3 DICE CAPACITANCE 1000 Coss 17.0 60 Pout 16.0 50 100 Ciss 15.0 40 14.0 30 10 13.0 Gain Efficiency@60W=67% 20 Crss 12.0 10 11.0 1 0 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 P in in W a tts 4.50 5.00 5.50 6.00 6.50 0 10.0 7.00 2 4 6 8 10 12 14 16 18 20 14 16 18 VDS IN VOLTS IV CURVE ID & GM VS VGS S1C 3 DIE ID & GM Vs VG S1C 3 DIE IV 100.00 30 Id in amps; Gm in mhos Id 25 ID IN AMPS 20 15 10 5 10.00 gM 1.00 0.10 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VD SINVOLTS vg=8v Vg=6v 14 16 0 18 vg=12v 20 0 2 Zin Zout 4 6 8 10 Vgs in Volts 12 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com