RJP4301APP Nch IGBT for Strobe Flash REJ03G1709-0100 Rev.1.00 Jul 03, 2008 Features • VCES : 430 V • TO-220FN package • High Speed Switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1 : Gate 2 : Collector 3 : Emitter 1 1 2 3 3 Applications Strobe flash Maximum Ratings (Tc = 25°C) Symbol Ratings Unit Collector-emitter voltage Gate-emitter voltage Parameter VCES VGES 430 ±33 V V Collector current (Pulse) ICM 200 A PC Tj Tstg — 30 – 40 to +150 – 40 to +150 2.0 W °C °C g Maximum power dissipation Junction temperature Storage temperature Mass REJ03G1709-0100 Rev.1.00 Jul 03, 2008 Page 1 of 4 Conditions VGE = 0 V VCE = 0 V, Refer to item 4 under Notes on the Actual Specifications CM = 1500 µF (see performance curve) Typical value RJP4301APP Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Ciss Coss Crss td(on) tr td(off) tf Min. 430 — — 3.0 — — — — — — — — Typ. — — — — 4.0 1150 125 14 0.01 0.06 0.15 0.2 Max. — 1 ±0.1 5.5 10 — — — — — — — Unit V µA µA V V pF pF pF µs µs µs µs Performance Curves Maximum Pulse Collector Current Pulse Collector Current ICP (A) 240 CM = 1500 µF Tc ≤ 70°C 200 R = 30 Ω G 160 120 80 40 0 0 10 20 30 Gate-Emitter Voltage VGE (V) REJ03G1709-0100 Rev.1.00 Jul 03, 2008 Page 2 of 4 40 Test conditions IC = 100 µA, VGE = 0 V VCE = 430 V, VGE = 0 V VGE = ±33 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 200 A, VGE = 26 V VDS = 25 V VGS = 0 f = 1 MHz VDD = 200 V ID = 26 A VGS = 300 V RG = 25 Ω RJP4301APP Application Example IXe Vtrig CM + – Trigger Signal Vtrig IGBT Gate Voltage VG VCM RG VCE VG IGBT Xe Tube Current IXe VCM ICP CM VGE Recommended Operation Conditions 300 V 180 A 1200 µF 28 V Maximum Operation Conditions 350 V 200 A 1500 µF 26 V Precautions on Usage 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 1 A. (In general, when RG(off) = 30 Ω, it is satisfied.) 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 200 A : full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours. REJ03G1709-0100 Rev.1.00 Jul 03, 2008 Page 3 of 4 RJP4301APP Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Part No. RJP4301APP-00-T2 Quantity 50 pcs REJ03G1709-0100 Rev.1.00 Jul 03, 2008 Page 4 of 4 Shipping Container Magazine (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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