RENESAS GN4014ZB4LS

GN4014ZB4LD, GN4014ZB4LS,
GN4014ZB4LM
Silicon IGBT Ignition Coil Driver
REJ03G1249-0300
Rev.3.00
Jun 01, 2009
Features
• Including Clamping Zener
VCL = 400 V(typ)
• Low saturation Voltage
VCE(sat) = 1.4 V(typ)
• SMD package
LDPAK
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
4
1
1
2
2
C
1. Gate
2. Collector
3. Emitter
4. Collector
G
3
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to Emitter voltage
Emitter to Collector voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 1 of 7
Symbol
Ratings
Unit
VCES
VGES
VECS
IC
iC(peak)
PCNote1
Tj
370
±20
24
14
18
60
150
V
V
V
A
A
W
°C
Tstg
–55 to +150
°C
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CES
Min
370
Typ
400
Max
430
Unit
V
Test Conditions
Ic = 2 mA, VGE = 0 V
Collector to Emitter breakdown
voltage
Gate to Emitter breakdown voltage
Collector cutoff current
Gate cutoff current
Collector to emitter saturation voltage
Collector to emitter saturation voltage
Gate to emitter cutoff voltage
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reveres transfer capacitance
Secondary breakdown energy
V(BR)GES
ICES
IGES
VCE(sat)1
VCE(sat)2
VGE(off)
td(on)
tr
td (off)
tf
Ciss
Coss
Cres
Es/b
±20
—
—
—
—
1.3
—
—
—
—
—
—
—
230
—
—
—
1.4
1.6
—
0.2
0.4
1.0
5
1110
75
18
—
—
100
±100
1.7
2.2
2.2
—
—
—
—
—
—
—
—
V
µA
µA
V
V
V
µs
µs
µs
µs
pF
pF
pF
mJ
IG = ±100 µA, VCE = 0 V
VCE = 300 V, VGE = 0 V
VGE = ±20 V, VCE = 0 V
IC = 8 A, VGE = 10 V
IC = 8 A, VGE = 4 V
IC = 1 mA, VCE = 10 V
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 2 of 7
VCE = 300 V, RL = 50 Ω,
VGE = 5 V, RG = 200 Ω
VCE = 10 V, VGE = 0,
f = 1 MHz
L = 5 mH
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
IC (A)
100
60
Collector Current
Collector Dissipation
Pc (W)
80
40
20
10
DC
PW
Op
er
=
10
on
m
s
1s
(T
c=
1
1m
s(
ati
10 µs
10
0
µs
ho
t)
25
°C
)
0.1
Ta = 25°C
0.01
0
0
50
100
150
Case Temperature
200
1
Tc (°C)
IC (A)
450
Collector Current
Collector to Emitter Breakdown Voltage
V(BR)CES (V)
10
400
350
IC = 2 mA
50
100
1000
6V
Pulse Test
4V
6
4
2
VGE = 2 V
0
12
8
25°C
-40°C
0
3
Gate to Emitter Voltage
4
5
VGE (V)
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 3 of 7
Collector to Emitter Saturation Voltage
VCE(sat) (V)
16
2
4
6
8
10
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
VCE = 10 V
Pulse Test
Tc = 125°C
2
Collector to Emitter Voltage VCE (V)
IC
(A)
300
8
Tc (°C)
20
Collector Current
10 V
15 V
150
Typical Transfer Characteristics
1
100
0
0
Case Temperature
0
30
Typical Output Characteristics
500
4
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Breakdown Voltage
vs. Case Temperature
300
-50
3
5
Pulse Test
4
3
IC = 10 A
2
1
0
8A
0
4
8
6A
12
Gate to Emitter Voltage
16
20
VGE (V)
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Typical Capacitance vs.
Collector to Emitter Voltage
10
10000
5
3000
Capacitance C (pF)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
-40°C
2
25°C
1
Tc = 125°C
0.5
0.2
VGE = 10 V
Pulse Test
0.1
0.1
Cies
1000
300
100
Coes
30
Cres
10
VGE = 0
f = 1 MHz
3
1
0.3
1
3
10
Collector Current
IC
30
100
0
(A)
12
30
8
20
10
4
VCE
0
20
40
60
Gate Charge
80
0
100
ISC (A)
Secondary breakdown Current
100
50
25°C
10
Tc = 140°C
2 VCC = 16 V
1
0.1
VGE = 10 V, Rg = 200 Ω
0.2
0.5
1
td(off)
0.3
tr
0.1
td(on)
0.03
2
5
Inductance Ratio L (mH)
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 4 of 7
VCC = 300 V, VGE = 10 V
Rg = 200 Ω, Ta = 25°C
0.2
0.5
1
2
Collector Current
Secondary Breakdown Current
vs. Inductance Ratio
5
tf
1
Qg (nc)
20
50
3
0.01
0.1
10
Secondary breakdown energy Es/b (mJ)
0
40
10
Switching Time t (µs)
16
VGE (V)
VGE
VCE = 16 V
Gate to Emitter Voltage
VCE (V)
Collector to Emitter Voltage
40
30
Switching Characteristics
20
IC = 10 A
Ta = 25°C
20
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics
50
10
5
10
IC (A)
Secondary Breakdown Energy
vs. Case Temperature
1000
500
200
100
50
20
10
25
VCC = 16 V, L = 5 mH
VGE = 10 V, Rg = 200 Ω
50
75
100
Case Temperature Tc (°C)
125
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
3
Tc = 25°C
1
0.3
D=1
0.5
0.2
0.1
0.1
0.05
0.03
0.02
0.01
0.05
t
ho
θch - c(t) = θs (t) • θch - c
θch - c = 2.08°C/W, Tc = 25°C
lse
pu
PDM
1s
D=
0.003
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit
Waveform
Ic Monitor
90%
R
Vin
Vin Monitor
10%
90%
Rg
D.U.T.
VCC
Ic
Vin = 10 V
10 %
10%
td(on)
tr
ton
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 5 of 7
90%
td(off)
tf
toff
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Package Dimensions
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
10.0
(1.5)
2.54 ± 0.5
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 6 of 7
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Ordering Information
Part Name
GN4014ZB4LD
GN4014ZB4LS
GN4014ZB4LM
Quantity
50 pcs.
1000 pcs.
1000 pcs.
REJ03G1249-0300 Rev.3.00 Jun 01, 2009
Page 7 of 7
Shipping Container
Sack
Taping
Taping
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2