RENESAS RJK6025DPD

Preliminary Datasheet
RJK6025DPD
600V - 1A - MOS FET
High Speed Power Switching
R07DS0676EJ0100
Rev.1.00
Feb 17, 2012
Features
 Low on-resistance
RDS(on) = 13.5  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)
 Low drive current
 High density mounting
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
D
4
1.
2.
3.
4.
G
12
3
Gate
Drain
Source
Drain
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
Pch Note2
ch-c
Tch
Ratings
600
30
1
2
1
2
29.7
4.2
150
Unit
V
V
A
A
A
A
W
C/W
C
Tstg
–55 to +150
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
Page 1 of 6
RJK6025DPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
600
—
—
3
—
Typ
—
—
—
—
13.5
Max
—
1
±0.1
5
17.5
Unit
V
A
A
V

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
37.5
7.5
0.9
30
14.5
48
77
5.0
0.7
3.3
0.85
—
—
—
—
—
—
—
—
—
—
1.45
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
230
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 0.5 A, VGS = 10 V Note3
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 0.2 A
VGS = 10 V
RL = 1500 
Rg = 10 
VDD = 480 V
VGS = 10 V
ID = 1.0 A
IF = 1.0 A, VGS = 0 Note3
IF = 0.4 A, VGS = 0
diF/dt = 100 A/s
Notes: 3. Pulse test
4. Since this device is equipped with high voltage FET chip (VDSS 600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
5. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
Page 2 of 6
RJK6025DPD
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
1.2
ID (A)
μs
=
Drain Current
10
1
PW
10
0
μs
Drain Current
ID (A)
10
Operation in this
area is limited by
RDS(on)
0.1
0.01
Tc = 25°C
1 shot
1
10
100
Drain to Source Voltage
Drain to Source on State Resistance
RDS(on) (Ω)
0.1
25°C
−25°C
0
2
4
6
8
Static Drain to Source on State Resistance
RDS(on) (Ω)
Gate to Source Voltage
5.6 V
0.6
5.4 V
0.4
5.2 V
5V
0.2
VGS = 4.8 V
0
4
10
VGS = 10 V
Pulse Test
40
ID = 0.8 A
20
0.2 A
0.4 A
10
0
25
50
75
Case Temperature
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
100 125 150
Tc (°C)
16
20
VDS (V)
VGS = 10 V
Ta = 25°C
Pulse Test
10
1
0.01
0.1
Drain Current
VGS (V)
1
ID (A)
Body-Drain Diode Reverse
Recovery Time (Typical)
50
0
-25
12
100
Static Drain to Source on State Resistance
vs. Temperature (Typical)
30
8
Drain to Source Voltage
Reverse Recovery Time trr (ns)
Drain Current
ID (A)
VDS = 10 V
Pulse Test
0.001
8, 10 V
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
1
Tc = 75°C
5.8 V
6V
0.8
VDS (V)
Typical Transfer Characteristics
0.01
1.0
0
1000
Ta = 25°C
Pulse Test
1000
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0.1
1
Reverse Drain Current
10
IDR (A)
Page 3 of 6
RJK6025DPD
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
10
Coss
Crss
1
0.1
0
50
100
150
200
Drain to Source Voltage
250
800
600
400
12
8
200
4
VDS = 480 V
300 V
100 V
0
0
300
VDS (V)
20
40
Gate Charge
60
80
0
100
Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
1.2
5
VGS = 0 V
Ta = 25°C
Pulse Test
1.0
Gate to Source Cutoff Voltage
VGS(off) (V)
IDR (A)
VDS = 480 V
300 V
100 V
VDS
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current
16
VGS
ID = 0.8 A
Ta = 25°C
Gate to Source Voltage
VDS (V)
VGS = 0
f = 1 MHz
Ta = 25°C
Drain to Source Voltage
Capacitance C (pF)
1000
VGS (V)
Dynamic Input Characteristics (Typical)
0.8
0.6
0.4
0.2
0
0
0.4
0.8
1.2
Source to Drain Voltage
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
1.6
2.0
VSD (V)
4
3
ID = 10 mA
1 mA
0.1 mA
2
1
VDS = 10 V
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJK6025DPD
Preliminary
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
2
Tc = 25°C
1
D=1
0.5
0.5
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.2°C/W, Tc = 25°C
0.05
0.02
0.01
0.2 1 shot pulse
PDM
D=
PW
T
PW
T
0.1
100 μ
10 m
1m
100 m
Pulse Width
1
10
100
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
10%
VDD
=2V
90%
td(on)
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
tr
90%
td(off)
tf
Page 5 of 6
RJK6025DPD
Preliminary
Package Dimensions
Previous Code
TMP3
0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
0.76
0.1 ± 0.1
1.4 ± 0.2
RENESAS Code
PRSS0004ZG-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Ordering Information
Orderable Part Number
RJK6025DPD-00#J2
R07DS0676EJ0100Rev.1.00
Feb 17, 2012
Quantity
3000 pcs
Shipping Container
Taping
Page 6 of 6
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Colophon 1.1