Preliminary Datasheet RJK60S8DPK-M0 600V - 110A - SJ MOS FET High Speed Power Switching R07DS0644EJ0100 Rev.1.00 Apr 23, 2012 Features Superjunction MOSFET Low on-resistance RDS(on) = 0.045 typ. (at ID = 27.5 A, VGS = 10 V, Ta = 25C) High speed switching tf = 42 ns typ. (at ID = 27.5 A, VGS = 10 V, RL = 10.9 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004ZH-A (Package name:TO-3PSG) D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Ta = 25C Ta = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID Note1 IDR (pulse) Note1 Pch Note2 ch-c Ratings 600 +30, 20 55 34.8 110 55 110 416.6 0.3 Unit V V A A A A A W C/W Tch Tstg 150 –55 to +150 C C ID (pulse)Note1 IDR Note1 Notes: 1. Limited by Tch max. 2. Value at Tc = 25C R07DS0644EJ0100Rev.1.00 Apr 23, 2012 Page 1 of 6 RJK60S8DPK-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage RDS(on) Min 600 — — 3 — — Typ — — — — 0.045 0.117 Max — 1 ±0.1 5 0.056 — Unit V mA A V Rg — 1.0 — f = 1 MHz VDS = 25 V, VGS = 0 V Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Ciss Coss Crss td(on) tr td(off) tf Qg Qgs — — — — — — — — — 5200 7000 23 46 50 123 42 82 31 — — — — — — — — — pF pF pF ns ns ns ns nC nC VDS = 25 V VGS = 0 f = 100 kHz Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Qgd VDF trr 22 1.0 540 28 — 1.6 — — nC V ns A 9.3 — C Static drain to source on state resistance Gate resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Body-drain diode reverse recovery current Irr — — — — Body-drain diode reverse recovery charge Qrr — Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = +30V, 20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 27.5 A, VGS = 10 V Note4 Ta = 150°C Note4 ID = 27.5 A, VGS = 10 V ID = 27.5 A VGS = 10 V RL = 10.9 Rg = 10 VDD = 480 V VGS = 10 V ID = 55 A IF = 55 A, VGS = 0 Note4 IF = 55 A VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0644EJ0100Rev.1.00 Apr 23, 2012 Page 2 of 6 RJK60S8DPK-M0 Preliminary Main Characteristics Channel Dissipation vs. Case Temperature Typical Output Characteristics 100 Ta = 25°C Pulse Test ID (A) 400 300 80 200 100 0 25 50 75 6V VGS = 5.5 V 20 100 125 150 175 Case Temperature Tc (°C) 0 7V 8 10 VDS (V) 80 VDS = 10 V Pulse Test 6.5 V 60 6V 40 5.5 V 20 VGS = 5 V 0 Drain Current ID (A) 8V 10 V 15 V 10 Tc = 75°C 1 25°C −25°C 0.1 0.01 2 4 6 8 Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) 1 VGS = 10 V Pulse Test Ta = 125°C 0.1 25°C 0.01 1 10 Drain Current R07DS0644EJ0100Rev.1.00 Apr 23, 2012 0 10 100 ID (A) 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS(on) (Ω) ID (A) 6 100 Ta = 125°C Pulse Test Drain Current 4 Typical Transfer Characteristics 100 Drain to Source on State Resistance RDS(on) (Ω) 2 Drain to Source Voltage Typical Output Characteristics 0 6.5 V 40 0 0 7V 8V 10 V 15 V 60 Drain Current Channel Dissipation Pch (W) 500 Static Drain to Source on State Resistance vs. Temperature (Typical) 0.16 VGS = 10 V Pulse Test 0.12 27.5 A ID = 55 A 0.08 10 A 0.04 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 3 of 6 RJK60S8DPK-M0 Preliminary Typical Capacitance vs. Drain to Source Voltage 100000 10 di/dt = 100 A/μs VGS = 0, Ta = 25°C Ciss 10000 Capacitance C (pF) 1 1000 Coss 100 10 Crss 1 0.1 0.1 10 0 100 VDS (V) 16 Drain to Source Voltage EOSS (μJ) 12 8 4 0 100 150 200 Drain to Source Voltage 250 300 800 200 250 300 VDS (V) 16 ID = 55 A Ta = 25°C VGS 600 12 VDD = 480 V 300 V 100 V VDS 400 200 0 0 VDS (V) 40 8 4 VDD = 480 V 300 V 100 V 80 Gate Charge Reverse Drain Current vs. Source to Drain Voltage (Typical) 120 0 160 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 6 Gate to Source Cutoff Voltage VGS(off) (V) IDR (A) 100 Reverse Drain Current 150 Dynamic Input Characteristics (Typical) COSS Stored Energy (Typical) 50 100 Drain to Source Voltage Reverse Drain Current IDR (A) 0 50 VGS (V) 1 VGS = 0 f = 100 kHz Ta = 25°C Gate to Source Voltage Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time (Typical) Ta = 125°C 25°C 10 VGS = 0 Pulse Test 1 0 0.4 0.8 Source to Drain Voltage R07DS0644EJ0100Rev.1.00 Apr 23, 2012 1.2 1.6 VSD (V) 5 ID = 10 mA 4 3 1 mA 0.1 mA 2 1 VDS = 10 V 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK60S8DPK-M0 Preliminary Drain to Source Breakdown Voltage V(BR)DSS (V) Drain to Source Breakdown Voltage vs. Case Temperature (Typical) 800 700 600 500 ID = 10 mA VGS = 0 400 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V Vin Vout 10% 10% 10% VDD = 300 V 90% td(on) R07DS0644EJ0100Rev.1.00 Apr 23, 2012 tr 90% td(off) tf Page 5 of 6 RJK60S8DPK-M0 Preliminary JEITA Package Code ⎯ RENESAS Code PRSS0004ZH-A Previous Code TO-3PSG/TO-3PSGV 15.60 ± 0.2 13.60 MASS[Typ.] 3.7g Unit: mm 4.80 ± 0.2 0.60 ± 0.2 φ3.2 ± 0.2 20.0 ± 0.2 2.0 2.4 0.50typ 18.70 ± 0.2 1.0 3.50 14.90 ± 0.1 3.8 Package Name TO-3PSG 5.00 ± 0.3 Package Dimension 1.40 3-1.00 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 0.60 ± 0.1 1.50 ± 0.2 2.825 ± 0.15 Ordering Information Orderable Part Number RJK60S8DPK-M0#T0 R07DS0644EJ0100Rev.1.00 Apr 23, 2012 Quantity 360 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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