MCH6437 Power MOSFET 20V, 24mΩ, 7A, Single N-Channel Features • Low On-Resistance • 1.8V Drive • ESD Diode-Protected Gate • Pb-Free and RoHS Compliance www.onsemi.com VDSS RDS(on) Max 24mΩ@ 4.5V ID Max 20V 35mΩ@ 2.5V 7A 65mΩ@ 1.8V Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Unit Value Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 7 A IDP 28 A PD 1.5 W 150 °C −55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% 1, 2, 5, 6 3 Power Dissipation When mounted on ceramic substrate 4 (1200mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg Packing Type : TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Marking Thermal Resistance Ratings Value Unit ZL LOT No. Symbol LOT No. Parameter Junction to Ambient When mounted on ceramic substrate 2 RθJA 83.3 °C/W TL (1200mm × 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : MCH6437/D MCH6437 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 μA Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.3 V Forward Transconductance gFS VDS=10V, ID=4A 6.2 RDS(on)1 ID=4A, VGS=4.5V 18 24 mΩ RDS(on)2 ID=2A, VGS=2.5V 25 35 mΩ RDS(on)3 ID=1A, VGS=1.8V 38 65 mΩ 660 pF VDS=10V, f=1MHz 125 pF Static Drain to Source On-State Resistance 20 V 0.4 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 100 pF Turn-ON Delay Time td(on) 9.7 ns Rise Time tr 53 ns Turn-OFF Delay Time td(off) 72 ns Fall Time tf 65 ns Total Gate Charge Qg 8.4 nC Gate to Source Charge Qgs 1.0 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD See specified Test Circuit VDS=10V, VGS=4.5V, ID=7A 2.4 IS=7A, VGS=0V 0.81 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=10V 4.5V 0V VIN PW=10μs D.C.≤1% ID=4A RL=2.5Ω VIN VOUT D G P.G 50Ω S MCH6437 www.onsemi.com 2 MCH6437 www.onsemi.com 3 MCH6437 www.onsemi.com 4 MCH6437 Package Dimensions MCH6437-TL-E / MCH6437-TL-W MCPH6 CASE 419AS ISSUE O unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH6437-TL-E MCH6437-TL-W Shipping Package MCPH6 SC-88FL,SC-70-6,SOT-363 Note Pb-Free 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6437 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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