CPH6347 Power MOSFET –20V, 39mΩ, –6A, Single P-Channel Features • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance www.onsemi.com VDSS RDS(on) Max 39mΩ@ −4.5V ID Max −20V 66mΩ@ −2.5V −6A 102mΩ@ −1.8V Specifications Electrical Connection Absolute Maximum Ratings at Ta = 25°C Parameter Symbol P-Channel Unit Value VDSS −20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID −6 A IDP −24 A PD 1.6 W 150 °C −55 to +150 °C Drain to Source Voltage Drain Current (Pulse) PW≤10μs, duty cycle≤1% 1, 2, 5, 6 3 Power Dissipation When mounted on ceramic substrate 4 (900mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg Packing Type : TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Marking Symbol Value Unit YZ Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) RθJA 78.1 °C/W LOT No. Thermal Resistance Ratings TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2 1 Publication Order Number : CPH6347/D CPH6347 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ max −20 Unit Drain to Source Breakdown Voltage V(BR)DSS ID=−1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=−20V, VGS=0V −1 μA Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=−10V, ID=−1mA −1.4 V Forward Transconductance gFS VDS=−10V, ID=−3A RDS(on)1 ID=−3A, VGS=−4.5V 30 RDS(on)2 ID=−1.5A, VGS=−2.5V 44 66 mΩ RDS(on)3 ID=−0.6A, VGS=−1.8V 68 102 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD V −0.4 4.3 7.3 S 39 mΩ 860 pF 170 pF Crss 130 pF td(on) 10 ns tr 48 ns 100 ns VDS=−10V, f=1MHz See specified Test Circuit VDS=−10V, VGS=−4.5V, ID=−6A 78 ns 10.5 nC 2.0 nC 3.0 IS=−6A, VGS=0V −0.82 nC −1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --4.5V VDD= --10V VIN ID= --3A RL=3.3Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω S CPH6347 www.onsemi.com 2 CPH6347 www.onsemi.com 3 CPH6347 www.onsemi.com 4 CPH6347 Package Dimensions CPH6347-TL-H / CPH6347-TL-W CPH6 CASE 318BD ISSUE O Unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.4 1.4 0.6 0.95 0.95 ORDERING INFORMATION Device CPH6347-TL-H CPH6347-TL-W Package CPH6 SC-74,SOT-26,SOT-457 Shipping Note 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the CPH6347 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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