MCH3476 Power MOSFET 20V, 125mΩ, 2A, Single N-Channel Features • Low On-Resistance • 1.8V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance www.onsemi.com VDSS RDS(on) Max 125mΩ@ 4.5V ID Max 20V 190mΩ@ 2.5V 2A 310mΩ@ 1.8V Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Unit Value Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 2 A IDP 8 A PD 0.8 W 150 °C −55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% 3 1 1 : Gate 2 : Source 3 : Drain Power Dissipation When mounted on ceramic substrate 2 (900mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg Packing Type : TL Symbol Value Unit FH LOT No. Parameter LOT No. Thermal Resistance Ratings Marking Junction to Ambient When mounted on ceramic substrate 2 RθJA 156.2 (900mm × 0.8mm) °C/W TL FH : Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2 1 Publication Order Number : MCH3476/D MCH3476 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ Unit max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 μA Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.3 V Forward Transconductance gFS VDS=10V, ID=1A 1.9 RDS(on)1 ID=1A, VGS=4.5V 93 125 mΩ RDS(on)2 ID=0.5A, VGS=2.5V 135 190 mΩ RDS(on)3 ID=0.3A, VGS=1.8V 200 310 mΩ Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 20 V 0.4 S 128 pF 28 pF Crss 21 pF Turn-ON Delay Time td(on) 5.1 ns Rise Time tr 11 ns Turn-OFF Delay Time td(off) 14.5 ns Fall Time tf 12 ns Total Gate Charge Qg 1.8 nC Gate to Source Charge Qgs 0.3 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=2A 0.55 IS=2A, VGS=0V 0.85 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1A RL=10Ω VIN D VOUT PW=10μs D.C.≤1% G MCH3476 P.G 50Ω S www.onsemi.com 2 MCH3476 www.onsemi.com 3 MCH3476 www.onsemi.com 4 MCH3476 Package Dimensions MCH3476-TL-H / MCH3476-TL-W MCPH3 CASE 419AQ ISSUE O unit : mm 1 : Gate 2 : Source 3 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH3476-TL-H MCH3476-TL-W Package Shipping Note MCPH3 SC-70FL, SOT-323 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3476 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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