MCH3375 Power MOSFET www.onsemi.com –30V, 295mΩ, –1.6A, Single P-Channel Features VDSS • On-Resistance RDS(on)1=227mΩ (typ) • 4V Drive • High Speed Switching and Low Loss • Pb-Free, Halogen Free and RoHS Compliance Electrical Connection VDSS –30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID –1.6 A IDP –6.4 A PW≤10μs, duty cycle≤1% P-Channel Unit Value Drain to Source Voltage Drain Current (Pulse) 3 1 Power Dissipation When mounted on ceramic substrate PD 0.8 W 150 °C −55 to +150 °C 2 (900mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Packing Type : TL Value Unit Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Marking QG LOT No. Symbol 1 : Gate 2 : Source 3 : Drain LOT No. Thermal Resistance Ratings Parameter –1.6A 609mΩ@ –4V Absolute Maximum Ratings at Ta = 25°C Symbol ID Max 523mΩ@ –4.5V –30V Specifications Parameter RDS(on) Max 295mΩ@ –10V TL RθJA 156.25 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February 2015 - Rev. 2 1 Publication Order Number : MCH3375/D MCH3375 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=–1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=–30V, VGS=0V –1 μA Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=–10V, ID=–1mA –2.6 V Forward Transconductance gFS VDS=–10V, ID=–0.8A 1.3 RDS(on)1 ID=–0.8A, VGS=–10V 227 295 mΩ RDS(on)2 ID=–0.4A, VGS=–4.5V 374 523 mΩ RDS(on)3 ID=–0.4A, VGS=–4V 435 609 mΩ VDS=–10V, f=1MHz 22 pF pF Static Drain to Source On-State Resistance –30 Unit V –1.2 S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 16 Turn-ON Delay Time td(on) 4.0 ns Rise Time tr 3.3 ns Turn-OFF Delay Time td(off) 12 ns Fall Time tf 5.4 ns Total Gate Charge Qg 2.2 nC Gate to Source Charge Qgs 0.36 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD 82 See specified Test Circuit VDS=–15V, VGS=–10V, ID=–1.6A pF 0.49 IS=–1.6A, VGS=0V –0.9 nC −1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --0.8A RL=18.75Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω MCH3375 S www.onsemi.com 2 MCH3375 www.onsemi.com 3 MCH3375 www.onsemi.com 4 MCH3375 Package Dimensions MCH3375-TL-H / MCH3375-TL-W MCPH3 CASE 419AQ ISSUE O Unit : mm 1 : Gate 2 : Source 3 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH3375-TL-H MCH3375-TL-W Package Shipping Note MCPH3 SC-70,SOT-323 3,000 pcs. / reel Pb-Free and Halogen Free Note on usage : Since the MCH3375 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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