To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR N0300N N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The N0300N is a switching device which can be driven directly by 0.4 +0.1 –0.05 0.65 –0.15 a 4.5 V power source. FEATURES 3 1.5 2.8 ±0.2 switching characteristics, and is suitable for applications such as power switch of portable machine and so on. +0.1 –0.06 +0.1 The device features a low on-state resistance and excellent 0.16 0 to 0.1 1 2 • 4.5 V drive available • Low on-state resistance 0.95 RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 83 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) 0.65 0.95 1.9 2.9 ±0.2 • Built-in gate protection diode 0.9 to 1.1 1. Gate 2. Source 3. Drain ORDERING INFORMATION PART NUMBER N0300N-T1B-AT PACKAGE Note SC-96 (Mini Mold Thin Type) Note Pb-free (This product does not contain Pb in the external electrode and other parts.) Marking: XY ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS EQUIVALENT CIRCUIT 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Note1 Drain Current (pulse) ID(DC) ±4.5 A ID(pulse) PT1 ±18 0.2 A W PT2 1.25 W Total Power Dissipation Note2 Total Power Dissipation Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19781EJ1V0DS00 (1st edition) Date Published April 2009 NS Printed in Japan 2009 N0300N ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 μA VGS(off) VDS = 10 V, ID = 1.0 mA 1.0 2.5 V | yfs | VDS = 10 V, ID = 2.0 A 1.0 RDS(on)1 VGS = 10 V, ID = 2.0 A 38 50 mΩ RDS(on)2 VGS = 4.5 V, ID = 2.0 A 48 83 mΩ Input Capacitance Ciss VDS = 10 V, 350 pF Output Capacitance Coss VGS = 0 V, 65 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 30 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 2.0 A, 6.5 ns Rise Time tr VGS = 10 V, 3.0 ns Turn-off Delay Time td(off) RG = 6 Ω 16.5 ns Fall Time tf 3.0 ns Gate to Source Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Total Gate Charge Body Diode Forward Voltage Note QG VDD = 24 V, VGS = 10 V, ID = 4.5 A 7.4 nC VF(S-D) IF = 4.5 A, VGS = 0 V 0.9 V Note Pulsed TEST CIRCUIT SWITCHING TIME D.U.T. RL RG PG. VGS VGS Wave Form 0 90% VDD 90% 90% ID ID 0 10% 10% Wave Form τ τ = 1 μs Duty Cycle ≤ 1% 2 VGS 10% ID VGS 0 S td(on) tr ton td(off) tf toff Data Sheet D19781EJ1V0DS N0300N TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.5 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt 1.25 1 0.75 0.5 0.25 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA d it e Lim V ) 5 . =4 R ID(DC) (V ID(pulse) PW n) (o DS GS 10 =1 i 00 1 μs 1 ms 10 ms 0.1 100 ms Single Pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt 5s 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A 100 Without board 100 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt 10 Single Pulse 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D19781EJ1V0DS 3 N0300N DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 10 18 10 V 14 12 VGS = 4.5 V 10 8 6 4 TA = 125°C 75°C 25°C −25°C 0.1 0.01 0.001 2 VDS = 10 V Pulsed Pulsed 0 0.0001 0 0.4 0.8 1.2 1.6 0 2 1 4 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 VDS = 10 V ID = 1.0 mA 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 10 TA = −25°C 25°C 1 75°C 125°C 0.1 VDS = 10 V Pulsed 0.01 0.001 Pulsed 100 80 VGS = 4.5 V 40 10 V 20 0 0.1 1 10 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 RDS(on) - Drain to Source On-state Resistance - mΩ 120 60 0.01 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 3 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C ID - Drain Current - A 4 2 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 1 ID - Drain Current - A ID - Drain Current - A 16 200 ID = 2.0 A Pulsed 180 160 140 120 100 80 60 40 20 0 0 4 8 12 VGS - Gate to Source Voltage - V Data Sheet D19781EJ1V0DS 16 N0300N CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 120 100 VGS = 4.5 V 60 10 V 40 20 ID = 2.0 A Pulsed 0 -50 -25 0 25 50 Ciss Coss 100 Crss VGS = 0 V f = 1.0 MHz 10 0.01 75 100 125 150 175 Tch - Channel Temperature - °C 1 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 25 VDD = 15 V VGS = 10 V RG = 6 Ω td(off) 10 td(on) tr tf VDS - Drain to Source Voltage - V 100 td(on), tr, td(off), tf - Switching Time - ns 0.1 1 10 VDD = 24 V 15 V 6V 20 8 15 6 10 4 VGS 5 2 VDS ID = 4.5 A 0 0.1 1 10 100 ID - Drain Current - A 0 0 1 2 3 4 5 6 7 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 100 10 1 0.1 0.01 0.001 VGS = 0 V Pulsed 0.0001 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V Data Sheet D19781EJ1V0DS 5 VGS - Gate to Source Voltage - V 80 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE N0300N • The information in this document is current as of April, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1