PA2718GR

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2718GR
SWITCHING
P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The µ PA2718GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
8
5
1, 2, 3
: Source
4
: Gate
5, 6, 7, 8 : Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 9.0 mΩ MAX. (VGS = −10 V, ID = −6.5 A)
RDS(on)2 = 14.5 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)
• Low Ciss: Ciss = 2810 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA2718GR
Power SOP8
6.0 ±0.3
4
4.4
5.37 MAX.
0.8
0.15
+0.10
–0.05
1.44
0.05 MIN.
1.8 MAX.
1
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
–30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC)
ID(DC)
m13
A
Drain Current (pulse)
Note1
ID(pulse)
m130
A
Total Power Dissipation
Note2
PT1
2
W
Total Power Dissipation
Note3
PT2
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note4
IAS
−13
A
Single Avalanche Energy
Note4
EAS
16.9
mJ
Notes 1.
2.
3.
4.
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
PW ≤ 10 µs, Duty Cycle ≤ 1%
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
Starting Tch = 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16952EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004
µ PA2718GR
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V
–1
µA
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m10
µA
–2.5
V
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
VGS(off)
VDS = −10 V, ID = −1 mA
–1.0
| yfs |
VDS = −10 V, ID = −6.5 A
9
RDS(on)1
VGS = −10 V, ID = −6.5 A
7.2
9.0
mΩ
RDS(on)2
VGS = −4.5 V, ID = −6.5 A
9.9
14.5
mΩ
RDS(on)3
VGS = −4.0 V, ID = −6.5 A
11.8
18.2
mΩ
S
Input Capacitance
Ciss
VDS = −10 V
2810
pF
Output Capacitance
Coss
VGS = 0 V
710
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
460
pF
Turn-on Delay Time
td(on)
VDD = −15 V, ID = −6.5 A
13
ns
VGS = −10 V
18
ns
RG = 10 Ω
510
ns
310
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = −24 V
67
nC
Gate to Source Charge
QGS
VGS = −10 V
6.5
nC
QGD
ID = −13 A
19
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)
IF = 13 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 13 A, VGS = 0 V
180
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/µs
14
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
50 Ω
PG.
VGS = −20 → 0 V
VDD
RG
PG.
VGS(−)
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS(−)
−
IAS
BVDSS
VDS
ID
VGS(−)
0
VDS
Wave Form
τ
VDD
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
2
IG = −2 mA
RL
50 Ω
VDD
Data Sheet G16952EJ1V0DS
VDS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
µ PA2718GR
ELECTRICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
2.8
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
Mounted on ceramic
substrate of
1200 mm2 x 2.2 mm
2.4
2
1.6
1.2
0.8
0.4
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-1000
PW = 100 µs
RDS(on)Limited
(at VGS = −10 V)
ID(DC)
-10
1 ms
DC
10 ms
-1
Power Dissipation Limited
-0.1
TA = 25°C
Single pulse
Mounted on ceramic substrate of
100ms
2
1200 mm x 2.2 mm
-0.01
-0.01
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(pulse)
-100
1000
Rth(ch-A)2
100
Rth(ch-A)1
10
1
Single pulse, TA = 25°C
Rth(ch-A)1 : Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Rth(ch-A)2 : Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
0.1
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
Data Sheet G16952EJ1V0DS
10
100
1000
3
µ PA2718GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-150
VDS = −10 V
Pulsed
−4.5 V
VGS = −10 V
ID - Drain Current - A
ID - Drain Current - A
-100
Pulsed
-125
FORWARD TRANSFER CHARACTERISTICS
-100
−4 V
-75
-50
-10
TA = 150°C
75°C
25°C
−40°C
-1
-0.1
-25
-0.01
0
0
-0.5
-1
-1.5
0
-2
-1
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
VDS = −10 V
ID = −1 mA
-1.5
-1.0
-0.5
0
0
50
100
150
V DS = −10 V
Pulsed
-10
TA = 150°C
75°C
25°C
−40°C
-1
-0.1
-0.1
Pulsed
30
V GS = −10 V
−4.5 V
−4 V
10
0
-100
-1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
40
-10
-10
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
ID = −6.5 A
30
20
10
ID - Drain Current - A
4
-1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-1
-5
-100
Tch - Channel Temperature - °C
20
-4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-2.5
-50
-3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
-2.0
-2
0
0
-5
-10
-15
VGS - Gate to Source Voltage - V
Data Sheet G16952EJ1V0DS
-20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
20
10000
Ciss, Coss, Crss - Capacitance - pF
VGS = −10 V
−4.5 V
−4 V
15
10
5
ID = −6.5 A
Pulsed
Ciss
1000
Coss
Crss
100
VGS = 0 V
f = 1 MHz
0
-50
0
50
100
10
-0.1
150
Tch - Channel Temperature - °C
-100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10000
-15
-30
VDD = −15 V
VGS = −10 V
RG = 10 Ω
1000
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
-10
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(off)
tf
100
tr
td(on)
10
1
-0.1
ID = −13 A
VDD = −24 V
−15 V
−6 V
-20
-10
-5
-10
VGS
VDS
0
0
-1
-10
-100
0
ID - Drain Current - A
20
40
60
80
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
1000
Pulsed
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
-1
100
V GS = −10 V
10
0V
1
0.1
0.01
VGS = 0 V
di/dt = 50 A/µs
100
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet G16952EJ1V0DS
5
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA2718GR
µ PA2718GR
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
Energy Derating Factor - %
IAS - Single Avalanche Current - A
-100
IAS = −13 A
-10
-1
EAS = 16.9 mJ
VDD = −15 V
VGS = −20 → 0 V
RG = 25 Ω
Starting Tch = 25°C
80
60
40
20
-0.1
10 m
0
100 m
1
10
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - H
6
VDD = −15 V
RG = 25 Ω
VGS = −20 → 0 V
IAS ≤ −13 A
100
Data Sheet G16952EJ1V0DS
µ PA2718GR
• The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1