2SK3984 DS - Renesas Electronics

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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3984
SWITCHING
N-CHANNEL POWER MOSFET
ORDERING INFORMATION
DESCRIPTION
The 2SK3984 is N-channel MOS Field Effect Transistor
designed for high speed switching applications such as
class-D amplifier.
PART NUMBER
PACKAGE
2SK3984-ZK
TO-252 (MP-3ZK)
FEATURES
• Super low on-state resistance
RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A)
(TO-252)
RDS(on) = 85 mΩ MAX. (VGS = 10 V, ID = 9 A)
• Low Ciss: Ciss = 750 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±18
A
ID(pulse)
±45
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Tstg
−55 to +150
°C
EAS
10
mJ
IAR
10
A
EAR
10
mJ
Drain Current (pulse)
Note1
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
Note3
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
125
°C/W
Channel to Ambient Thermal Resistance Rth(ch-A)
4.17
°C/W
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17323EJ2V0DS00 (2nd edition)
Date Published April 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004
2SK3984
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
VGS(off)
VDS = 10 V, ID = 1 mA
4.5
5.5
6.5
V
| yfs |
VDS = 10 V, ID = 9 A
2.5
5.8
RDS(on)
VGS = 10 V, ID = 9 A
71
Ciss
VDS = 10 V
750
pF
Coss
VGS = 0 V
120
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
40
pF
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 9 A
15
ns
tr
VGS = 10 V
6
ns
td(off)
RG = 10 Ω
17
ns
5
ns
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
Input Capacitance
Output Capacitance
Rise Time
Turn-off Delay Time
Fall Time
tf
S
85
mΩ
Total Gate Charge
QG
VDD = 50 V
13
nC
Gate to Source Charge
QGS
VGS = 10 V
5.5
nC
QGD
ID = 18 A
4
nC
Gate to Drain Charge
Body Diode Forward Voltage
<R>
TEST CONDITIONS
Note
VF(S-D)
IF = 18 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 18 A, VGS = 0 V
56
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
146
nC
1.5
V
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
VDS
ID
Starting Tch
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
PG.
2
50 Ω
10%
0
10%
Wave Form
VDD
D.U.T.
IG = 2 mA
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D17323EJ2V0DS
td(on)
tr
ton
td(off)
tf
toff
2SK3984
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
120
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
40
30
20
10
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse) = 36 A
ID(pulse) = 45 A
PW = 10μs
100μs
500μs
1ms
10ms
RDS(on) Limited
(at VGS = 10 V)
1
Power Dissipation Limited
0.1
TC = 25°C
Single Pulse
0.01
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
ID(DC) = 18 A
10
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 4.17°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Data Sheet D17323EJ2V0DS
100
1000
3
2SK3984
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
50
Tch = 150°C
125°C
75°C
25°C
− 25°C
− 40°C
10
40
ID - Drain Current - A
ID - Drain Current - A
45
VGS = 10 V
35
30
25
20
15
10
1
0.1
0.01
VDS = 10 V
Pulsed
0.001
5
Pulse
d
0
0
1
2
3
4
5
6
7
8
9
0.0001
10
0
1
VDS - Drain to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V
ID = 1 mA
6
5
4
3
2
0
25
50
200
180
160
140
120
100
V GS = 10 V
60
40
100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
Pulsed
10
8
9
10
Tch = − 40°C
− 25°C
25°C
75°C
125°C
150°C
1
0.1
0.1
1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
140
Pulsed
120
100
ID - Drain Current - A
4
7
ID - Drain Current - A
240
1
6
VDS = 10 V
Pulsed
0.01
0.01
75 100 125 150 175
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
80
5
10
Tch - Channel Temperature - °C
220
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
8
-50 -25
3
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
7
2
80
ID = 9 A
ID = 5 A
60
40
20
0
4
6
8
10
12
14
16
18
VGS - Gate to Source Voltage - V
Data Sheet D17323EJ2V0DS
20
2SK3984
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
180
10000
ID = 9 A
160 Pulsed
Ciss, Coss, Crss - Capacitance - pF
140
120
VGS = 10 V
100
80
60
40
Ciss
1000
Coss
100
Crss
10
VGS = 0 V
f = 1 MHz
20
1
-50 -25
0
25
50
75 100 125 150 175
0.1
Tch - Channel Temperature - °C
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
120
1000
VGS = 10 V
VDD = 50 V
RG = 0 Ω
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
10
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
tf
tr
V DD = 80 V
50 V
20 V
100
10
8
80
V GS
60
6
40
4
20
2
V DS
ID = 18 A
0
0
1
0.1
1
10
0
100
5
10
15
20
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
100
trr - Reverse Recovery Time - ns
1000
IF - Diode Forward Current - A
1
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
<R>
VGS = 10 V
4.5 V
0V
10
1
0.1
di / dt = 100 A/μs
VGS = 0 V
Pulsed
10
0.01
0
0.5
1
1.5
0.1
1
10
100
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D17323EJ2V0DS
5
2SK3984
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
IAS - Single Avalanche Current - A
1000
VDD = 50 V
RG = 25 Ω
VGS = −20 → 0 V
Starting Tch = 25°C
100
IAS = 10 A
EAS = 10 mJ
10
1
10 μ
100 μ
1m
10 m
L - Inductive Load - H
6
Data Sheet D17323EJ2V0DS
2SK3984
PACKAGE DRAWINGS (Unit: mm)
TO-252 (MP-3ZK)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
3
1.14 MAX.
0.51 MIN.
2
0.8
1
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D17323EJ2V0DS
7
2SK3984
• The information in this document is current as of April, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1