To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. “Standard”: 8. 9. 10. 11. 12. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3984 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier. PART NUMBER PACKAGE 2SK3984-ZK TO-252 (MP-3ZK) FEATURES • Super low on-state resistance RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A) (TO-252) RDS(on) = 85 mΩ MAX. (VGS = 10 V, ID = 9 A) • Low Ciss: Ciss = 750 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±18 A ID(pulse) ±45 A Total Power Dissipation (TC = 25°C) PT1 30 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C EAS 10 mJ IAR 10 A EAR 10 mJ Drain Current (pulse) Note1 Storage Temperature Single Avalanche Energy Note2 Repetitive Avalanche Current Note3 Repetitive Avalanche Energy Note3 THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 125 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 4.17 °C/W Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch(peak) ≤ 150°C, RG = 25 Ω The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17323EJ2V0DS00 (2nd edition) Date Published April 2006 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2004 2SK3984 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 μA VGS(off) VDS = 10 V, ID = 1 mA 4.5 5.5 6.5 V | yfs | VDS = 10 V, ID = 9 A 2.5 5.8 RDS(on) VGS = 10 V, ID = 9 A 71 Ciss VDS = 10 V 750 pF Coss VGS = 0 V 120 pF Reverse Transfer Capacitance Crss f = 1 MHz 40 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 9 A 15 ns tr VGS = 10 V 6 ns td(off) RG = 10 Ω 17 ns 5 ns Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Rise Time Turn-off Delay Time Fall Time tf S 85 mΩ Total Gate Charge QG VDD = 50 V 13 nC Gate to Source Charge QGS VGS = 10 V 5.5 nC QGD ID = 18 A 4 nC Gate to Drain Charge Body Diode Forward Voltage <R> TEST CONDITIONS Note VF(S-D) IF = 18 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 18 A, VGS = 0 V 56 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 146 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% IAS VDS VDS ID Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 BVDSS RL VDD Data Sheet D17323EJ2V0DS td(on) tr ton td(off) tf toff 2SK3984 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) = 36 A ID(pulse) = 45 A PW = 10μs 100μs 500μs 1ms 10ms RDS(on) Limited (at VGS = 10 V) 1 Power Dissipation Limited 0.1 TC = 25°C Single Pulse 0.01 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) = 18 A 10 Rth(ch-A) = 125°C/W 100 10 Rth(ch-C) = 4.17°C/W 1 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 PW - Pulse Width - s Data Sheet D17323EJ2V0DS 100 1000 3 2SK3984 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 50 Tch = 150°C 125°C 75°C 25°C − 25°C − 40°C 10 40 ID - Drain Current - A ID - Drain Current - A 45 VGS = 10 V 35 30 25 20 15 10 1 0.1 0.01 VDS = 10 V Pulsed 0.001 5 Pulse d 0 0 1 2 3 4 5 6 7 8 9 0.0001 10 0 1 VDS - Drain to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA 6 5 4 3 2 0 25 50 200 180 160 140 120 100 V GS = 10 V 60 40 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 10 8 9 10 Tch = − 40°C − 25°C 25°C 75°C 125°C 150°C 1 0.1 0.1 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 Pulsed 120 100 ID - Drain Current - A 4 7 ID - Drain Current - A 240 1 6 VDS = 10 V Pulsed 0.01 0.01 75 100 125 150 175 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 5 10 Tch - Channel Temperature - °C 220 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 8 -50 -25 3 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 7 2 80 ID = 9 A ID = 5 A 60 40 20 0 4 6 8 10 12 14 16 18 VGS - Gate to Source Voltage - V Data Sheet D17323EJ2V0DS 20 2SK3984 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 180 10000 ID = 9 A 160 Pulsed Ciss, Coss, Crss - Capacitance - pF 140 120 VGS = 10 V 100 80 60 40 Ciss 1000 Coss 100 Crss 10 VGS = 0 V f = 1 MHz 20 1 -50 -25 0 25 50 75 100 125 150 175 0.1 Tch - Channel Temperature - °C 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 120 1000 VGS = 10 V VDD = 50 V RG = 0 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 td(off) td(on) 10 tf tr V DD = 80 V 50 V 20 V 100 10 8 80 V GS 60 6 40 4 20 2 V DS ID = 18 A 0 0 1 0.1 1 10 0 100 5 10 15 20 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 100 trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 1 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ <R> VGS = 10 V 4.5 V 0V 10 1 0.1 di / dt = 100 A/μs VGS = 0 V Pulsed 10 0.01 0 0.5 1 1.5 0.1 1 10 100 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D17323EJ2V0DS 5 2SK3984 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS - Single Avalanche Current - A 1000 VDD = 50 V RG = 25 Ω VGS = −20 → 0 V Starting Tch = 25°C 100 IAS = 10 A EAS = 10 mJ 10 1 10 μ 100 μ 1m 10 m L - Inductive Load - H 6 Data Sheet D17323EJ2V0DS 2SK3984 PACKAGE DRAWINGS (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 3 1.14 MAX. 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D17323EJ2V0DS 7 2SK3984 • The information in this document is current as of April, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1