MCH6448 Power MOSFET 20V, 22mΩ, 8A, Single N-Channel www.onsemi.com VDSS Features • Low On-Resistance • 1.2V Drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS Compliance RDS(on) Max 22mΩ@ 4.5V 28mΩ@ 2.5V 20V Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Unit Value Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±9 V Drain Current (DC) ID 8 A IDP 32 A PD 1.5 W 150 °C −55 to +150 °C PW≤10μs, duty cycle≤1% 1, 2, 5, 6 3 Power Dissipation When mounted on ceramic substrate 8A 39mΩ@ 1.8V 124mΩ@ 1.2V Specifications Drain Current (Pulse) ID Max 4 (1200mm2 × 0.8mm) Junction Temperature Tj Storage Temperature Tstg Packing Type : TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Marking Thermal Resistance Ratings Value Unit ZX LOT No. Symbol LOT No. Parameter Junction to Ambient When mounted on ceramic substrate 2 RθJA 83.3 °C/W TL (1200mm × 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 1 1 Publication Order Number : MCH6448/D MCH6448 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min typ Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Gate to Source Leakage Current IGSS VGS=±7.2V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=10V, ID=4A 7.7 RDS(on)1 ID=4A, VGS=4.5V RDS(on)2 RDS(on)3 RDS(on)4 ID=0.5A, VGS=1.2V Static Drain to Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD Unit max 20 V 1 μA ±10 μA 1.0 V 17 22 mΩ ID=2A, VGS=2.5V 20 28 mΩ ID=1A, VGS=1.8V 26 39 mΩ 62 124 mΩ VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=4.5V, ID=8A 0.3 S 705 pF 150 pF 125 pF 6 ns 47 ns 103 ns 81 ns 11.2 nC 1.3 nC 2.8 IS=8A, VGS=0V 0.8 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=4A RL=2.5Ω VIN D PW=10μs D.C.≤1% VOUT G P.G 50Ω MCH6448 S www.onsemi.com 2 MCH6448 www.onsemi.com 3 MCH6448 www.onsemi.com 4 MCH6448 Package Dimensions MCH6448-TL-H / MCH6448-TL-W MCPH6 CASE 419AS ISSUE O unit : mm 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH6448-TL-H MCH6448-TL-W Package Shipping Note MCPH6 SC-88FL,SC-70-6,SOT-363 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH6448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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