Ordering number : EN1334F 2SC3332 Bipolar Transistor 160V, 0.7A, Low VCE(sat) NPN Single NP http://onsemi.com Features • • • • Hgih breakdown voltage Excellent hFE linearity Wide SOA and highly resistant to breakdown Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings 180 160 V VEBO IC 6 V 0.7 A ICP PC Collector Dissipation Unit VCBO VCEO Junction Temperature Tj Storage Temperature Tstg V 1.5 A 700 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7522-002 • Package : NP • JEITA, JEDEC : SC-34A, TO-92, TO-226AA, SOT-54 • Minimum Packing Quantity : 1,500 pcs./box, 500pcs./bag 2 LOT No. 5.0 Electrical Connection 3 0.6 2.0 0.45 0.5 Marking RANK 2SC3332S 2SC3332T 2SC3332S-AA 2SC3332T-AA 4.0 C3332 5.0 4.0 14.0 1 0.45 0.44 1 1.3 2 3 1 : Emitter 2 : Collector 3 : Base 1.3 NP Semiconductor Components Industries, LLC, 2013 December, 2013 D1813 TKIM TC-00003081/91912 TKIM/83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/5 2SC3332 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB=120V, IE=0A VEB=4V, IC=0A hFE1 VCE=5V, IC=100mA VCE=5V, IC=10mA hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector to Emitter Saturation Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ Unit max 140* 0.1 μA 0.1 μA 400* 80 VCE=10V, IC=50mA VCE(sat) VBE(sat) Base to Emitter Saturation Voltage Ratings Conditions 120 MHz VCB=10V, f=1MHz IC=250mA, IB=25mA 8 0.12 0.4 pF IC=250mA, IB=25mA 0.85 1.2 V V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 180 V IC=1mA, RBE=∞ 160 V V(BR)EBO ton IE=10μA, IC=0A tstg tf See specified Test Circuit. 6 V 50 ns 1000 ns 60 ns * : The 2SC3332 is classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT RB INPUT VR RL 333Ω IB2 50Ω + 100μF + 470μF 100V --5V IC=20IB1=--20IB2=300mA Ordering Information Package Shipping 2SC3332S Device NP 500pcs./bag 2SC3332T NP 500pcs./bag 2SC3332S-AA NP 1,500pcs./box 2SC3332T-AA NP 1,500pcs./box IC -- VCE From top 100mA 90mA 80mA 70mA 60mA Collector Current, IC -- mA 700 600 500 Pb Free IC -- VCE 1000 Pulse Pulse A 50m 40mA 30mA 20mA 400 10mA 300 200 Collector Current, IC -- mA 800 memo 4.0mA 3.5mA 3.0mA 800 2.5mA 600 2.0mA 1.5mA 400 1.0mA 200 0.5mA 100 0 IB=0mA 0 0.2 0.4 0.6 0.8 Collector to Emitter Voltage, VCE -- V 1.0 ITR03219 0 IB=0mA 0 10 20 30 40 50 60 Collector to Emitter Voltage, VCE -- V 70 80 ITR03221 No.1334-2/5 2SC3332 VCE=5V 800 600 400 200 0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage, VBE -- V 10 7 5 3 2 1.0 2 10V 100 7 1.0 2 3 5 7 2 10 3 5 7 Collector to Base Voltage, VCB -- V 2 100 ITR03223 f T -- IC V 5 3 2 10 7 5 3 5 7 10 2 3 5 7 100 2 3 5 Collector Current, IC -- mA 5 3 2 1000 Collector Current, IC -- mA 3 2 1.0 5 3 2 0.1 3 5 Collector Current, IC -- mA 7 1000 2 ITR03228 7 2 100 ICP=1.5A IC=0.7A 3 5 7 1000 ITR03227 0m s DC op era tio 3 2 3 1.0 Ta=25°C Single pulse 1m 10 s ms 10 5 5 2 5 SOA 100 10 7 100 3 3 2 3 5 2 10 5 5 3 7 5 3 2 2 5 Collector Current, IC -- mA IC / IB=10 5 7 10 5V 7 5 3 V V CE=10 2 10 7 1000 2 ITR03225 VCE(sat) -- IC 10 3 100 5V =2 E 7 2 5 5 VC DC Current Gain, hFE 2 Pulse 3 Collector to Emitter Saturation Voltage, VCE(sat) -- V 3 1.2 5 2 3 5 7 10 2 n 3 5 7 100 Collector to Emitter Voltage, VCE -- V 2 3 ITR03229 PC -- Ta 800 Collector Dissipation, PC -- mW 5 ITR03222 7 3 f=1MHz 7 hFE -- IC 1000 Cob -- VCB 100 Gain-Bandwidth Product, f T -- MHz Collector Current, IC -- mA Common Base Output Capacitance, Cob -- pF IC -- VBE 1000 600 400 200 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR03230 No.1334-3/5 2SC3332 Outline Drawing 2SC3332S, 2SC3332T Mass (g) Unit 0.269 mm * For reference No.1334-4/5 2SC3332 Outline Drawing 2SC3332S-AA, 2SC3332T-AA Mass (g) Unit 0.269 mm * For reference ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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