Ordering number : EN8022A 2SA2127 Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP http://onsemi.com Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of MBIT process High current capacity and wide ASO • Low saturation voltage Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage --50 V --50 V Collector Current (Pulse) VEBO IC ICP Base Current IB --400 Collector Dissipation PC Tj 1 W Junction Temperature 150 °C Storage Temperature Tstg --55 to +150 °C Collector Current --6 V --2 A --4 A mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7520-002 • Package : MP • JEITA, JEDEC : SC-51, TO-92(1-WATT), TO-226AE • Minimum Packing Quantity : 1,000 pcs./box 4.7 6.0 5.0 2SA2127 2 3 3.0 0.5 0.6 0.5 Electrical Connection LOT No. 8.5 A2127 Marking 1.0 0.5 14.0 1 1 : Emitter 2 : Collector 3 : Base 1 2 3 1.45 1.45 MP Semiconductor Components Industries, LLC, 2013 September, 2013 60612 TKIM/21805EA TSIM TB-00000380 No.8022-1/9 2SA2127 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Conditions Ratings min typ max VCB= --40V, IE=0A VEB= --4V, IC=0A 200 Unit --1 μA --1 μA hFE2 VCE= --2V, IC= --100mA VCE= --2V, IC= --1.5A 560 fT Cob VCE= --10V, IC= --300mA VCB= --10V, f=1MHz VCE(sat) VBE(sat) IC= --1A, IB= --50mA IC= --1A, IB= --50mA V(BR)CBO V(BR)CEO IC= --10μA, IE=0A IC= --1mA, RBE=∞ --50 V --50 V V(BR)EBO ton IE= --10μA, IC=0A --6 tstg tf See specified Test Circuit. 40 420 MHz 16 pF --0.2 --0.4 V --0.9 --1.2 V V 35 ns 250 ns 24 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT IC OUTPUT IB2 VR RB RL 50Ω + 100μF VBE=5V + 470μF VCC= --25V IC=10IB1= --10IB2= --0.5A Ordering Information Package Shipping 2SA2127 Device MP 500pcs./bag 2SA2127-AE MP 1,000pcs./box memo Pb Free No.8022-2/9 2SA2127 IC -- VCE --10mA --1.4 --1.2 --6mA --1.0 --4mA --0.8 --0.6 --1.6 --2mA --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 IB=0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V VCE= --10V Ta=75°C 25°C 3 --25°C 2 100 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 7 5 3 2 100 7 5 3 --0.01 3 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 5 3 2 10 7 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 7 2 --0.1 °C 75 7 = Ta 5 5 --2 °C °C 25 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 2 3 IT07583 ASO <10μs ICP= --4A IC= --2A 10 10 ms 0m s DC s op μs --1.0 7 5 1m 0 50 Collector Current, IC -- A 3 s 0μ 5 2 IT07581 10 25°C 7 --1.0 3 3 75°C 5 Collector Current, IC -- A 2 7 3 5 --10 7 5 Ta= --25°C 2 VCE(sat) -- IC IT07582 IC / IB=20 --1.0 7 --0.1 IC / IB=20 --0.01 --0.01 VBE(sat) -- IC 3 5 --1.0 7 2 3 Collector Current, IC -- A f=1MHz 5 --0.1 2 IT07580 Cob -- VCB 100 IT07579 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE 5 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 IT07578 VCE= --2V 7 3 --0.01 0 0 --2.0 hFE -- IC 1000 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --25 °C 0 --5 --1.8 5°C 25°C Collector Current, IC -- A mA --1.6 VCE= --2V mA mA --20 --30 Ta= 7 mA 0 --4 --1.8 IC -- VBE --2.0 Collector Current, IC -- A --2.0 era 3 tio n 2 --0.1 7 5 3 2 3 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 IT07584 Ta=25°C Single Pulse --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 --100 IT07585 No.8022-3/9 2SA2127 PC -- Ta Collector Dissipation, PC -- W 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07586 Taping Specification 2SA2127-AE No.8022-4/9 2SA2127 No.8022-5/9 2SA2127 Outline Drawing 2SA2127-AE Mass (g) Unit 0.578 mm * For reference No.8022-6/9 2SA2127 Bag Packing Specification 2SA2127 No.8022-7/9 2SA2127 Outline Drawing 2SA2127 Mass (g) Unit 0.578 mm * For reference No.8022-8/9 2SA2127 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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