Preliminary Data Sheet NP90N03VLG R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) • Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP90N03VLG-E1-AY∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel NP90N03VLG-E2-AY∗1 Package TO-252, Taping (E1 type) TO-252, Taping (E2 type) ∗ Note: 1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 30 ±20 ±90 ±360 105 1.2 175 −55 to +175 41 168 Unit V V A A W W °C °C A mJ Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Tch(peak) ≤ 150°C, RG = 25 Ω Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 Rth(ch-C) Rth(ch-A) 1.43 125 °C/W °C/W Page 1 of 6 NP90N03VLG Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(th) | yfs | RDS(on)1 Drain to Source On-state Resistance ∗1 Min Typ 1.4 30 1.8 67 2.5 3.8 5000 600 420 17 13 73 9 90 13 26 0.9 42 35 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Max 1 ±10 2.5 Unit μA μA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC 3.2 8.0 7500 900 760 34 33 146 23 135 1.5 Test Conditions VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μ A VDS = 5 V, ID = 45 A VGS = 10 V, ID = 45 A VGS = 4.5 V, ID = 35 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 15 V, ID = 45 A, VGS = 10 V, RG = 0 Ω VDD = 24 V, VGS = 10 V, ID = 90 A IF = 90 A, VGS = 0 V IF = 90 A, VGS = 0 V, di/dt = 100 A/μ s Note: ∗1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 Page 2 of 6 NP90N03VLG Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 PW =1 i 00 ID(DC) 10 μs w Po D er ip i ss io at 1 d it e im nL ID - Drain Current - A S( RD G (V 100 ID(pul se) d it e Lim V ) i0 =1 S ) on TC = 25°C Single Pulse 1i m s i 1i 0 m s i 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 1000 Rt h(ch- A) = 125°C/W 100 10 Rt h(ch- C) = 1.43°C/W 1 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 Page 3 of 6 NP90N03VLG Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 1000 Pulsed 4.5 V 200 Tch = -55°C -25°C 25°C 75°C 125°C 150°C 175°C 100 V GS = 10 V 300 ID - Drain Current - A ID - Drain Current - A 400 100 10 1 0.1 0.01 V DS = 10 V Pulsed 0.001 0 0.0001 0 0.5 1 1.5 2 0 3 4 5 GATE TO SOURCE THRESHOLD VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN vs. CHANNEL TEMPERATURE CURRENT 3 V DS = V GS 2 ID = 10 mA 1 mA 1 250 μA 0 -75 -25 25 75 125 100 Tch = -55°C -25°C 25°C 75°C 125°C 150°C 175°C 10 V DS = 5 V Pulsed 1 175 0.1 Tch - Channel Temperature - °C 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 6 Pulsed 5 V GS = 4.5 4 3 10 V 2 1 0 1 10 100 ID - Drain Current - A R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 2 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V VDS - Drain to Source Voltage - V 1 6 5 4 3 2 1 ID = 45 A Pulsed 0 0 10 20 VGS - Gate to Source Voltage - V Page 4 of 6 NP90N03VLG Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 ID = 45 A Pulsed 5 V GS = 4.5 V 4 10 V 3 2 1 0 -75 -25 25 75 125 10000 Ciss 1000 Coss Crss 100 0.01 175 V DD = 15 V V GS = 10 V RG = 0 Ω td(off) 100 tf 10 td(on) tr 10 10 V DD = 24 V 15 V 6V 40 30 8 V GS 10 4 10 2 V DS ID = 90 A 100 0 ID - Drain Current - A 40 60 80 0 100 REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns 100 0V V GS = 10 V 10 1 0.1 0.01 0.001 0.0 20 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 6 20 0 1 100 50 1 0.1 IF - Diode Forward Current - A 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V 1000 0.1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns V GS = 0 V f = 1 MHz Pulsed 0.2 0.4 0.6 0.8 1.0 1.2 VF(S-D) - Source to Drain Voltage - V R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 1.4 di/dt = 100 A/μs V GS = 0 V 10 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 VGS - Gate to Source Voltage - V 6 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE NP90N03VLG Chapter Title Package Drawings (Unit: mm) TO-252 (MP-3ZP) (Mass: 0.27 g TYP.) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 1.13 2 3 0.8 1 1.14 MAX. 0.51 MIN. 4.0 MIN. 6.1±0.2 10.4 MAX. (9.8 TYP.) 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 Equivalent Circuit Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. R07DS0129EJ0100 Rev.1.00 Sep 24, 2010 Page 6 of 6 Revision History NP90N03VLG Rev. Date Page 1.00 Sep 24, 2010 − Description Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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