RENESAS QN7002

Preliminary Data Sheet
QN7002
R07DS0269EJ0100
Rev.1.00
Mar 11, 2011
N-CHANNEL MOSFET FOR SWITCHING
Description
The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
• Directly driven by a 4.5 V power source.
• Low on-state resistance
RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
QN7002-T1B-AT
Pure Sn
3000p/Reel
SC-59 (Mini Mold)
Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Remark for Agent
ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
200
mA
ID(pulse)
±800
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Drain Current (pulse)
Note
Note PW ≤ 10 μs, Duty Cycle ≤ 1%
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 1 of 6
QN7002
Chapter Title
Electrical Characteristics (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
UNIT
1
μA
±10
μA
2.5
V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
VGS(th)
VDS = VGS, ID = 250 μA
1.0
| yfs |
VDS = 10 V, ID = 100 mA
150
RDS(on)1
VGS = 10 V, ID = 100 mA
2.1
2.7
Ω
RDS(on)2
VGS = 4.5 V, ID = 50 mA
2.4
3.2
Ω
Gate Threshold Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
mS
Input Capacitance
Ciss
VDS = 10 V,
20
pF
Output Capacitance
Coss
VGS = 0 V,
9
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
2
pF
Turn-on Delay Time
td(on)
VDD = 10 V,
16
ns
tr
ID = 200 mA,
6.5
ns
td(off)
VGS = 10 V,
82
ns
tf
RG = 10 Ω
32
ns
ID = 200 mA, VDD = 25 V, VGS = 10 V
2
nC
0.86
V
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage
QG
Note
VF(S-D)
IF = 200 mA, VGS = 0 V
Note Pulsed
Test Circuit Switching Time
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
90%
VDS
90%
VGS
0
90%
VDS
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
0
10%
10%
tr
td(off)
Wave Form
td(on)
ton
tf
toff
Page 2 of 6
QN7002
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
80
60
40
20
0
0
25
50
75
100
125
150
0.2
0.1
0.0
175
0
75
100
125
150
175
TA – Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1
VDS = 5 V
Pulsed
0.9
VGS = 10 V
0.8
ID - Drain Current - A
ID - Drain Current - A
50
TA – Ambient Temperature - °C
1
0.7
0.6
4.5 V
0.5
0.4
0.3
0.1
TA = 125°C
75°C
25°C
−25°C
0.01
0.001
0.2
0.1
Pulsed
0
0.0001
0
2
4
6
8
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage – V
GATE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
1
VDS = VGS
ID = 250 μ A
2.5
2
1.5
1
-50
0
50
100
Tch - Channel Temperature - °C
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
150
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate Threshold Voltage - V
25
TA = −25°C
25°C
75°C
125°C
0.1
VDS = 10 V
Pulsed
0.01
0.01
0.1
1
ID - Drain Current - A
Page 3 of 6
QN7002
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
5
VGS = 4.5 V
10 V
0
0.001
0.01
0.1
1
10
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
10
Pulsed
ID = 100 mA
5
50 mA
0
0
2
ID - Drain Current - A
8
10
12
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
5
100
Pulsed
4
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - Ω
6
VGS – Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
VGS = 4.5 V, ID = 50 mA
3
2
10 V, 100 mA
1
Ciss
10
Coss
Crss
1
VGS = 0 V
f = 1.0 MHz
0.1
0
-25
0
25
50
75
100
0.1
125
Tch - Channel Temperature - °C
VGS – Gate to Source Voltage - V
td(off)
td(on)
tr
1
0.001
100
10
VDD = 10 V, VGS = 10 V
RG = 10 Ω
tf
10
10
DYNAMIC INPUT CHARACTERISTICS
1000
100
1
VDS - Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
4
VDD = 48 V
30 V
25 V
8
6
4
2
ID = 200 mA
0
0.01
0.1
ID - Drain Current - A
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
1
0
1
2
3
QG – Gate Chage - nC
Page 4 of 6
QN7002
Chapter Title
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF – Diode Forward Current - A
1
Pulsed
VGS = 0 V
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
VF(S-D) – Source to Drain Voltage - V
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 5 of 6
QN7002
Chapter Title
Package Drawings (Unit: mm)
SC-59 (Mini Mold)
0.4 +0.1
–0.05
2.8 ±0.2
0.65 +0.1
–0.15
1.5
0.95
3
0.4 +0.1
–0.05
0.95
2.9 ±0.2
2
1
1. Source
2. Gate
3. Drain
0 to 0.1
1.1 to 1.4
0.16 +0.1
–0.06
0.3
Marking
Equivalent Circuit
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
Page 6 of 6
Revision History
QN7002 Data Sheet
Rev.
Date
Page
1.00
Mar 11, 2011
−
Description
Summary
First Edition Issued
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