Data Sheet μPA3753GR R07DS0758EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features • Dual chip type • Low on-state resistance ⎯ RDS(on) = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ⎯ RDS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) • Low gate charge ⎯ QG = 13.4 nC TYP. (VGS = 10 V) • Small and surface mount package (Power SOP8) Ordering Information Part No. Lead Plating μPA3753GR-E1-AT μPA3753GR-E2-AT *1 *1 Note: Pure Sn (Tin) Packing Tape 2500 p/reel Package Power SOP8 0.08 g TYP. *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.) “-E1”,”-E2” indicates the unit orientation. Absolute Maximum Ratings (TA = 25°C) Ratings Unit Drain to Source Voltage (VGS = 0 V) Item VDSS Symbol 60 V Gate to Source Voltage (VDS = 0 V) Drain Current (DC) VGSS ID(DC) ±20 ±5.0 V A Drain Current (pulse) *1 ID(pulse) ±20 A Total Power Dissipation (1unit) Total Power Dissipation (2units) *2 PT1 PT2 0.85 1.12 W W Channel Temperature Tch 150 °C Storage Temperature TSTG −55 to +150 °C IAS EAS 5.0 2.5 A mJ *2 *3 Single Avalanche Current Single Avalanche Energy *3 Notes: *1. PW ≤ 10 μs, Duty Cycle ≤ 1% *2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt *3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH R07DS0758EJ0100 Rev.1.00 May 25, 2012 Page 1 of 6 μPA3753GR Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Symbol IDSS Gate Leakage Current IGSS Gate Cut-off Voltage Forward Transfer Admittance *1 VGS(off) | yfs | Drain to Source On-state Resistance *1 Input Capacitance MIN. TYP. MAX. 1.0 Unit μA Test Conditions VDS = 60 V, VGS = 0 V ±100 nA VGS = ±20 V, VDS = 0 V 2.5 V S VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 2.5 A 1.5 2.5 RDS(on)1 44 56 mΩ VGS = 10 V, ID = 2.5 A RDS(on)2 Ciss 49 640 72 mΩ pF VGS = 4.5V, ID = 2.5 A VDS = 10 V, Output Capacitance Coss 72 pF VGS = 0 V, Reverse Transfer Capacitance Turn-on Delay Time Crss td(on) 32 8.5 pF ns f = 1.0 MHz ID = 2.5 A, VDD = 30 V, Rise Time tr 3.7 ns VGS = 10 V, Turn-off Delay Time td(off) 30 ns RG = 10 Ω Fall Time Total Gate Charge tf QG 5.1 13.4 ns nC VGS = 10 V, ID = 5 A , Gate to Source Charge QGS 1.6 nC VDD = 48 V Gate to Drain Charge Body Diode Forward Voltage *1 QGD VF(S-D) 3.1 nC V IF = 5.0 A, VGS = 0 V Reverse Recovery Time trr 22 ns IF = 5.0 A, VGS = 0 V, Reverse Recovery Charge Qrr 36 nC di/dt = 100 A/μs Note: 1.2 *1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 BVDSS τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω R07DS0758EJ0100 Rev.1.00 May 25, 2012 RL VDD Page 2 of 6 μPA3753GR Chapter Title Typical Characteristics (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE 1.2 120 1 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % OPERATING AREA 140 100 80 60 40 20 0 0 25 50 75 100 125 150 Mounted on glass epxy board of 25.4 mm x 25.4 mm x 0.8 mmt 0.8 0.6 2 units 1 unit 0.4 0.2 0 0 175 25 TA - Ambient Temperature - °C 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 100 ms 10 ms ID(pulse) = 20 A PW = 200 μ s ID - Drain Current - A 1 ms 10 ID(DC) = 5 A 1 o S( n) d ite m ) Li 0V 1 = R D V GS ( 10 s Power Dissipation Limited 0.1 Single Pulse TA = 25ºC Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V rth(t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Rth(ch-A) = 148ºC/W 100 10 1 0.1 0.01 100 μ Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt Single pulse, 1unit TA = 25ºC 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0758EJ0100 Rev.1.00 May 25, 2012 Page 3 of 6 μPA3753GR Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 20 100 10 ID - Drain Current - A ID - Drain Current - A V GS = 10 V 15 4.5 V 10 5 TA = 150°C 75°C 25°C –55°C 1 0.1 0.01 VDS = 10 V Pulsed Pulsed 0 0.001 0 0.4 0.8 1.2 1.6 0 3 4 GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. DRAIN CHANNEL TEMPERATURE CURRENT | yfs | - Forward Transfer Admittance - S 3 2 1 VDS = 10 V ID = 1.0 mA 0 -50 RDS(on) - Drain to Source On-state Resistance - mΩ 2 VGS - Gate to Source Voltage - V 0 50 100 150 100 TA = –55°C 25°C 75°C 150°C 10 1 0.1 Pulsed, VDS = 10 V 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 100 200 Pulsed 80 VGS = 4.5 V 60 10 V 40 20 0 0.1 1 10 ID - Drain Current - A R07DS0758EJ0100 Rev.1.00 May 25, 2012 100 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) – Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V 1 Pulsed 160 120 80 ID = 2.5 A 40 0 0 4 8 12 16 20 VGS - Gate to Source Voltage - V Page 4 of 6 μPA3753GR Chapter Title CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. 100 1000 80 Ciss, Coss, Crss - Capacitance - pF VGS = 4.5 V ID = 2.5 A 60 VGS = 10 V ID = 2.5 A 40 20 Pulsed Ciss 100 VGS = 0 V f = 1.0 MHz Crss 10 0 -50 0 50 100 0.1 150 1 10 100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 60 100 VDS - Drain to Source Voltage - V td(off) td(on), tf, td(off), tr - Switching Time - ns Coss td(on) 10 tf tr VDD = 30 V VGS = 10 V RG = 10 Ω 1 12 10 V DD = 48 V 30 V 12 V 40 8 6 20 4 2 ID = 5 A 0 0.1 1 10 100 0 0 2 ID - Drain Current - A 4 6 8 10 12 14 16 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs DIODE FORWARD CURRENT 100 100 10 1 4.5 V 0V 0.1 0.01 Pulsed 0.001 0 0.4 0.8 1.2 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A VGS = 10 V 10 1 V GS = 0 V di/dt = 100 A/μ s 0.1 0.1 1 10 100 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A R07DS0758EJ0100 Rev.1.00 May 25, 2012 Page 5 of 6 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE μPA3753GR Chapter Title Package Drawings (Unit: mm) Power SOP8 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 6.0 ±0.3 4 4.4 5.37 MAX. 0.8 0.15 +0.10 –0.05 1.44 0.05 MIN. 1.8 MAX. 1 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M Equivalent Circuit (1/2 circuit) Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurre R07DS0758EJ0100 Rev.1.00 May 25, 2012 Page 6 of 6 μ PA3753GR Data Sheet Revision History Description Rev. Date 1.00 May 25, 2012 Page − Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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