HVGT BR4F 4.0kV 0.8A HIGH VOLTAGE DIODES Outline Drawings : mm BR4F is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. DO-590 Cathode Mark Lot No. o 5.0 Features o 1.28 High speed switching High Current High surge resisitivity for CRT discharge 27 min. 9.0 27 min. High reliability design High Voltage Cathode Mark Applications X light Power supply Type Laser Mark Voltage doubler circuit BR4F Microwave emission power BR4F Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition BR4F Units 4.0 kV 0.8 A peak I FSM 20 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +125 °C Repetitive Peak Renerse Voltage Average Output Current Suege Current V RRM IO Ta=25°C,Resistive Load Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions BR4F Units Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 11 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C 150 nS Junction Capacitance Cj at 25°C,VR=0V,f=1MHz -- pF GETE ELECTRONICS CO.,LTD Http://www.getedz.com E-mail:[email protected] 2014