BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs High voltage, high current Darlington transistor array BA12001B / BA12003B / BA12003BF / BA12004B The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor arrays consisting of seven circuits of Darlington transistors. Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive loads such as relay coils, attachments can be kept to a minimum. With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use with various drivers and as an interface with other elements. zApplications Drivers for LEDs, lamps, relays and solenoids Interface with other elements zFeatures 1) High output current. (IOUT=500mA Max.) 2) High output sustain voltage. (VOUT=50V Max.) 3) Seven Darlington transistors built in. 4) Built-in surge-absorbing clamp diode. (Note : Refer to the “Reference items when using in application.” ) zBlock diagram IN1 1 16 OUT1 IN2 2 15 OUT2 IN3 3 14 OUT3 IN4 4 13 OUT4 IN5 5 12 OUT5 IN6 6 11 OUT6 IN7 7 10 OUT7 GND 8 9 COM BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs zInternal circuit configuration COM OUT COM OUT IN 2.7kΩ IN 7.2kΩ 7.2kΩ 3kΩ 3kΩ GND GND Fig.1 BA12001B Fig.2 BA12003B / BF COM IN OUT 10.5kΩ 7.2kΩ 3kΩ GND Fig.3 BA12004B zAbsolute maximum ratings (Ta=25°C) Parameter Power supply voltage Symbol Limits Unit VCE 60 V Input voltage other than BA12001B VIN −0.5∼+30 V Input current BA12001B IIN 25 mA / unit Output current IOUT 500 mA / unit Ground pin current IGND 2.3∗1 Power dissipation DIP package SOP package Diode reverse voltage A 1250∗2 Pd mW 625∗3 VR 60 V Diode forward current IF 500 mA Operating temperature Topr −25∼+75 ˚C Storage temperature Tstg −55∼+150 ˚C ∗1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits ∗2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C . ∗3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C . zRecommended operating conditions (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Output current Parameter IOUT − − 350 mA Fig.9, 10 Power supply voltage VCE − − 55 V − Input voltage (excluding BA12001B) VIN − − 30 V − Input current (BA12001B only) IIN − − 25 mA / unit − BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Output leakage current IL − 0 10 µA VCE = 60V DC current transfer ratio hFE 1000 2400 − V VCE = 2V, IOUT = 350mA 0.94 1.1 Output saturation voltage VCE(sat) − 1.14 1.3 1.46 1.6 1.75 2 2.53 5 1.91 2.4 2.75 6 2.17 3.4 3.27 8 0.90 1.35 0.39 0.5 BA12003B / BF IOUT = 100mA, IIN = 250µA IOUT = 200mA, IIN = 350µA V IOUT = 350mA, IIN = 500µA VIN − VIN − VIN − IIN − IR − 0 50 Diode forward voltage VF − 1.73 2 V IF = 350mA Input capacitance CIN − 30 − pF VIN = 0V, f = 1MHz BA12004B BA12003B / BF Input voltage BA12004B BA12003B / BF BA12004B BA12003B / BF Input current BA12004B Diode reverse current V VCE = 2V, IOUT = 100mA V VCE = 2V, IOUT = 200mA V VCE = 2V, IOUT = 350mA mA VIN = 3.85V VIN = 5V µA VR = 60V Note: Input voltage and input current for BA12001 vary based on external resistor. zMeasurement circuits (1) Output leakage current IL OPEN (2) DC current transfer ratio Output saturation voltage hFE = IO II VCE (sat) (3) Input voltage VIN OPEN OPEN OPEN IL IO II IO VCE VI VCE VCE (sat) (4) Input current IIN (5) Diode reverse current IR (6) Diode forward voltage IF OPEN IR OPEN VR OPEN IF OPEN VF VI OPEN OPEN (7) Input capacitance CIN OPEN f Capacitance bridge LO HI VI OPEN TEST SIGNAL LEVEL 20mVrms Fig.4 BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs zApplication example RY LED (2) LED driver (1) Relay driver Fig.5 zApplication notes The BA12001B is a transistor array which can be directly coupled to a general logic circuit such as PMOS, CMOS, or TTL. A current limiting resistor needs to be connected in series with the input. The BA12003B / BF can be coupled directly to TTL or CMOS output (when operating at 5V). In order to limit the input current to a stable value, resistors are connected in series to each of the inputs. The BA12004B is designed for direct coupling to CMOS or PMOS output using a 6 to 15V power supply voltage. In order to limit the input current to a stable value, resistors are connected in series to each of the inputs. The load for each of these products should be connected between the driver output and the power supply. To protect the IC from excessive swing voltage, the COM pin (Pin 9) should be connected to the power supply. Fig.6 shows the configuration of the on-chip diode for surge absorption. In the construction of the surge-absorbing diode,there is an N-P junction between the N-layer (N-well + BL) and the substrate (P-sub) so that when the diode is on, current flows from the output pin to the substrate. In terms of the vertical construction, this diode is configured similar to a PNP transistor. When using the surge-absorbing diode, take appropriate measures regarding the thermal characteristics of the design considering the current that will be handled. Also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing diode can be foreseen, we strongly recommend connecting a Schottky barrier diode (or other type of diode with a low foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current. OUT COM In-flow current to the surge-absorbing diode N+ P+ N+ IDi ISO P ISO Isub N-well N+ B/L P-sub Fig.6 Vertical construction of the surge-absorbing diode P BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs zElectrical characteristic curves 500 500 1400 BA12003BF 625 600 400 200 0 25 50 75 100 125 400 2ch 300 3ch 200 4ch 5ch 100 0 150 6ch The shaded range should never be exceeded under any circumstances Ta = 25˚C 200 64mA 20 80 100 500 IIN = 250µA OUTPUT CURRENT : IOUT (mA) DC CURRENT GAIN : hFE Usage conditions range 60 Fig.9 Output conditions (II) 1000 Max. usage conditions 40 DUTY CYCLE (%) 2000 300 110mA Ta = 75˚C 100 0 Ta = 25˚C VCE = 2.0V 5000 350 100 20% 300 Fig.8 Output conditions (I) 500 200 350 10% DUTY CYCLE : (%) Fig.7 Power dissipation vs. ambient temperature OUTPUT CURRENT: IOUT (mA) 7ch All series 400 10 20 30 40 50 60 70 80 90 100 AMBIENT TEMPERATURE : Ta (˚C) 400 OUTPUT CURRENT : IOUT (mA) OUTPUT CURRENT : IO (mA) POWER DISSIPATION : Pd (mW) 1000 800 When all circuits are on All series Other than BA12003BF 1250 1200 500 200 400 300 Ta = −30˚C 200 Ta = 25˚C 100 Ta = 80˚C 10 20 30 40 50 100 10 20 50 100 200 OUTPUT CURRENT : IOUT (mA) 300 Ta = −30˚C 200 Ta = 25˚C 100 Ta = 80˚C 0.5 1.0 1.5 2.0 2.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.13 Output current vs. voltage between collector and emitter 1.5 2.0 2.5 20 IIN = 500µA IIN = 350µA 400 1.0 Fig.12 Output current vs. voltage between collector and emitter 500 500 0.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 DC current transfer ratio vs. output current Fig.10 Usage conditions range per circuit OUTPUT CURRENT : IOUT (mA) 1000 OUTPUT CURRET : IOUT (mA) SUPPLY VOLTAGE: VCC (V) 0 10 500 0 0 INPUT CURRENT : IIN (mA) 0 400 300 Ta = −30˚C 200 Ta = 25˚C 100 15 Ta = −25˚C Ta = 25˚C Ta = 75˚C 10 5 Ta = 80˚C 0 0 0.5 1.0 1.5 2.0 2.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.14 Output current vs. voltage between collector and emitter 0 10 20 30 40 INPUT VOLTAGE : VIN (V) Fig.15 Input current vs. input voltage (BA12003B / BF) BA12001B / BA12003B / BA12003BF / BA12004B Standard ICs 4 25 25 Ta = 75˚C 2 1 0 10 20 30 OUTPUT VOLTAGE : VCE OUT (V) INPUT CURRENT : IIN (mA) Ta = 25˚C 3 20 Ta = 75˚C Ta = 25˚C Ta = −25˚C 15 10 5 VOUT = 20V RL = 68Ω 20 0.5 15 10 5 1 1.5 2 1 2.5 2 3 4 Fig.18 Output voltage vs. input voltage (BA12004B) Fig.17 Output voltage vs. input voltage (BA12003B / BF) zExternal dimensions (Units : mm) BA12001B / BA12003B / BA12004B BA12003BF 10.0 ± 0.2 19.4 ± 0.3 8 0.51Min. 6.2 ± 0.3 0.11 0.3 ± 0.1 0.5 ± 0.1 1.5 ± 0.1 3.2 ± 0.2 4.25 ± 0.3 7.62 2.54 9 1 8 1.27 0.4 ± 0.1 0.15 ± 0.1 1 16 4.4 ± 0.2 9 6.5 ± 0.3 16 0.3Min. 0° ~ 15° 0.15 DIP16 5 INPUT VOLTAGE : VIN (V), VI (V) INPUT VOLTAGE : VIN (V) INPUT VOLTAGE : VIN (V) Fig.16 Input current vs. input voltage (BA12004B) Ta = 75˚C Ta = 25˚C Ta = −25˚C 0 0 40 OUTPUT VOLTAGE : VOUT (V), VCE (V) VOUT = 20V RL = 68Ω Ta = −25˚C SOP16