RoHS GENERAL PURPOSE TRANSISTORS BC846, BC847, BC848 (A,B,C) NPN SOT-323 • S Prefix for automotive and other applications requiring unique site and control change • AEC-Q101 Qualified and PPAP Capable Collector 1 BASE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Base 2 EMITTER Emitter Symbol BC846 BC847 BC848 Collector - Base Voltage VCBO 80 50 30 V Collector - Emitter Voltage VCEO 65 45 30 V Emitter - Base Voltage VEBO 6.0 6.0 5.0 V Collector Current - Continuous Total Device Dissipation FR-5 Board (Note 1) TA = 25° C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 0.071(1.80) 0.087(2.20) Unit 0.026 BSC (0.65 BSC) 3 .045 (1.15 ) .053 (1.35 ) Parameter NPN COLLECTOR 3 IC 100 mAdc PD 150 MW R0JA 833 °C / W TJ, Tstg -55 to +150 °C 1 Collector Cut - Off Current BC846 Emitter - Base Breakdown Voltage BC847 BC848 BC846 Collector - Base Breakdown BC847 Voltage BC848 BC846 Collector - Emitter Breakdown BC847 Voltage BC848 BC846 Collector - Emitter Breakdown BC847 Voltage BC848 BC846 DC Current Gain BC847 BC848 BC846 DC Current Gain BC847 BC848 Symbol I CBO V(BR)EBO IE = 1.0µA -6 6 5 80 50 30 65 45 30 80 50 30 Typ --- IC = 10 µA, VEB = 0 hFE IC = 10 µA, VCE = 5.0 V -- hFE IC = 2.0 mA, VCE = 5.0 V 110 200 420 90 150 270 180 290 520 -- -- VBE (on) fT Cobo NF IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 Vdc, f = 100MHZ VCB = 10 V, f = 1.0 MHZ IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz BW = 200Hz 15 5.0 nA µA -- V -- -- -- -- SOT-323 -- -- -220 450 800 0.25 0.6 V V V -- -V -- V 580 -- 0.7 0.9 660 -- 700 770 mV 100 -- -- MHZ -- -- 4.5 pF -- -- 10 dB -- 0.000(0.00) 0.004(0.10) Max Unit Dimensions in inches (millimeters) V(BR)CES Base - Emitter Voltage Noise Figure VCB = 30 V Min IC = 10 MA VBE (sat) Output Capacitance Test Conditions V(BR)CEO Base - Emitter Saturation Voltage Current - Gain - Bandwidth Product 0.032(0.80) 0.040(1.00) IC = -10µA VCE (sat) 2 0.079(2.00) 0.095(2.40) V(BR)CBO Collector - Emitter Saturation Voltage 0.008(0.20) 0.022(0.56) .047(1.20) .047(1.20) .055(1.40) .055(1.40) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter .004 (0.10) .010 (0.25) FEATURES Page 1 of 6 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21 RoHS GENERAL PURPOSE TRANSISTORS BC846, BC847, BC848 (A,B,C) NPN SOT-323 BC846A, BC8487A, BC848A TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 300 0.18 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 200 25°C −55°C 100 IC/IB = 20 0.16 0.12 25°C 0.10 0.08 0.06 −55°C 0.04 0.02 0 0 0.001 0.01 0.0001 1 0.1 IC, COLLECTOR CURRENT (A) 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0.0001 I C , COLLECTOR CURRENT (A) θVB, TEMPERATURE COEFFICIENT ° (mV/ C) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Collector Saturation Region TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 50 mA 10 mA 20 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 0.01 0.1 Figure 6. - Base Emitter Temperature Coefficient 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 Figure 7. Capacitances 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 8. Current - Gain Bandwidth Product 400 7.0 fT, CURRENT - GAIN BANDWIDTH PRODUCT (MHz) 10 5.0 0.001 I C , COLLECTOR CURRENT (A) 2.0 IC = 0.1 1.2 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.8 0.01 Figure 4. Base Emitter Voltage vs. Collector Current −55°C IC/IB = 20 0.9 0.001 I C , COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current 1.0 C, CAPACITANCE (pF) 150°C 0.14 TA = 25°C C ib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 300 200 60 40 30 20 0.5 0.7 40 VCE = 10 V TA = 25°C 100 80 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Page 2 of 6 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21 RoHS GENERAL PURPOSE TRANSISTORS BC846, BC847, BC848 (A,B,C) NPN SOT-323 BC846B TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 600 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 400 0.30 VCE = 1 V 150°C 500 25°C 300 −55°C 200 100 IC/IB = 20 150°C 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.001 0.01 1 0.1 0 0.0001 0.001 0.01 I C , COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current IC/IB = 20 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 1.2 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.01 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0.0001 0.001 I C , COLLECTOR CURRENT (A) θVB, TEMPERATURE COEFFICIENT ° (mV/ C) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Collector Saturation Region TA = 25°C 1.6 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.01 0.1 I C , COLLECTOR CURRENT (A) 2.0 20 mA 0.1 5.0 10 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 20 Figure 6. - Base Emitter Temperature Coefficient 1.0 1.4 1.8 VB for VBE -55°C to 125°C 2.2 2.6 3.0 0.2 Figure 7. Capacitances 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 0.5 100 200 Figure 8. Current - Gain Bandwidth Product 40 fT, CURRENT - GAIN BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 Cob 4.0 2.0 0.1 0.2 1.0 2.0 0.5 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 50 100 Page 3 of 6 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21 RoHS GENERAL PURPOSE TRANSISTORS BC846, BC847, BC848 (A,B,C) NPN SOT-323 BC847B, BC848B TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 600 0.30 VCE = 1 V 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 500 400 25°C 300 200 −55°C 100 IC/IB = 20 0.25 150°C 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.001 0.01 0.1 1 0 0.0001 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 1.2 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.01 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0.0001 I C , COLLECTOR CURRENT (A) θVB, TEMPERATURE COEFFICIENT ° (mV/ C) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Collector Saturation Region 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 0.1 Figure 6. - Base Emitter Temperature Coefficient -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 100 Figure 8. Current - Gain Bandwidth Product 400 7.0 fT, CURRENT - GAIN BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) 0.001 0.01 I C , COLLECTOR CURRENT (A) 1.0 Figure 7. Capacitances 10 5.0 0.1 Figure 4. Base Emitter Voltage vs. Collector Current 1.1 1.0 0.001 0.01 I C , COLLECTOR CURRENT (A) TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 300 200 60 40 30 20 0.5 0.7 40 VCE = 10 V TA = 25°C 100 80 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Page 4 of 6 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21 RoHS GENERAL PURPOSE TRANSISTORS BC846, BC847, BC848 (A,B,C) NPN SOT-323 BC847C, BC848C TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current 150°C hFE, DC CURRENT GAIN 0.30 VCE = 1 V 900 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1000 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 800 700 600 25°C 500 400 −55°C 300 200 100 IC/IB = 20 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 0.001 0.01 0.1 150°C 0 1 0.0001 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 20 −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.1 0.0001 I C , COLLECTOR CURRENT (A) θVB, TEMPERATURE COEFFICIENT ° (mV/ C) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 5. Collector Saturation Region TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 50 mA 10 mA 20 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 0.1 Figure 6. - Base Emitter Temperature Coefficient -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 100 Figure 8. Current - Gain Bandwidth Product 400 7.0 fT, CURRENT - GAIN BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) 0.01 1.0 Figure 7. Capacitances 10 5.0 0.001 I C , COLLECTOR CURRENT (A) 2.0 IC = 0.1 Figure 4. Base Emitter Voltage vs. Collector Current 1.1 1.0 0.001 0.01 I C , COLLECTOR CURRENT (A) TA = 25°C C ib 3.0 C ob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 300 200 60 40 30 20 0.5 0.7 40 VCE = 10 V TA = 25°C 100 80 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Page 5 of 6 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21 RoHS GENERAL PURPOSE TRANSISTORS BC846, BC847, BC848 (A,B,C) NPN SOT-323 SAFE OPERATING AREA CURVES Figure 1. Safe Operating Area for BC846A, BC846B Figure 2. Safe Operating Area for BC847A, BC847B, BC847C 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 10 1 mS 0.1 1S Thermal Limit 0.01 0.001 100 0.1 VCE, COLLECTOR EMITTER VOLTAGE (V) 1 10 100 VCE ,COLLECTOR EMITTER VOLTAGE (V) Figure 3. Safe Operating Area for BC848A, BC848B, BC848C 1 IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Page 6 of 6 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2014.01.21