GENERAL PURPOSE TRANSISTORS RoHS BC807 (16, 25, 40) PNP SOT-23 FEATURES COLLECTOR 3 • S Prefix for automotive and other applications requiring unique site and control change • AEC-Q101 Qualified and PPAP Capable Collector 1 BASE Base 2 EMITTER MAXIMUM RATINGS (TA=25°C unless otherwise noted) PNP Emitter 0.120(3.05) 0.104(2.65) 0.020(0.51) 0.015(0.37) Symbol Value Unit VCBO -50 V Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5 V IC -500 mAdc Collector Current - Continuous FR-5 Board (Note 1) TA = 25° C Derate Above 25° C Total Device Alumina Substrate (Note 2) Dissipation TA = 25° C Derate Above 25° C Thermal FR-5 Board Resistance, Junction-to-Ambient Alumina Substrate Junction Temperature Range 225 1.8 PD 300 2.4 2 .041(1.05) .041(1.05) .047(0.89) .047(0.89) 0.120(3.05) 0.104(2.65) mW mW / ° C 0.043(1.10) 0.035(0.89) 0.006(0.15) 0.001(0.013) 556 ROJA 0.024(0.61) 0.018(0.45) °C / W 417 TJ Storage Temperature Range 1 .007 (0.178) .003 (0.076) Parameter Collector - Base Voltage .055 (1.40) .047 (1.19) 3 TSTG -55 to +150 -55 to +150 SOT-23 °C Dimensions in inches and (millimeters) °C Note 1: FR-5 = 1.0 x 0.75 x 0.062” Note 2: Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina ON OFF ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Collector Cut - Off Current ICBO Emitter - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage BC807-16 BC807-25 DC Current Gain BC807-40 Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Current - Gain - Bandwidth Product Output Capacitance Test Conditions VCB = -20V VCB = -20V, TJ = 150°C Min TYP Max Unit -100 nA ---5.0 µA V(BR)EBO IE = -1.0 µA -5.0 -- -- V V(BR)CES VEB = 0, IC = 10 µA -50 -- -- V V(BR)CEO IC = -10 mA -45 -- -- V IC = -100 mA, VCE = -1.0 V IC = -500 mA, VCE = -1.0 V 1000 160 250 40 VCE (sat) IC = -500 mA, IB = -50 mA VBE (on) IC = -500 mA, IB = -1.0 V hFE fT Cobo --- IC = -10 mA VCE = -5.0 Vdc f = 100MHz VCB = -10 V f = 1.0 MHz -- 250 400 600 -- -- -- -0.7 V -- -- -1.2 V 100 -- -- MHz -- 10 -- pF -- --- Page 1 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2013.01.22 GENERAL PURPOSE TRANSISTORS RoHS BC807 (16, 25, 40) PNP SOT-23 Bc807 (16,25,40) SAFE OPERATING CURVE Figure 1. Safe Operating Area IC, COLLECTOR CURRENT (A) 1 1 mS 1S 100 mS 0.1 10 mS Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) BC807-16 TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 500 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 1 V 400 150°C 300 25°C 200 −55°C 100 0 IC/IB = 10 150°C 25°C −55°C 0.1 0.01 0.001 0.01 0.1 1 0.001 0.01 1.0 Figure 3. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 1 0.1 Figure 4. Base Emitter Voltage vs. Collector Current 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 1 0.0001 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. Saturation Region Figure 6. Temperature Coefficients -1.0 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV / °C) VCE, COLLECTOR-EMITTER VOLTAGE VOLTAGE (V) 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) -100 +1.0 VC for VCE(sat) 0 -1.0 -2.0 VB for VBE -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 7. Capacitances C, CAPACITANCE (pF) 100 Cib 10 Cob 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) -100 Page 2 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2013.01.22 GENERAL PURPOSE TRANSISTORS RoHS BC807 (16, 25, 40) PNP SOT-23 BC807-25 TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 500 1 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 400 25°C 300 200 −55°C 100 IC/IB = 10 150°C 25°C −55°C 0.1 0.01 0 0.001 0.01 0.001 1 0.1 0.01 Figure 3. Base Emitter Saturation Voltage vs. Collector Current −55°C IC/IB = 10 1.0 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. Saturation Region Figure 6. Temperature Coefficients -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) +1.0 θV, TEMPERATURE COEFFICIENTS (mV / °C) VCE, COLLECTOR-EMITTER VOLTAGE VOLTAGE (V) 1 Figure 4. Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (A) VC for VCE(sat) 0 -1.0 -1.0 Figure 7. Capacitances fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 1000 C ib 10 Cob 1.0 -0.1 -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) VB for VBE -2.0 -100 100 C, CAPACITANCE (pF) 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 8. Current Gain Bandwidth Product vs. Collector Current VCE = 1 V TA = 25°C 100 10 -100 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Page 3 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2013.01.22 GENERAL PURPOSE TRANSISTORS RoHS BC807 (16, 25, 40) PNP SOT-23 BC807-40 TYPICAL CHARACTERISTIC CURVES Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1 1000 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 900 150°C 800 700 600 500 25°C 400 300 −55°C 200 100 IC/IB = 10 150°C 25°C 0.01 0 0.001 0.01 0.001 1 0.1 0.01 Figure 3. Base Emitter Saturation Voltage vs. Collector Current −55°C IC/IB = 10 1.0 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.1 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 1 0.1 Figure 4. Base Emitter Voltage vs. Collector Current 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 1 0.001 IC, COLLECTOR CURRENT (A) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 5. Saturation Region Figure 6. Temperature Coefficients -1.0 TJ = 25°C -0.8 IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 IC = -100 mA IC = -10 mA 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) +1.0 θV, TEMPERATURE COEFFICIENTS (mV / °C) VCE, COLLECTOR-EMITTER VOLTAGE VOLTAGE (V) 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) VC for VCE(sat) 0 -1.0 -1.0 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 1000 Cib 10 Cob -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances 1.0 -0.1 VB for VBE -2.0 -100 100 C, CAPACITANCE (pF) −55°C 0.1 Figure 8. Current Gain Bandwidth Product vs. Collector Current VCE = 1 V TA = 25°C 100 10 -100 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Page 4 of 4 RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected] X09BP01 2013.01.22