BC817 - RFE International, Inc.

GENERAL PURPOSE TRANSISTORS
RoHS
BC817 (16, 25, 40) NPN
SOT-23
FEATURES
3
COLLECTOR
3
• S Prefix for automotive and other applications
requiring unique site and control change
• AEC-Q101 Qualified and PPAP Capable
1
1
BASE
2
NPN
2
EMITTER
MAXIMUM RATINGS
(TA=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector - Base Voltage
VCBO
50
V
Collector - Emitter Voltage
VCEO
45
V
Emitter - Base Voltage
VEBO
5.0
V
IC
500
mAdc
225
1.8
mW
mW / ° C
300
2.4
mW
mW / ° C
RJ0A
556
417
°C / W
TJ
TSTG
-55 ~ 150
° C
0.120(3.05)
0.104(2.65)
0.020(0.51)
0.015(0.37)
Junction & Storage Temperature Range
1
.041(1.05) .041(1.05)
.047(0.89) .047(0.89)
0.120(3.05)
0.104(2.65)
PD
0.043(1.10)
0.035(0.89)
0.006(0.15)
0.001(0.013)
Collector Cut - Off Current
Emitter - Base Breakdown
Voltage
Collector - Emitter
Breakdown Voltage
Collector - Emitter
Breakdown Voltage
DC Current Gain
Symbol
I CBO
Dimensions in inches and (millimeters)
Test Conditions
VCB = 20V
VCB = 20V, TA = 150° C
Min Typ. Max Unit
100 nA
--5.0 µA
V(BR)EBO IE = 1.0µA
5.0
--
--
V
V(BR)CEO IC = 10mA
45
--
--
V
V(BR)CES VEB = 0, IC = 10µA
50
--
--
V
--
250
--
400
100
BC817-16
BC817-25
hFE
VCE = 1.0V, IC = 100mA
160
BC817-40
--
250
--
600
VCE = 1.0V, IC = 500mA
40
--
--
Collector - Emitter
Saturation Voltage
VCE (sat)
IC = 500mA, IB = 50mA
--
--
0.7
V
Base - Emitter On Voltage
VBE (on)
IC = 500mA, VCE = 1.0mA
--
--
1.2
V
100
--
--
MHz
--
10
--
pF
Transistion Frequency
Output Capacitance
fT
Cobo
0.024(0.61)
0.018(0.45)
SOT-23
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter
2
.007 (0.178)
.003 (0.076)
Collector Current - Continuous
Total Device Dissipation
FR-5 Board (Note 1)
TA = 25° C
Derate above 25° C
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25° C
Derate above 25° C
Thermal Resistance
FR-5 Board
Junction to Ambient Alumina Substrate
.055 (1.40)
.047 (1.19)
3
VCE = 5.0V, IC = 10mA
f = 100MHz
VCB = 10V, f = 1.0MHz
Page 1 of 4
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected]
X09BP01
2014.01.22
GENERAL PURPOSE TRANSISTORS
RoHS
BC817 (16, 25, 40) NPN
SOT-23
BC817 (16,25,40) SAFE OPERATING AREA
Figure 1. Safe Operating Area
1
1 ms
10 ms
100 ms
1s
Thermal Limit
IC (A)
0.1
0.01
Single Pulse Test @
°C
A =T25
0.001
0.01
0.1
1
VCE (Vdc)
10
100
BC817-16 TYPICAL CHARACTERISTIC CURVES
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 1. DC Current Gain vs. Collector
Current
300
1
hFE, DC CURRENT GAIN
200
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
150°C
25°C
−55°C
100
IC/IB = 10
150°C
25°C
−55°C
0.1
0.01
0
0.001
0.01
0.1
0.001
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
−55°C
IC/IB = 10
0.9
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
1
0.0001
Figure 5. Saturation Region
0.01
0.1
1
Figure 6. Temperature Coefficients
+1
TJ = 25°C
0.8
0.6
IC = 10 mA
100 mA 300 mA
500 mA
0.2
0.1
1
10
IB, BASE CURRENT (mA)
100
0V, TEMPERATURE COEFFICIENTS
(mV / °C)
VCE, COLLECTOR-EMITTER VOLTAGE
0.001
IC, COLLECTOR CURRENT (A)
1.0
0
0.01
1
1.2
IC, COLLECTOR CURRENT (A)
0.4
0.1
Figure 4. Base Emitter Voltage vs.
Collector Current
1.1
1.0
0.01
IC, COLLECTOR CURRENT (A)
VC for
VCE(sat)
0
-1
VB for
-2
1
VBE
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 7. Capacitances
C, CAPACITANCE (pF)
100
C ib
10
Cob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
100
Page 2 of 4
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected]
X09BP01
2014.01.22
GENERAL PURPOSE TRANSISTORS
RoHS
BC817 (16, 25, 40) NPN
SOT-23
BC817-25 TYPICAL CHARACTERISTIC CURVES
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 8. DC Current Gain vs. Collector
Current
500
1
hFE, DC CURRENT GAIN
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VCE = 1 V
400
300
25°C
200
−55°C
100
0
IC/IB = 10
150°C
25°C
0.1
−55°C
0.01
0.001
0.01
1
0.1
0.001
IC, COLLECTOR CURRENT (A)
I
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
−55°C
IC/IB = 10
25°C
0.9
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
1
0.0001
0.01
0.1
1
Figure 13. Temperature Coefficients
+1
TJ = 25°C
0.8
0.6
IC = 10 mA
100 mA 300 mA
500 mA
0.2
0.1
1
10
IB, BASE CURRENT (mA)
100
0V, TEMPERATURE COEFFICIENTS
(mV / °C)
VCE, COLLECTOR-EMITTER VOLTAGE
(VOLTS)
Figure 12. Saturation Region
VC for
VCE(sat)
0
-1
VB for
-2
1
VBE
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 15. Capacitances
Figure 14. Current Gain Bandwidth Product
vs. Collector Current
1000
100
VCE = 1 V
TA = 25°C
C, CAPACITANCE (pF)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
0.001
IC, COLLECTOR CURRENT (A)
1.0
0
0.01
1
1.2
IC, COLLECTOR CURRENT (A)
0.4
0.1
COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
1.1
1.0
0.01
C,
100
10
0.1
1
10
100
1000
Cib
10
Cob
1
0.1
IC, COLLECTOR CURRENT (mA)
10
1
VR, REVERSE VOLTAGE (VOLTS)
100
Page 3 of 4
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected]
X09BP01
2014.01.22
GENERAL PURPOSE TRANSISTORS
RoHS
BC817 (16, 25, 40) NPN
SOT-23
BC817-40 TYPICAL CHARACTERISTIC CURVES
Figure 16. DC Current Gain vs. Collector
Current
Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
1
700
150°C
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
VCE = 1 V
500
25°C
400
300
−55°C
200
100
IC/IB = 10
150°C
25°C
0.1
−55°C
0.01
0.001
0
0.001
0.01
0.001
1
0.1
0.01
IC, COLLECTOR CURRENT (A)
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
−55°C
IC/IB = 10
1.0
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
1
0.0001
IC, COLLECTOR CURRENT (A)
TJ = 25°C
0.8
0.6
300 mA
500 mA
0.2
0
0.01
1000
0.1
1
10
IB, BASE CURRENT (mA)
100
Figure 22. Current Gain Bandwidth Product
vs. Collector Current
10
10
100
VC for V
CE(sat)
0
-1
VB for V
BE
-2
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 23. Capacitances
100
1
1
100
VCE = 1 V
TA = 25°C
0.1
0.1
+1
1
C, CAPACITANCE (pF)
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
100 mA
0.01
Figure 21. Temperature Coefficients
0V, TEMPERATURE COEFFICIENTS
(mV / °C)
VCE, COLLECTOR-EMMITTER VOLTAGE
(VOLTS)
Figure 20. Saturation Region
IC = 10 mA
0.001
IC, COLLECTOR CURRENT (A)
1.0
0.4
1
Figure 19. Base Emitter voltage vs. Collector
Current
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
0.1
IC, COLLECTOR CURRENT (A)
1000
IC, COLLECTOR CURRENT (mA)
C ib
10
C ob
1
0.1
10
1
VR, REVERSE VOLTAGE (VOLTS)
100
Page 4 of 4
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail [email protected]
X09BP01
2014.01.22