L/ ^Ssmi-Conauatoi ZPwaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA NPN - MPSA05, MPSA06*; PNP - MPSA55, MPSA56* •Preferred Devices Amplifier Transistors Voltage and Current are Negative for PNP Transistors NPN COLLECTOR 3 PNP COLLECTOR MAXIMUM RATINGS Rating Symbol Collector -Emitter Voltage MPSA05, MPSA55 MPSA06, MPSA56 VCEO Collector -Base Voltage MPSA05, MPSA55 MPSA06, MPSA56 VCBO Emitter -Base Voltage VEBO 4.0 Vdc Collector Current - Continuous Ic 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 W mW/°C Total Device Dissipation @ Tc = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ. Tstg -55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient (Note 1) RSJA 200 °C/W Operating and Storage Junction Temperature Range Value Unit Vdc 60 80 EMITTER EMITTER Vdc 60 80 TO-92 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS °c/w Thermal Resistance, Junction-to-Case 83.3 ROJC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. ROJA is measured with the device soldered into a typical printed circuit board. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders. Oiinlifv S*»mi-f nnrln*-*nr< NPN - MPSA05, MPSA06*; PNP - MPSA55, MPSA56* ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Min Max 60 80 _ V(BR)EBO 4.0 - Vdc ICES ~ 0.1 nAdc _ 0.1 0.1 Symbol Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (Note 2) (l c = 1.0 mAdc, IB = 0) Vdc V(BR)CEO MPSA05, MPSA55 MPSA06, MPSA56 Emitter- Base Breakdown Voltage (IE = 100|iAdc, lc = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) nAdc ICBO MPSA05, MPSA55 MPSA06, MPSA56 ON CHARACTERISTICS DC Current Gain (l c = 10mAdc, VCE = 1-0 Vdc) (lc = 100 mAdc, VCE = 1.0 Vdc) hFE Collector- Emitter Saturation Voltage (l c = 100 mAdc, IB = 10 mAdc) Base-Emitter On Voltage (lc = 100 mAdc, VCE = 1 .0 Vdc) 100 100 _ VcE(sat) - 0.25 Vdc VBE(on) - 1.2 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 3) (lc = 10 mA, VCE = 2.0 V, f = 100 MHz) MHz ft 100 MPSA05 MPSA06 MPSA55 MPSA56 (lc = 1 00 mAdc, V CE = 1 -0 Vdc, f = 1 00 MHz) 50 2. Pulse Test: Pulse Width <; 300 us, Duty Cycle < 2%. 3. fj is defined as the frequen ;y at which |hfe| extrapolates to unity. TURN-ON TIME -1. D V > I *• 5.0 us •« TURN-OFF TIME VCC <j> < I 100 +40V > RL } Vin m. |^ \( • n 0 t - 3 ' 0ns +VBB 0 ^ 100 J o OUTPUT S RL " .^ / ^ K \ ^^ ( L ) _L VtV ^r* 5.0 ,iF i. I c s<6-opF < :10° ,. J _L Vcc <j> +40V V|n tf .?* /^PN ! * 'f >- > ^S.O^sf- ^3 f V V V 1 1 J 1 \hV/ ^'Cs <6.0pF 100 _|_ tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits 0 OUTPUT