Data Sheet μPA2814T1S P-channel MOSFET R07DS0776EJ0101 Rev.1.01 May 28, 2013 –30 V, –24 A, 7.8 mΩ Description The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 7.8 mΩ MAX. (VGS = −10 V, ID = −24 A) • 4.5 V Gate-drive available • Small & thin type surface mount package with heat spreader • Pb-free and Halogen free HWSON-8 Ordering Information Part No. μPA2814T1S-E2-AT ∗1 Note: Lead Plating Pure Sn Packing Package HWSON-8 typ. 0.022 g Tape 5000 p/reel ∗ 1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings −30 m20 m24 m96 1.5 3.8 20 150 −55 to +150 22 48.4 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 6.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗ 3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH R07DS0776EJ0101 Rev.1.01 May 28, 0213 Page 1 of 6 μPA2814T1S Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(off) | yfs | Drain to Source On-state Resistance ∗1 MIN. TYP. MAX. −1 m100 −2.5 6.2 9.6 2800 1300 1160 16 43 130 220 74 8.4 36 0.9 210 7.8 14.5 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Reverse Recovery Charge Qrr 370 −1.0 17 Unit μA nA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Test Conditions VDS = −30 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −5 V, ID = −12 A VGS = −10 V, ID = −24 A VGS = −4.5 V, ID = −12 A VDS = −10 V, VGS = 0 V, f = 1 MHz VDD = −15 V, ID = −12 A, VGS = −10 V, RG = 10 Ω VDD = −24 V, VGS = −10 V, ID = −24 A IF = 24 A, VGS = 0 V IF = 24 A, VGS = 0 V, di/dt = 100 A/μs Note: ∗1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL 50 Ω PG. VGS = −20 → 0 V VDD RG PG. VGS(−) VGS Wave Form 0 90% VGS 10% VDD VDS(−) − IAS BVDSS VDS ID VGS(−) 0 VDS Wave Form τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% VDS 90% 90% 10% 10% 0 td(on) tr td(off) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. PG. IG = −2 mA RL 50 Ω VDD R07DS0776EJ0101 Rev.1.01 May 28, 2013 Page 2 of 6 μPA2814T1S Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE FORWARD BIAS SAFE OPERATING AREA OPERATING AREA -1000 100 ms 120 10 ms PW = 200 μs ID(pulse) = –96 A -100 100 ID - Drain Current - A dT - Percentage of Rated Power - % 140 80 60 40 1 ms ID(DC) = –24 A -10 o S( -1 20 50 75 100 125 150 -0.01 -0.01 175 ) 0V –1 Single Pulse TA = 25ºC Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt 0 25 d ite L im Power Dissipation Limited -0.1 0 n) RD = S G (V TA – Ambient Temperature - °C -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A) = 83.3ºC/W 100 10 Rth(ch-C) = 6.3ºC/W 1 Rth(ch-A) : Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt Single pulse 0.1 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE -100 -100 VGS = –10 V TA = 150°C 75°C 25°C –55°C -10 ID - Drain Current - A ID - Drain Current - A -80 -60 -40 –4.5 V -20 -1 -0.1 -0.01 VDS = –10 V Pulsed Pulsed -0 -0 -0.2 -0.4 -0.6 -0.8 -1 VDS - Drain to Source Voltage - V R07DS0776EJ0101 Rev.1.01 May 28, 2013 -1.2 -0.001 -0 -1 -2 -3 -4 VGS - Gate to Source Voltage - V Page 3 of 6 Chapter Title GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. DRAIN CHANNEL TEMPERATURE CURRENT | yfs | - Forward Transfer Admittance - S -3 -2 -1 Pulsed VDS = –10 V ID = –1 mA -0 -50 0 50 100 150 1000 TA = 150°C 75°C 25°C –55°C 100 10 1 0.1 VDS = –5 V Pulsed 0.01 -0.01 -0.1 -1 -10 -100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 30 15 Pulsed VGS = –4.5 V 10 –10 V 5 0 -0.1 -1 -10 -100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) – Gate to Source Cut-off Voltage - V μPA2814T1S Pulsed 25 20 15 10 ID = –24 A 5 0 -0 -5 -10 -15 -20 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. 10000 16 Pulsed 14 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE VGS = –4.5 V ID = –12 A 12 10 8 6 VGS = –10 V ID = –24 A 4 2 Ciss Coss 1000 Crss V GS = 0 V f = 1 MHz 100 0 -50 0 50 100 Tch - Channel Temperature - °C R07DS0776EJ0101 Rev.1.01 May 28, 2013 150 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V Page 4 of 6 μPA2814T1S Chapter Title DYNAMIC INPUT/OUTPUT CHARACTERISTICS -12 VDD = –24 V –15 V –6 V -20 -10 -8 -6 -10 -4 -2 ID = –24 A -0 -0 0 20 40 60 QG - Gate Charge - nC R07DS0776EJ0101 Rev.1.01 May 28, 2013 80 1000 IF - Diode Forward Current - A VGS VDS VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V -30 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = –10 V 100 –4.5 V 10 0V 1 0.1 Pulsed 0.01 0 0.4 0.8 1.2 VF(S-D) - Source to Drain Voltage - V Page 5 of 6 μPA2814T1S Chapter Title Package Drawings (Unit: mm) HWSON-8 5 6 7 4 3 2 8 1 1,2,3 : Source 4 : Gate 5,6,7,8 : Drain RENESAS Package Code : PWSN0008JB-A Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. 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