RENESAS UPA2814T1S

Data Sheet
μPA2814T1S
P-channel MOSFET
R07DS0776EJ0101
Rev.1.01
May 28, 2013
–30 V, –24 A, 7.8 mΩ
Description
The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 7.8 mΩ MAX. (VGS = −10 V, ID = −24 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free
HWSON-8
Ordering Information
Part No.
μPA2814T1S-E2-AT ∗1
Note:
Lead Plating
Pure Sn
Packing
Package
HWSON-8
typ. 0.022 g
Tape 5000 p/reel
∗
1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m24
m96
1.5
3.8
20
150
−55 to +150
22
48.4
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
6.3
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗
3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0776EJ0101 Rev.1.01
May 28, 0213
Page 1 of 6
μPA2814T1S
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(off)
| yfs |
Drain to Source On-state
Resistance ∗1
MIN.
TYP.
MAX.
−1
m100
−2.5
6.2
9.6
2800
1300
1160
16
43
130
220
74
8.4
36
0.9
210
7.8
14.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Reverse Recovery Charge
Qrr
370
−1.0
17
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = −30 V, VGS = 0 V
VGS = m20 V, VDS = 0 V
VDS = −10 V, ID = −1 mA
VDS = −5 V, ID = −12 A
VGS = −10 V, ID = −24 A
VGS = −4.5 V, ID = −12 A
VDS = −10 V,
VGS = 0 V,
f = 1 MHz
VDD = −15 V, ID = −12 A,
VGS = −10 V,
RG = 10 Ω
VDD = −24 V,
VGS = −10 V,
ID = −24 A
IF = 24 A, VGS = 0 V
IF = 24 A, VGS = 0 V,
di/dt = 100 A/μs
Note: ∗1. Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
50 Ω
PG.
VGS = −20 → 0 V
VDD
RG
PG.
VGS(−)
VGS
Wave Form
0
90%
VGS
10%
VDD
VDS(−)
−
IAS
BVDSS
VDS
ID
VGS(−)
0
VDS
Wave Form
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
VDS
90%
90%
10% 10%
0
td(on)
tr td(off)
ton
tf
toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
IG = −2 mA
RL
50 Ω
VDD
R07DS0776EJ0101 Rev.1.01
May 28, 2013
Page 2 of 6
μPA2814T1S
Chapter Title
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
FORWARD BIAS SAFE OPERATING AREA
OPERATING AREA
-1000
100 ms
120
10 ms
PW = 200 μs
ID(pulse) = –96 A
-100
100
ID - Drain Current - A
dT - Percentage of Rated Power - %
140
80
60
40
1 ms
ID(DC) = –24 A
-10
o
S(
-1
20
50
75
100
125
150
-0.01
-0.01
175
)
0V
–1
Single Pulse
TA = 25ºC
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
0
25
d
ite
L im
Power Dissipation Limited
-0.1
0
n)
RD =
S
G
(V
TA – Ambient Temperature - °C
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 83.3ºC/W
100
10
Rth(ch-C) = 6.3ºC/W
1
Rth(ch-A) : Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
Single pulse
0.1
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
-100
-100
VGS = –10 V
TA = 150°C
75°C
25°C
–55°C
-10
ID - Drain Current - A
ID - Drain Current - A
-80
-60
-40
–4.5 V
-20
-1
-0.1
-0.01
VDS = –10 V
Pulsed
Pulsed
-0
-0
-0.2
-0.4
-0.6
-0.8
-1
VDS - Drain to Source Voltage - V
R07DS0776EJ0101 Rev.1.01
May 28, 2013
-1.2
-0.001
-0
-1
-2
-3
-4
VGS - Gate to Source Voltage - V
Page 3 of 6
Chapter Title
GATE TO SOURCE CUT-OFF VOLTAGE vs.
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CHANNEL TEMPERATURE
CURRENT
| yfs | - Forward Transfer Admittance - S
-3
-2
-1
Pulsed
VDS = –10 V
ID = –1 mA
-0
-50
0
50
100
150
1000
TA = 150°C
75°C
25°C
–55°C
100
10
1
0.1
VDS = –5 V
Pulsed
0.01
-0.01
-0.1
-1
-10
-100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE TO SOURCE VOLTAGE
30
15
Pulsed
VGS = –4.5 V
10
–10 V
5
0
-0.1
-1
-10
-100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(off) – Gate to Source Cut-off Voltage - V
μPA2814T1S
Pulsed
25
20
15
10
ID = –24 A
5
0
-0
-5
-10
-15
-20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
10000
16
Pulsed
14
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
CHANNEL TEMPERATURE
VGS = –4.5 V
ID = –12 A
12
10
8
6
VGS = –10 V
ID = –24 A
4
2
Ciss
Coss
1000
Crss
V GS = 0 V
f = 1 MHz
100
0
-50
0
50
100
Tch - Channel Temperature - °C
R07DS0776EJ0101 Rev.1.01
May 28, 2013
150
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
Page 4 of 6
μPA2814T1S
Chapter Title
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-12
VDD = –24 V
–15 V
–6 V
-20
-10
-8
-6
-10
-4
-2
ID = –24 A
-0
-0
0
20
40
60
QG - Gate Charge - nC
R07DS0776EJ0101 Rev.1.01
May 28, 2013
80
1000
IF - Diode Forward Current - A
VGS
VDS
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
-30
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VGS = –10 V
100
–4.5 V
10
0V
1
0.1
Pulsed
0.01
0
0.4
0.8
1.2
VF(S-D) - Source to Drain Voltage - V
Page 5 of 6
μPA2814T1S
Chapter Title
Package Drawings (Unit: mm)
HWSON-8
5
6
7
4
3
2
8
1
1,2,3 : Source
4
: Gate
5,6,7,8 : Drain
RENESAS Package Code : PWSN0008JB-A
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0776EJ0101 Rev.1.01
May 28, 2013
Page 6 of 6
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