Preliminary Data Sheet 2SK4146 R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 MOS FIELD EFFECT TRANSISTOR Description The 2SK4146 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 10.1 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP. (VDS = 10 V) Ordering Information Part No. 2SK4146-S19-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current ∗2 Repetitive Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 75 ±20 ±80 ±200 84 1.5 150 −55 to +150 33 109 Unit V V A A W W °C °C A mJ Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, VDD = 38 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Rth(ch-C) Rth(ch-A) 1.49 83.3 °C/W °C/W Page 1 of 6 2SK4146 Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(off) | yfs | Min Typ 2.0 15 RDS(on) 3.0 32 7.8 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 3500 620 160 26 20 85 17 61 16 20 1.0 58 125 Max 10 ±100 4.0 10.1 Unit μA nA V S mΩ Test Conditions VDS = 75 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A pF pF pF ns ns ns ns nC nC nC V ns nC VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 38 V, ID = 40 A, VGS = 10 V, RG = 0 Ω 1.5 VDD = 60 V, VGS = 10 V, ID = 80 A IF = 80 A, VGS = 0 V IF = 80 A, VGS = 0 V, di/dt = 100 A/μ s Note: ∗1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Page 2 of 6 2SK4146 Chapter Title Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA CASE TEMPERATURE 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 80 60 40 20 0 0 25 50 75 100 125 150 175 0 TC - Case Temperature - °C 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA d it e Lim V ) n) (o 0 i S 1 RD S = G ID(DC) (V 100 ID(pul s e) PW =1 i 1i m 00 μs s i 1i 0 m i 10 s w Po D er is 1 p si ID - Drain Current - A 1000 io at n d it e m Li TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3 °C/W 10 Rth(ch-C) = 1.49 °C/W 1 0.1 0.001 1m Single Pulse 0.01 10 m 0.1 m 100 11 10 10 100 100 1000 1000 PW - Pulse Width - s R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Page 3 of 6 2SK4146 Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS 250 1000 200 100 ID - Drain Current - A ID - Drain Current - A DRAIN TO SOURCE VOLTAGE 150 100 50 V GS = 10 V Pulsed 0 0 1 2 3 4 5 TA = -55°C 25°C 75°C 150°C 10 1 0.1 V DS = 10 V Pulsed 0.01 0 6 2 4 5 6 GATE TO SOURCE CUT-OFF VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN vs. CHANNEL TEMPERATURE CURRENT 100 | yfs | - Forward Transfer Admittance - S 4.0 3.5 3.0 2.5 2.0 1.5 1.0 V DS = 10 V ID = 1 mA Pulsed 0.5 0.0 -75 -25 25 75 125 175 TA = -55°C 25°C 75°C 150°C 10 V DS = 10 V Pulsed 1 0.1 1 10 100 ID - Drain Current - A Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 20 16 12 8 4 V GS = 10 V Pulsed 0 0 1 10 100 ID - Drain Current - A R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V 1 20 ID = 16 A 40 A 16 80 A 12 8 4 0 Pulsed 0 4 8 12 16 20 VGS - Gate to Source Voltage - V Page 4 of 6 2SK4146 Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 20 10000 ID = 40 A V GS = 10 V Pulsed 16 Ciss, Coss, Crss - Capacitance - pF 12 8 4 0 1000 Coss 100 Crss V GS = 0 V f = 1 MHz 10 -75 -25 25 75 125 0.1 175 10 100 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 td(off) 100 tf td(on) tr 10 V DD = 38 V V GS = 10 V RG = 0 Ω 1 0.1 1 10 VDS - Drain to Source Voltage - V 1000 V GS 15 V 40 8 4 20 ID = 80 A 0 100 0 10 20 30 40 50 60 0 70 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 0V V GS = 10 V 1 Pulsed 0.5 1.0 VF(S-D) - Source to Drain Voltage - V R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 1.5 trr - Reverse Recovery Time - ns 1000 100 0.1 0.0 12 38 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 V DD = 60 V V DS 60 ID - Drain Current - A IF - Diode Forward Current - A 1 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss 100 10 di/dt = 100 A/μs V GS = 0 V 1 0.1 1 10 100 IF - Diode Forward Current - A Page 5 of 6 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE 2SK4146 Chapter Title Package Drawings (Unit: mm) 4.8 MAX. 10.2 MAX. 3.6±0.2 1.3±0.2 1 2 3 3.0 TYP. 1.52±0.2 0.8±0.1 12.7 MIN. 4 15.9 MAX. 8.7 TYP. 6.3 MIN. 2.8±0.3 TO-220 (Mass: 1.9 g TYP.) 0.5±0.2 2.4±0.2 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0130EJ0100 Rev.1.00 Sep 24, 2010 Page 6 of 6 Revision History 2SK4146 Rev. Date Page 1.00 Sep 24, 2010 − Description Summary First Edition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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