Data Sheet N0439N N-channel MOSFET R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 40 V, 90 A, 3.3 mΩ Description This product is N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A ) • Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V ) TO-220 Ordering Information Part No. N0439N-S19-AY*1 LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Package TO-220 1.9g TYP. Note: *1. Pb-free ( This product does not contain Pb in the external electrode. ) Absolute Maximum Ratings (TA = 25°C) Item Symbol Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25 °C) ID(DC) Drain Current (pulse) *1 ID(pulse) Total Power Dissipation (TC = 25 °C) PT1 Total Power Dissipation (TA = 25 °C) PT2 Channel Temperature Tch Storage Temperature Tstg Repetitive Avalanche Current *2 IAR *2 Repetitive Avalanche Energy EAR Notes: ∗1. TC=25℃、Pw ≤ 10 μs, Duty Cycle ≤ 1% Ratings 40 ± 20 ± 90 ± 360 147 1.8 175 -55 to 175 37 136 Unit V V A A W W °C °C A mJ ∗ 2. RG = 25Ω, VGS = 20 Æ 0V Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 Rth(ch-C) Rth(ch-A) 1.02 83.3 °C/W °C/W Page 1 of 6 N0439N Electrical Characteristics (TA = 25°C) Item Symbol Zero Gate Voltage Drain Current Min. Typ. Max. Unit 1 μA VDS = 40V, VGS = 0 V IDSS Test Conditions ±100 nA VGS = ± 20 V, VDS = 0 V 3.0 4.0 V VDS = VGS, ID = 250 μA S VDS = 5 V, ID = 45 A RDS(on) 2.75 3.30 mΩ VGS = 10 V, ID = 45 A Input Capacitance Ciss 3900 5850 pF VDS = 25 V Output Capacitance Coss 530 800 pF VGS = 0 V Reverse Transfer Capacitance Crss 200 360 pF f = 1 MHz Turn-on Delay Time td(on) 25 60 ns VDD = 20V, ID = 45 A Gate Leakage Current IGSS Gate to Source Threshold Voltage Forward Transfer Admittance *1 Drain to Source On-state Resistance *1 VGS(th) 2.0 | yfs | 30 Rise Time Turn-off Delay Time Fall Time tr 12 30 ns VGS = 10 V td(off) 65 130 ns RG = 0 Ω tf 8 20 ns Total Gate Charge QG 68 102 nC VDD = 32V Gate to Source Charge QGS 18 nC VGS = 10 V QGD 18 nC ID = 90 A Gate to Drain Charge Body Diode Forward Voltage *1 VF(S-D) 0.95 V IF = 90 A, VGS = 0 V Reverse Recovery Time trr 47 1.5 ns IF = 90 A, VGS = 0 V Reverse Recovery Charge Qrr 68 nC di/dt = 100 A/μs Note: *1. Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS 0 10% 10% tr td(off) Wave Form τ VDD Starting Tch 90% VDS VGS 0 BVDSS τ = 1 μs Duty Cycle ≤ 1% td(on) ton tf toff TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 RL VDD Page 2 of 6 N0439N TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 160 100 Pt – Total Power Dissipation - W dT - Percentage of Rated Power - % 120 80 60 40 20 140 120 100 80 60 40 20 0 0 0 25 50 75 100 125 150 0 175 FORWARD BIAS SAFE OPERATING AREA 75 100 125 150 175 DRAIN CURRENT(DC) vs. CASE TEMPERATURE 1000 100 ID(Pulse)=360A PW 100 =1 0 0u 80 s ID(DC) - Drain Current(DC) – A RDS(ON)Limted (VGS=10V) ID(DC)=90A PW ms =1 Power Dissipation Limited PW 0 =1 ms Secondary Breakdown Limited DC ID - Drain Current - A 50 TC - Case Temperature - °C TC - Case Temperature - °C 10 25 1 TC =25℃ Single Pulse 60 40 20 0 0.1 0.1 1 10 0 100 25 50 75 100 125 150 175 TC - Case Temperature - °C VDS - Drain to Source Voltage – V Rth(t) - Transient Thermal Resistance - °C/W TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 R th(ch-A)=83.3℃/W 100 10 R th(ch-C)=1.02℃/W 1 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 Page 3 of 6 N0439N DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 400 100 350 10 250 ID - Drain Current - A ID - Drain Current - A 300 200 150 100 VGS=10V Pulsed 50 0 TA=-55℃ 25℃ 85℃ 1 150℃ 175℃ 0.1 0.01 VDS = 10V Pulsed 0.001 0 0.2 0.4 0.6 0.8 1 1.2 0 VDS - Drain to Source Voltage - V 3 4 5 GATE TO SOURCE THRESHOLD VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs. CHANNEL TEMPERATURE DRAIN CURRENT 6 100 | yfs | - Forward Transfer Admittance - S VGS(th) – Gate to Source Threshold Voltage - V 2 VGS - Gate to Source Voltage - V 4 3 2 1 VDS = VGS I D=250μA 0 -100 -50 0 50 100 150 TA=-55℃ 25℃ 85℃ 150℃ 175℃ 10 VDS=5V Pulsed 1 0.1 200 Tch - Channel Temperature - °C 4 3 2 1 VGS=10V Pulsed 0 R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ 5 ID - Drain Current - A 100 GATE TO SOURCE VOLTAGE 6 10 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. RDS(on) - Drain to Source On-state Resistance - mΩ 1 6 5 4 3 2 1 I D=45A Pulsed 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 N0439N DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 6 3 2 VGS=10V I D=45A Pulsed 0 -100 0 100 1000 Coss VGS=0V f =1MHz 100 0.1 200 1 10 100 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 35 100 VDS - Drain to Source Voltage - V 1000 td(on),tr,td(off),tr – Switching Time - ns Crss t d(off) t d(on) tr 10 tf VDD=20V VGS=10V R G =0Ω 1 14 30 25 1 10 10 20 8 15 6 10 4 VGS VDS 5 2 I D=90A 0 0 0 0.1 12 VDD=32V 20V 8V VGS - Gate to Source Voltage - V 1 S 4 Ciss f 5 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE 10 20 30 40 50 60 70 100 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 100 100 trr – Reverse Recovery Time - ns IF - Diode Forward Current - A VGS=10V VGS=0V 10 1 Pulsed 10 di/dt=100A/uｓ V GS=0V 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 1.4 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 N0439N Package Drawings (Unit: mm) 4.8 MAX. 10.2 MAX. 3.6±0.2 1.3±0.2 1.52±0.2 0.8±0.1 12.7 MIN. 3.0 TYP. 4 15.9 MAX. 8.7 TYP. 6.3 MIN. 2.8±0.3 TO-220 0.5±0.2 2.54 TYP. 2.4±0.2 2.54 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 RENESAS Package code : PRSS0004AP-A Equivalent Circuit / Pin Assignment 2 , 4 : Drain 4 Body Diode 1 : Gate 3 : Source 1 2 3 Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1065EJ0100 Rev.1.00 Jun 13, 2013 Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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