Preliminary Data Sheet 2SK2157C N-CHANNEL MOSFET FOR SWITCHING R07DS1264EJ0200 Rev.2.00 Jun 18, 2015 Description The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 65 m MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 91 m MAX. (VGS = 2.5 V, ID = 2.0 A) Ordering Information Part Number Lead Plating Packing Package 2SK2157C-T1-AZ/AY -AZ : Sn-Bi , -AY : Pure Sn 1000p/Reel SC-84 (MP-2) Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts. Marking XR1 Absolute Maximum Ratings (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS 12 V Drain Current (DC) ID(DC) 3.5 A Drain Current (pulse) Note1 ID(pulse) 14 A Total Power Dissipation Note2 PT 2.0 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to 150 C Note1 PW 10 s, Duty Cycle 1% Note2 16 cm2 X 0.7mm, ceramic substrate used R07DS1264EJ0200 Rev.2.00 Jun 18, 2015 Page 1 of 6 2SK2157C Electrical Characteristics (TA = 25C) Characteristics Symbol Test Conditions MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 A Gate Leakage Current IGSS VGS = 12 V, VDS = 0 V 10 A 1.5 V Gate to Source Cut-off Voltage Forward Transfer Admittance VGS(off) VDS = 10V, ID = 1 mA 0.5 1.0 | yfs | VDS = 10 V, ID = 2.0 A 1.0 4.9 RDS(on)1 VGS = 4.5 V, ID = 2.0 A 50 63 m RDS(on)2 VGS = 4.0 V, ID = 2.0 A 52 65 m RDS(on)3 91 m Note Drain to Source On-state Resistance Note S VGS = 2.5 V, ID = 2.0 A 68 Input Capacitance Ciss VDS = 10 V, 260 pF Output Capacitance Coss VGS = 0 V, 60 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 35 pF Turn-on Delay Time td(on) VDD = 10 V, 28 ns ID = 2 A, 65 ns td(off) VGS = 4 V, 98 ns tf RG = 10 80 ns ID = 3.5 A, VDD = 24 V, VGS = 4 V 4 nC 0.89 V Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge Body Diode Forward Voltage QG Note VF(S-D) IF = 3.5 A, VGS = 0 V Note Pulsed Test Circuit Switching Time D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% 90% VDS 90% VGS 0 90% VDS VDS τ τ = 1 μs Duty Cycle ≤ 1% R07DS1264EJ0200 Rev.2.00 Jun 18, 2015 0 10% 10% tr td(off) Wave Form td(on) ton tf toff Page 2 of 6 2SK2157C Typical Characteristics (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 100 ID(pulse)= 12A 10 80 ID-Drain Current-A dT - Percentage of Rated Power - % 120 60 40 20 10ms 100ms 1 DC Power Dissipation Limited 0.1 0 0 25 50 75 100 125 150 TA=25°C Single Pulse 175 0.01 0.1 TA – Ambient Temperature - C 1 10 100 VDS-Drain to Source Voltage-V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A ID - Drain Current - A 1ms ID(DC)=3.5A VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - C R07DS1264EJ0200 Rev.2.00 Jun 18, 2015 ID - Drain Current - A Page 3 of 6 2SK2157C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS – Gate to Source Voltage - V Tch - Channel Temperature - C VDS - Drain to Source Voltage – V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS VGS – Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 td(off) 100 tf tr td(on) 10 VDD= 10V VGS= –4V RG= 10Ω 1 0.1 1 ID - Drain Current - A R07DS1264EJ0200 Rev.2.00 Jun 18, 2015 10 QG – Gate Chage - nC Page 4 of 6 2SK2157C IF – Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE VF(S-D) – Source to Drain Voltage - V R07DS1264EJ0200 Rev.2.00 Jun 18, 2015 Page 5 of 6 2SK2157C Package Drawings (Unit: mm) SC-84 (MP-2) Equivalent Circuit Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. R07DS1264EJ0200 Rev.2.00 Jun 18, 2015 Page 6 of 6 2SK2157C Description Rev. Date 1.00 2.00 Sep , 2013 Jun , 2015 Page 3 4 Summary First Edition Issued Added FORWARD BIAS SAFE OPERATING AREA Changed SWITCHING CHARACTERISTICS All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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